| Patent Number |
Title Of Patent |
Date Issued |
| RE38674 |
Process for forming a thin oxide layer |
Dec. 21, 2004 |
| 6669787 |
Method of manufacturing a spin valve structure |
Dec. 30, 2003 |
| 6307225 |
Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device |
Oct. 23, 2001 |
| 6168967 |
Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms |
Jan. 2, 2001 |
| 6165287 |
Ferromagnetic tunnel-junction magnetic sensor |
Dec. 26, 2000 |
| 5696023 |
Method for making aluminum gallium arsenide semiconductor device with native oxide layer |
Dec. 9, 1997 |
| 5674788 |
Method of forming high pressure silicon oxynitride gate dielectrics |
Oct. 7, 1997 |
| 5645943 |
Electrified object contact component |
Jul. 8, 1997 |
| 5646074 |
Method of forming gate oxide for field effect transistor |
Jul. 8, 1997 |
| 5643817 |
Method for manufacturing a flat-panel display |
Jul. 1, 1997 |
| 5597768 |
Method of forming a Ga.sub.2 O.sub.3 dielectric layer |
Jan. 28, 1997 |
| 5593921 |
Method of forming vias |
Jan. 14, 1997 |
| 5523240 |
Method of manufacturing a thin film transistor with a halogen doped blocking layer |
Jun. 4, 1996 |
| 5521126 |
Method of fabricating semiconductor devices |
May. 28, 1996 |
| 5488015 |
Method of making an interconnect structure with an integrated low density dielectric |
Jan. 30, 1996 |
| 5459108 |
Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone |
Oct. 17, 1995 |
| 5422306 |
Method of forming semiconductor hetero interfaces |
Jun. 6, 1995 |
| 5413967 |
Method of manufacturing semiconductor devices |
May. 9, 1995 |
| 5397719 |
Method for manufacturing a display panel |
Mar. 14, 1995 |
| 5393352 |
Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer |
Feb. 28, 1995 |
| 5382550 |
Method of depositing SiO.sub.2 on a semiconductor substrate |
Jan. 17, 1995 |
| 5376591 |
Method for manufacturing semiconductor device |
Dec. 27, 1994 |
| 5344797 |
Method of forming interlevel dielectric for integrated circuits |
Sep. 6, 1994 |
| 5334544 |
Method of making thin film transistors |
Aug. 2, 1994 |
| 5334552 |
Method for fabricating a semiconductor device having a multi-layered interconnection structure |
Aug. 2, 1994 |
| 5330920 |
Method of controlling gate oxide thickness in the fabrication of semiconductor devices |
Jul. 19, 1994 |
| 5330935 |
Low temperature plasma oxidation process |
Jul. 19, 1994 |
| 5328867 |
Peroxide clean before buried contact polysilicon deposition |
Jul. 12, 1994 |
| 5306672 |
Method of manufacturing a semiconductor device wherein natural oxide film is removed from the surface of silicon substrate with HF gas |
Apr. 26, 1994 |
| 5290736 |
Method of forming interlayer-insulating film using ozone and organic silanes at a pressure above atmospheric |
Mar. 1, 1994 |
| 5282903 |
High quality oxide films on substrates |
Feb. 1, 1994 |
| 5281557 |
Soluble oxides for integrated circuit fabrication formed by the incomplete dissociation of the precursor gas |
Jan. 25, 1994 |
| 5264394 |
Method for producing high quality oxide films on substrates |
Nov. 23, 1993 |
| 5262358 |
Method for producing a silicate layer in an integrated circuit |
Nov. 16, 1993 |
| 5246887 |
Dielectric deposition |
Sep. 21, 1993 |
| 5244843 |
Process for forming a thin oxide layer |
Sep. 14, 1993 |
| 5238849 |
Method of fabricating semiconductor device |
Aug. 24, 1993 |
| 5219797 |
Method of treating a gallium arsenide surface and gallium arsenide surface so treated |
Jun. 15, 1993 |
| 5219774 |
Deposited tunneling oxide |
Jun. 15, 1993 |
| 5214003 |
Process for producing a uniform oxide layer on a compound semiconductor substrate |
May. 25, 1993 |
| 5212119 |
Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device |
May. 18, 1993 |
| 5212118 |
Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates |
May. 18, 1993 |
| 5208189 |
Process for plugging defects in a dielectric layer of a semiconductor device |
May. 4, 1993 |
| 5194405 |
Method of manufacturing a semiconductor device having a silicide layer |
Mar. 16, 1993 |
| 5183775 |
Method for forming capacitor in trench of semiconductor wafer by implantation of trench surfaces with oxygen |
Feb. 2, 1993 |
| 5182235 |
Manufacturing method for a semiconductor device having a bias sputtered insulating film |
Jan. 26, 1993 |
| 5182221 |
Method of filling a recess flat with a material by a bias ECR-CVD process |
Jan. 26, 1993 |
| 5180692 |
Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride |
Jan. 19, 1993 |
| 5166101 |
Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer |
Nov. 24, 1992 |
| 5132244 |
Growth-modified thermal oxidation for thin oxides |
Jul. 21, 1992 |
