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Class Information
Number: 148/DIG.112
Name: Metal treatment > Nitridation, direct, of silicon
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5780364 |
Method to cure mobile ion contamination in semiconductor processing |
Jul. 14, 1998 |
| 5650344 |
Method of making non-uniformly nitrided gate oxide |
Jul. 22, 1997 |
| 5518946 |
Process for fabricating capacitors in dynamic RAM |
May. 21, 1996 |
| 5492854 |
Method of manufacturing semiconductor device |
Feb. 20, 1996 |
| 5397720 |
Method of making MOS transistor having improved oxynitride dielectric |
Mar. 14, 1995 |
| 5278087 |
Method of making a single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate |
Jan. 11, 1994 |
| 5264396 |
Method for enhancing nitridation and oxidation growth by introducing pulsed NF.sub.3 |
Nov. 23, 1993 |
| 5258333 |
Composite dielectric for a semiconductor device and method of fabrication |
Nov. 2, 1993 |
| 5256563 |
Doped well structure and method for semiconductor technologies |
Oct. 26, 1993 |
| 5254489 |
Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation |
Oct. 19, 1993 |
| 5236862 |
Method of forming oxide isolation |
Aug. 17, 1993 |
| 5198392 |
Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) film |
Mar. 30, 1993 |
| 4980307 |
Process for producing a semiconductor device having a silicon oxynitride insulative film |
Dec. 25, 1990 |
| 4784973 |
Semiconductor contact silicide/nitride process with control for silicide thickness |
Nov. 15, 1988 |
| 4740483 |
Selective LPCVD tungsten deposition by nitridation of a dielectric |
Apr. 26, 1988 |
| 4621277 |
Semiconductor device having insulating film |
Nov. 4, 1986 |
| 4575921 |
Silicon nitride formation and use in self-aligned semiconductor device manufacturing method |
Mar. 18, 1986 |
| 4331710 |
Method of forming an insulation film on semiconductor device surface |
May. 25, 1982 |
| 4266985 |
Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate |
May. 12, 1981 |
| 4113515 |
Semiconductor manufacturing method using buried nitride formed by a nitridation treatment in the presence of active nitrogen |
Sep. 12, 1978 |
| 4102715 |
Method for diffusing an impurity into a semiconductor body |
Jul. 25, 1978 |
| 4084986 |
Method of manufacturing a semi-insulating silicon layer |
Apr. 18, 1978 |
| 4016007 |
Method for fabricating a silicon device utilizing ion-implantation and selective oxidation |
Apr. 5, 1977 |
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