| Patent Number |
Title Of Patent |
Date Issued |
| 6946339 |
Method for creating a stepped structure on a substrate |
Sep. 20, 2005 |
| 6162305 |
Method of making spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers |
Dec. 19, 2000 |
| 6096613 |
Method for poly-buffered locos without pitting formation |
Aug. 1, 2000 |
| 5981326 |
Damascene isolation of CMOS transistors |
Nov. 9, 1999 |
| 5861347 |
Method for forming a high voltage gate dielectric for use in integrated circuit |
Jan. 19, 1999 |
| 5696023 |
Method for making aluminum gallium arsenide semiconductor device with native oxide layer |
Dec. 9, 1997 |
| 5646074 |
Method of forming gate oxide for field effect transistor |
Jul. 8, 1997 |
| 5643813 |
Packing density for flash memories by using a pad oxide |
Jul. 1, 1997 |
| 5587327 |
Process for preparing a heterojunction bipolar transistor |
Dec. 24, 1996 |
| 5576226 |
Method of fabricating memory device using a halogen implant |
Nov. 19, 1996 |
| 5554545 |
Method of forming neuron mosfet with different interpolysilicon oxide thickness |
Sep. 10, 1996 |
| 5521107 |
Method for forming a field-effect transistor including anodic oxidation of the gate |
May. 28, 1996 |
| 5496762 |
Highly resistive structures for integrated circuits and method of manufacturing the same |
Mar. 5, 1996 |
| 5427971 |
Method for fabrication of semiconductor elements |
Jun. 27, 1995 |
| 5422293 |
Method for manufacturing a TFT panel |
Jun. 6, 1995 |
| 5362670 |
Semiconductor device producing method requiring only two masks for completion of element isolation regions and P- and N-wells |
Nov. 8, 1994 |
| 5358893 |
Isolation method for semiconductor device |
Oct. 25, 1994 |
| 5352626 |
Method for making a semiconductor device having an isolated layer region on the side wall of a groove |
Oct. 4, 1994 |
| 5352618 |
Method for forming thin tunneling windows in EEPROMs |
Oct. 4, 1994 |
| 5342798 |
Method for selective salicidation of source/drain regions of a transistor |
Aug. 30, 1994 |
| 5336638 |
Process for manufacturing semiconductor devices |
Aug. 9, 1994 |
| 5326712 |
Method for manufacturing a thin film transistor |
Jul. 5, 1994 |
| 5304510 |
Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited |
Apr. 19, 1994 |
| 5298443 |
Process for forming a MOSFET |
Mar. 29, 1994 |
| 5266523 |
Method of forming self-aligned contacts using the local oxidation of silicon |
Nov. 30, 1993 |
| 5254494 |
Method of manufacturing a semiconductor device having field oxide regions formed through oxidation |
Oct. 19, 1993 |
| 5254489 |
Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation |
Oct. 19, 1993 |
| 5240875 |
Selective oxidation of silicon trench sidewall |
Aug. 31, 1993 |
| 5236862 |
Method of forming oxide isolation |
Aug. 17, 1993 |
| 5229317 |
Method for preventing out-diffusion of phosphorous and boron in a BPSG-buried trench |
Jul. 20, 1993 |
| 5217920 |
Method of forming substrate contact trenches and isolation trenches using anodization for isolation |
Jun. 8, 1993 |
| 5215934 |
Process for reducing program disturbance in EEPROM arrays |
Jun. 1, 1993 |
| 5210549 |
Ink jet recording head having resistor formed by oxidization |
May. 11, 1993 |
| 5196367 |
Modified field isolation process with no channel-stop implant encroachment |
Mar. 23, 1993 |
| 5192707 |
Method of forming isolated regions of oxide |
Mar. 9, 1993 |
| 5175123 |
High-pressure polysilicon encapsulated localized oxidation of silicon |
Dec. 29, 1992 |
| 5132241 |
Method of manufacturing minimum counterdoping in twin well process |
Jul. 21, 1992 |
| 5106767 |
Process for fabricating low capacitance bipolar junction transistor |
Apr. 21, 1992 |
| 5082793 |
Method for making solid state device utilizing ion implantation techniques |
Jan. 21, 1992 |
| 5057451 |
Method of forming an antifuse element with substantially reduced capacitance using the LOCOS technique |
Oct. 15, 1991 |
| 5049520 |
Method of partially eliminating the bird's beak effect without adding any process steps |
Sep. 17, 1991 |
| 5039625 |
Maximum areal density recessed oxide isolation (MADROX) process |
Aug. 13, 1991 |
| 5035957 |
Coated metal product and precursor for forming same |
Jul. 30, 1991 |
| 5019526 |
Method of manufacturing a semiconductor device having a plurality of elements |
May. 28, 1991 |
| 5008207 |
Method of fabricating a narrow base transistor |
Apr. 16, 1991 |
| 4999155 |
Method for forming porous oxide dispersion strengthened carbonate fuel cell anodes with improved anode creep resistance |
Mar. 12, 1991 |
| 4968640 |
Isolation structures for integrated circuits |
Nov. 6, 1990 |
| 4946800 |
Method for making solid-state device utilizing isolation grooves |
Aug. 7, 1990 |
| 4923827 |
T-type undercut electrical contact process on a semiconductor substrate |
May. 8, 1990 |
| 4910165 |
Method for forming epitaxial silicon on insulator structures using oxidized porous silicon |
Mar. 20, 1990 |
