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Class Information
Number: 148/DIG.118
Name: Metal treatment > Oxide films

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
RE38674 Process for forming a thin oxide layer Dec. 21, 2004
6669787 Method of manufacturing a spin valve structure Dec. 30, 2003
6307225 Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device Oct. 23, 2001
6168967 Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms Jan. 2, 2001
6165287 Ferromagnetic tunnel-junction magnetic sensor Dec. 26, 2000
5696023 Method for making aluminum gallium arsenide semiconductor device with native oxide layer Dec. 9, 1997
5674788 Method of forming high pressure silicon oxynitride gate dielectrics Oct. 7, 1997
5645943 Electrified object contact component Jul. 8, 1997
5646074 Method of forming gate oxide for field effect transistor Jul. 8, 1997
5643817 Method for manufacturing a flat-panel display Jul. 1, 1997
5597768 Method of forming a Ga.sub.2 O.sub.3 dielectric layer Jan. 28, 1997
5593921 Method of forming vias Jan. 14, 1997
5523240 Method of manufacturing a thin film transistor with a halogen doped blocking layer Jun. 4, 1996
5521126 Method of fabricating semiconductor devices May. 28, 1996
5488015 Method of making an interconnect structure with an integrated low density dielectric Jan. 30, 1996
5459108 Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone Oct. 17, 1995
5422306 Method of forming semiconductor hetero interfaces Jun. 6, 1995
5413967 Method of manufacturing semiconductor devices May. 9, 1995
5397719 Method for manufacturing a display panel Mar. 14, 1995
5393352 Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer Feb. 28, 1995
5382550 Method of depositing SiO.sub.2 on a semiconductor substrate Jan. 17, 1995
5376591 Method for manufacturing semiconductor device Dec. 27, 1994
5344797 Method of forming interlevel dielectric for integrated circuits Sep. 6, 1994
5334544 Method of making thin film transistors Aug. 2, 1994
5334552 Method for fabricating a semiconductor device having a multi-layered interconnection structure Aug. 2, 1994
5330920 Method of controlling gate oxide thickness in the fabrication of semiconductor devices Jul. 19, 1994
5330935 Low temperature plasma oxidation process Jul. 19, 1994
5328867 Peroxide clean before buried contact polysilicon deposition Jul. 12, 1994
5306672 Method of manufacturing a semiconductor device wherein natural oxide film is removed from the surface of silicon substrate with HF gas Apr. 26, 1994
5290736 Method of forming interlayer-insulating film using ozone and organic silanes at a pressure above atmospheric Mar. 1, 1994
5282903 High quality oxide films on substrates Feb. 1, 1994
5281557 Soluble oxides for integrated circuit fabrication formed by the incomplete dissociation of the precursor gas Jan. 25, 1994
5264394 Method for producing high quality oxide films on substrates Nov. 23, 1993
5262358 Method for producing a silicate layer in an integrated circuit Nov. 16, 1993
5246887 Dielectric deposition Sep. 21, 1993
5244843 Process for forming a thin oxide layer Sep. 14, 1993
5238849 Method of fabricating semiconductor device Aug. 24, 1993
5219797 Method of treating a gallium arsenide surface and gallium arsenide surface so treated Jun. 15, 1993
5219774 Deposited tunneling oxide Jun. 15, 1993
5214003 Process for producing a uniform oxide layer on a compound semiconductor substrate May. 25, 1993
5212119 Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device May. 18, 1993
5212118 Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates May. 18, 1993
5208189 Process for plugging defects in a dielectric layer of a semiconductor device May. 4, 1993
5194405 Method of manufacturing a semiconductor device having a silicide layer Mar. 16, 1993
5183775 Method for forming capacitor in trench of semiconductor wafer by implantation of trench surfaces with oxygen Feb. 2, 1993
5182235 Manufacturing method for a semiconductor device having a bias sputtered insulating film Jan. 26, 1993
5182221 Method of filling a recess flat with a material by a bias ECR-CVD process Jan. 26, 1993
5180692 Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride Jan. 19, 1993
5166101 Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer Nov. 24, 1992
5132244 Growth-modified thermal oxidation for thin oxides Jul. 21, 1992

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