| Patent Number |
Title Of Patent |
Date Issued |
| 5858818 |
Formation of InGaSa p-n Junction by control of growth temperature |
Jan. 12, 1999 |
| 5789273 |
Method for fabricating compound semiconductor laser |
Aug. 4, 1998 |
| 5369044 |
Method for producing a semiconductor device |
Nov. 29, 1994 |
| 5298445 |
Method for fabricating a field effect transistor |
Mar. 29, 1994 |
| 5288657 |
Device fabrication |
Feb. 22, 1994 |
| 5284791 |
Method of making tunable semiconductor laser |
Feb. 8, 1994 |
| 5275966 |
Low temperature process for producing antimony-containing semiconductor materials |
Jan. 4, 1994 |
| 5264389 |
Method of manufacturing a semiconductor laser device |
Nov. 23, 1993 |
| 5256595 |
Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor |
Oct. 26, 1993 |
| 5244829 |
Organometallic vapor-phase epitaxy process using (CH.sub.3).sub.3 As and CCl.sub.4 for improving stability of carbon-doped GaAs |
Sep. 14, 1993 |
| 5232873 |
Method of fabricating contacts for semiconductor devices |
Aug. 3, 1993 |
| 5202283 |
Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species |
Apr. 13, 1993 |
| 5173445 |
Method of making P-type compound semiconductor employing trimethylgallium, trimethylarsenic and arsine |
Dec. 22, 1992 |
| 5171704 |
GaAs device fabrication utilizing metalorganic molecular beam epitaxy (MOMBE) |
Dec. 15, 1992 |
| 5168077 |
Method of manufacturing a p-type compound semiconductor thin film containing a III-group element and a v-group element by metal organics chemical vapor deposition |
Dec. 1, 1992 |
| 5141569 |
Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate |
Aug. 25, 1992 |
| 5128275 |
Method for fabricating a semiconductor device including a semi-insulating semiconductor layer |
Jul. 7, 1992 |
| 5064778 |
Vapor-phase epitaxial growth method |
Nov. 12, 1991 |
| 5045496 |
Semi-insulating cobalt doped indium phosphide grown by MOCVD |
Sep. 3, 1991 |
| 5036022 |
Metal organic vapor phase epitaxial growth of group III-V semiconductor materials |
Jul. 30, 1991 |
| 5026661 |
Method of manufacturing zinc chalcogenide semiconductor devices using LP-MOCVD |
Jun. 25, 1991 |
| 4994408 |
Epitaxial film growth using low pressure MOCVD |
Feb. 19, 1991 |
| 4965222 |
Method of manufacturing an epitaxial indium phosphide layer on a substrate surface |
Oct. 23, 1990 |
| 4948753 |
Method of producing stripe-structure semiconductor laser |
Aug. 14, 1990 |
| 4946802 |
Semiconductor laser device fabricating method |
Aug. 7, 1990 |
| 4935381 |
Process for growing GaAs epitaxial layers |
Jun. 19, 1990 |
| 4933299 |
Method of forming 3-D structures using MOVCD with in-situ photoetching |
Jun. 12, 1990 |
| 4920068 |
Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials |
Apr. 24, 1990 |
| 4916089 |
Process for the epitaxial production of semiconductor stock material |
Apr. 10, 1990 |
| 4910167 |
III-V Semiconductor growth initiation on silicon using TMG and TEG |
Mar. 20, 1990 |
| 4904616 |
Method of depositing arsine, antimony and phosphine substitutes |
Feb. 27, 1990 |
| 4902356 |
Epitaxial substrate for high-intensity led, and method of manufacturing same |
Feb. 20, 1990 |
| 4859625 |
Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy |
Aug. 22, 1989 |
| 4859627 |
Group VI doping of III-V semiconductors during ALE |
Aug. 22, 1989 |
| 4855250 |
Method of manufacturing a semiconductor laser with autodoping control |
Aug. 8, 1989 |
| 4855249 |
Process for growing III-V compound semiconductors on sapphire using a buffer layer |
Aug. 8, 1989 |
| 4845049 |
Doping III-V compound semiconductor devices with group VI monolayers using ALE |
Jul. 4, 1989 |
| 4835116 |
Annealing method for III-V deposition |
May. 30, 1989 |
| 4830982 |
Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors |
May. 16, 1989 |
| 4829022 |
Method for forming thin films of compound semiconductors by flow rate modulation epitaxy |
May. 9, 1989 |
| 4829020 |
Substrate solder barriers for semiconductor epilayer growth |
May. 9, 1989 |
| 4829021 |
Process for vacuum chemical epitaxy |
May. 9, 1989 |
| 4826784 |
Selective OMCVD growth of compound semiconductor materials on silicon substrates |
May. 2, 1989 |
| 4824798 |
Method of introducing impurity species into a semiconductor structure from a deposited source |
Apr. 25, 1989 |
| 4793872 |
III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices |
Dec. 27, 1988 |
| 4782034 |
Semi-insulating group III-V based compositions doped using bis arene titanium sources |
Nov. 1, 1988 |
| 4748135 |
Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control |
May. 31, 1988 |
| 4636268 |
Chemical beam deposition method utilizing alkyl compounds in a carrier gas |
Jan. 13, 1987 |
| 4632711 |
Vapor phase epitaxial growth method of zinc selenide and zinc selenide-sulphide by organometallic chemical vapor deposition |
Dec. 30, 1986 |
| 4622083 |
Molecular beam epitaxial process |
Nov. 11, 1986 |
