| Patent Number |
Title Of Patent |
Date Issued |
| 6137156 |
Semiconductor device employing silicon nitride layers with varied hydrogen concentration |
Oct. 24, 2000 |
| 5773325 |
Method of making a variable concentration SiON gate insulating film |
Jun. 30, 1998 |
| 5714408 |
Method of forming silicon nitride with varied hydrogen concentration |
Feb. 3, 1998 |
| 5650344 |
Method of making non-uniformly nitrided gate oxide |
Jul. 22, 1997 |
| 5460992 |
Fabricating non-volatile memory device having a multi-layered gate electrode |
Oct. 24, 1995 |
| 5434097 |
Method for manufacturing an image sensor |
Jul. 18, 1995 |
| 5422291 |
Method of making an EPROM cell with a readily scalable interpoly dielectric |
Jun. 6, 1995 |
| 5362661 |
Method for fabricating thin film transistor |
Nov. 8, 1994 |
| 5358879 |
Method of making gate overlapped lightly doped drain for buried channel devices |
Oct. 25, 1994 |
| 5352619 |
Method for improving erase characteristics and coupling ratios of buried bit line flash EPROM devices |
Oct. 4, 1994 |
| 5260236 |
UV transparent oxynitride deposition in single wafer PECVD system |
Nov. 9, 1993 |
| 5254506 |
Method for the production of silicon oxynitride film where the nitrogen concentration at the wafer-oxynitride interface is 8 atomic precent or less |
Oct. 19, 1993 |
| 5242848 |
Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device |
Sep. 7, 1993 |
| 5238863 |
Process for fabricating gate insulating structure of a charge coupled device |
Aug. 24, 1993 |
| 5234869 |
Method of manufacturing silicon nitride film |
Aug. 10, 1993 |
| 5198392 |
Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) film |
Mar. 30, 1993 |
| 5077230 |
Method for improving erase characteristics of buried bit line flash EPROM devices by use of a thin nitride layer formed during field oxide growth |
Dec. 31, 1991 |
| 5075245 |
Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps |
Dec. 24, 1991 |
| 5013692 |
Process for preparing a silicon nitride insulating film for semiconductor memory device |
May. 7, 1991 |
| 4980307 |
Process for producing a semiconductor device having a silicon oxynitride insulative film |
Dec. 25, 1990 |
| 4962065 |
Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices |
Oct. 9, 1990 |
| 4954867 |
Semiconductor device with silicon oxynitride over refractory metal gate electrode in LDD structure |
Sep. 4, 1990 |
| 4897368 |
Method of fabricating a polycidegate employing nitrogen/oxygen implantation |
Jan. 30, 1990 |
| 4894352 |
Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride |
Jan. 16, 1990 |
| 4866003 |
Plasma vapor deposition of an improved passivation film using electron cyclotron resonance |
Sep. 12, 1989 |
| 4855258 |
Native oxide reduction for sealing nitride deposition |
Aug. 8, 1989 |
| 4808552 |
Process for making vertically-oriented interconnections for VLSI devices |
Feb. 28, 1989 |
| 4786612 |
Plasma enhanced chemical vapor deposited vertical silicon nitride resistor |
Nov. 22, 1988 |
| 4755480 |
Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition |
Jul. 5, 1988 |
| 4725560 |
Silicon oxynitride storage node dielectric |
Feb. 16, 1988 |
| 4699690 |
Method of producing semiconductor memory device |
Oct. 13, 1987 |
| 4621277 |
Semiconductor device having insulating film |
Nov. 4, 1986 |
| 4583281 |
Method of making an integrated circuit |
Apr. 22, 1986 |
| 4581622 |
UV erasable EPROM with UV transparent silicon oxynitride coating |
Apr. 8, 1986 |
| 4575921 |
Silicon nitride formation and use in self-aligned semiconductor device manufacturing method |
Mar. 18, 1986 |
| 4419142 |
Method of forming dielectric isolation of device regions |
Dec. 6, 1983 |
| 4333964 |
Method of making integrated circuits |
Jun. 8, 1982 |
| 4333965 |
Method of making integrated circuits |
Jun. 8, 1982 |
| 4331710 |
Method of forming an insulation film on semiconductor device surface |
May. 25, 1982 |
| 4219925 |
Method of manufacturing a device in a silicon wafer |
Sep. 2, 1980 |
| 4196441 |
Semiconductor storage cell |
Apr. 1, 1980 |
| 4170502 |
Method of manufacturing a gate turn-off thyristor |
Oct. 9, 1979 |
| 4151631 |
Method of manufacturing Si gate MOS integrated circuit |
May. 1, 1979 |
| 4113515 |
Semiconductor manufacturing method using buried nitride formed by a nitridation treatment in the presence of active nitrogen |
Sep. 12, 1978 |
| 4105805 |
Formation of metal nitride oxide semiconductor (MNOS) by ion implantation of oxygen through a silicon nitride layer |
Aug. 8, 1978 |
| 4102715 |
Method for diffusing an impurity into a semiconductor body |
Jul. 25, 1978 |
| 4097889 |
Combination glass/low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub. z |
Jun. 27, 1978 |
| 4091406 |
Combination glass/low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub. z |
May. 23, 1978 |
| 4084986 |
Method of manufacturing a semi-insulating silicon layer |
Apr. 18, 1978 |
| 4077112 |
Method of manufacturing charge transfer device |
Mar. 7, 1978 |
