| Patent Number |
Title Of Patent |
Date Issued |
| 5926705 |
Method for manufacturing a semiconductor device with stabilization of a bipolar transistor and a schottky barrier diode |
Jul. 20, 1999 |
| 5716880 |
Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation |
Feb. 10, 1998 |
| 5610097 |
Method for forming electrode on semiconductor |
Mar. 11, 1997 |
| 5563081 |
Method for making a nonvolatile memory device utilizing a field effect transistor having a ferroelectric gate film |
Oct. 8, 1996 |
| 5478764 |
Method of producing semiconductor device including Schottky barrier diode incorporating a CVD refractory metal layer |
Dec. 26, 1995 |
| 5418185 |
Method of making schottky diode with guard ring |
May. 23, 1995 |
| 5403760 |
Method of making a HgCdTe thin film transistor |
Apr. 4, 1995 |
| 5393698 |
Method for fabricating semiconductor devices |
Feb. 28, 1995 |
| 5358885 |
Method of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitance |
Oct. 25, 1994 |
| 5268316 |
Fabrication process for Schottky diode with localized diode well |
Dec. 7, 1993 |
| 5229323 |
Method for manufacturing a semiconductor device with Schottky electrodes |
Jul. 20, 1993 |
| 5225359 |
Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors |
Jul. 6, 1993 |
| 5143857 |
Method of fabricating an electronic device with reduced susceptiblity to backgating effects |
Sep. 1, 1992 |
| 5112774 |
Method of fabricating a high-voltage semiconductor device having a rectifying barrier |
May. 12, 1992 |
| 5098858 |
Junction between metal and zincblende-type III-V compound semiconductor and manufacturing method thereof |
Mar. 24, 1992 |
| 5045497 |
Method of making a schottky electrode |
Sep. 3, 1991 |
| 5019530 |
Method of making metal-insulator-metal junction structures with adjustable barrier heights |
May. 28, 1991 |
| 4997788 |
Display device including lateral Schottky diodes |
Mar. 5, 1991 |
| 4946803 |
Method for manufacturing a Schottky-type rectifier having controllable barrier height |
Aug. 7, 1990 |
| 4914042 |
Forming a transition metal silicide radiation detector and source |
Apr. 3, 1990 |
| 4908325 |
Method of making heterojunction transistors with wide band-gap stop etch layer |
Mar. 13, 1990 |
| 4889827 |
Method for the manufacture of a MESFET comprising self aligned gate |
Dec. 26, 1989 |
| 4833042 |
Nonalloyed ohmic contacts for n type gallium arsenide |
May. 23, 1989 |
| 4810637 |
Non-linear control element for a flat electrooptical display screen and a method of fabrication of said control element |
Mar. 7, 1989 |
| 4774206 |
Method for the manufacture of a self-aligned metal contact |
Sep. 27, 1988 |
| 4769338 |
Thin film field effect transistor and method of making same |
Sep. 6, 1988 |
| 4753899 |
Process for the fabrication of a Schottky gate field-effect transistor having a submicron effective channel length |
Jun. 28, 1988 |
| 4745082 |
Method of making a self-aligned MESFET using a substitutional gate with side walls |
May. 17, 1988 |
| 4694564 |
Method for the manufacture of a Schottky gate field effect transistor |
Sep. 22, 1987 |
| 4692991 |
Method of controlling forward voltage across Schottky diode |
Sep. 15, 1987 |
| 4644381 |
I.sup.2 L heterostructure bipolar transistors and method of making the same |
Feb. 17, 1987 |
| 4638551 |
Schottky barrier device and method of manufacture |
Jan. 27, 1987 |
| 4622735 |
Method for manufacturing a semiconductor device utilizing self-aligned silicide regions |
Nov. 18, 1986 |
| 4622736 |
Schottky barrier diodes |
Nov. 18, 1986 |
| 4545109 |
Method of making a gallium arsenide field effect transistor |
Oct. 8, 1985 |
| 4326330 |
Process for producing a self-aligned grid field-effect transistor |
Apr. 27, 1982 |
| 4316201 |
Low-barrier-height epitaxial Ge-GaAs mixer diode |
Feb. 16, 1982 |
| 4313971 |
Method of fabricating a Schottky barrier contact |
Feb. 2, 1982 |
| 4310362 |
Method of making Schottky diode with an improved voltage behavior |
Jan. 12, 1982 |
| 4266333 |
Method of making a Schottky barrier field effect transistor |
May. 12, 1981 |
| 4260906 |
Semiconductor device and logic circuit constituted by the semiconductor device |
Apr. 7, 1981 |
| 4260431 |
Method of making Schottky barrier diode by ion implantation and impurity diffusion |
Apr. 7, 1981 |
| 4254428 |
Self-aligned Schottky diode structure and method of fabrication |
Mar. 3, 1981 |
| 4253105 |
Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device |
Feb. 24, 1981 |
| 4243435 |
Bipolar transistor fabrication process with an ion implanted emitter |
Jan. 6, 1981 |
| 4222164 |
Method of fabrication of self-aligned metal-semiconductor field effect transistors |
Sep. 16, 1980 |
| 4223327 |
Nickel-palladium Schottky junction in a cavity |
Sep. 16, 1980 |
| 4214256 |
Tantalum semiconductor contacts and method for fabricating same |
Jul. 22, 1980 |
| 4206540 |
Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
Jun. 10, 1980 |
| 4201999 |
Low barrier Schottky diodes |
May. 6, 1980 |
