| Patent Number |
Title Of Patent |
Date Issued |
| 5712182 |
Method of forming a microelectronic device having a cavity smaller than lithographic tolerances |
Jan. 27, 1998 |
| 5702967 |
Method of fabricating a deep submicron MOSFET device using a recessed, narrow polysilicon gate structure |
Dec. 30, 1997 |
| 5510286 |
Method for forming narrow contact holes of a semiconductor device |
Apr. 23, 1996 |
| 5432126 |
Fabrication process of compound semiconductor device comprising L-shaped gate electrode |
Jul. 11, 1995 |
| 5399525 |
Process for manufacturing integrated circuits with very narrow electrodes |
Mar. 21, 1995 |
| 5366913 |
Method of manufacturing semiconductor device employing oxide sidewalls |
Nov. 22, 1994 |
| 5314836 |
Method of making a single electrode level CCD |
May. 24, 1994 |
| 5302544 |
Method of making CCD having a single level electrode of single crystalline silicon |
Apr. 12, 1994 |
| 5256584 |
Method for producing a non-volatile memory cell using spacers |
Oct. 26, 1993 |
| 5215937 |
Optimizing doping control in short channel MOS |
Jun. 1, 1993 |
| 5130272 |
Process for defining and forming an active region of very limited dimensions in a semiconductor layer |
Jul. 14, 1992 |
| 5110760 |
Method of nanometer lithography |
May. 5, 1992 |
| 5106764 |
Device fabrication |
Apr. 21, 1992 |
| 5094968 |
Fabricating a narrow width EEPROM with single diffusion electrode formation |
Mar. 10, 1992 |
| 5063167 |
Method of producing a bipolar transistor with spacers |
Nov. 5, 1991 |
| 5001080 |
Method for producing a monolithically integrated optoelectronic device |
Mar. 19, 1991 |
| 4975382 |
Method of making a self-aligned field-effect transistor by the use of a dummy-gate |
Dec. 4, 1990 |
| 4963501 |
Method of fabricating semiconductor devices with sub-micron linewidths |
Oct. 16, 1990 |
| 4902646 |
MESFET process employing dummy electrodes and resist reflow |
Feb. 20, 1990 |
| 4879254 |
Method of manufacturing a DMOS |
Nov. 7, 1989 |
| 4851368 |
Method of making travelling wave semi-conductor laser |
Jul. 25, 1989 |
| 4803181 |
Process for forming sub-micrometer patterns using silylation of resist side walls |
Feb. 7, 1989 |
| 4759822 |
Methods for producing an aperture in a surface |
Jul. 26, 1988 |
| 4753901 |
Two mask technique for planarized trench oxide isolation of integrated devices |
Jun. 28, 1988 |
| 4738683 |
Method of fabrication of gates for integrated circuits |
Apr. 19, 1988 |
| 4651407 |
Method of fabricating a junction field effect transistor utilizing epitaxial overgrowth and vertical junction formation |
Mar. 24, 1987 |
| 4649626 |
Semiconductor on insulator edge doping process using an expanded mask |
Mar. 17, 1987 |
| 4631568 |
Bipolar transistor construction |
Dec. 23, 1986 |
| 4573257 |
Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key |
Mar. 4, 1986 |
| 4541166 |
Method of making semiconductor deivce using a conductive layer as mask |
Sep. 17, 1985 |
| 4460413 |
Method of patterning device regions by oxidizing patterned aluminum layer |
Jul. 17, 1984 |
| 4334348 |
Retro-etch process for forming gate electrodes of MOS integrated circuits |
Jun. 15, 1982 |
| 4331708 |
Method of fabricating narrow deep grooves in silicon |
May. 25, 1982 |
| 4316203 |
Insulated gate field effect transistor |
Feb. 16, 1982 |
| 4253888 |
Pretreatment of photoresist masking layers resulting in higher temperature device processing |
Mar. 3, 1981 |
| 4244001 |
Fabrication of an integrated injection logic device with narrow basewidth |
Jan. 6, 1981 |
| 4239559 |
Method for fabricating a semiconductor device by controlled diffusion between adjacent layers |
Dec. 16, 1980 |
| 4211582 |
Process for making large area isolation trenches utilizing a two-step selective etching technique |
Jul. 8, 1980 |
| 4200878 |
Method of fabricating a narrow base-width bipolar device and the product thereof |
Apr. 29, 1980 |
| 4148054 |
Method of manufacturing a semiconductor device and device manufactured by using the method |
Apr. 3, 1979 |
| 4124933 |
Methods of manufacturing semiconductor devices |
Nov. 14, 1978 |
| 4093503 |
Method for fabricating ultra-narrow metallic lines |
Jun. 6, 1978 |
| 4038107 |
Method for making transistor structures |
Jul. 26, 1977 |
| 4026740 |
Process for fabricating narrow polycrystalline silicon members |
May. 31, 1977 |
| 3975818 |
Method of forming closely spaced electrodes onto semiconductor device |
Aug. 24, 1976 |
| 3940288 |
Method of making a semiconductor device |
Feb. 24, 1976 |
