| Patent Number |
Title Of Patent |
Date Issued |
| 6124180 |
BiCMOS process for counter doped collector |
Sep. 26, 2000 |
| 6001701 |
Process for making bipolar having graded or modulated collector |
Dec. 14, 1999 |
| 5915186 |
Method of manufacturing heterojunction bipolar device having Si.sub.1-x Ge.sub.x base |
Jun. 22, 1999 |
| 5904536 |
Self aligned poly emitter bipolar technology using damascene technique |
May. 18, 1999 |
| 5856228 |
Manufacturing method for making bipolar device having double polysilicon structure |
Jan. 5, 1999 |
| 5846868 |
Method for forming a walled-emitter transistor |
Dec. 8, 1998 |
| 5837553 |
Method of making high voltage, junction isolation semiconductor device having dual conductivity type buried regions |
Nov. 17, 1998 |
| 5824589 |
Method for forming bipolar transistor having a reduced base transit time |
Oct. 20, 1998 |
| 5814548 |
Process for making n-channel or p-channel permeable base transistor with a plurality layers |
Sep. 29, 1998 |
| 5736417 |
Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor |
Apr. 7, 1998 |
| 5733791 |
Methods for fabrication of bipolar device having high ratio of emitter to base area |
Mar. 31, 1998 |
| 5721147 |
Methods of forming bipolar junction transistors |
Feb. 24, 1998 |
| 5719082 |
Angled implant to improve high current operation of bipolar transistors |
Feb. 17, 1998 |
| 5712174 |
Method of manufacturing a bipolar transistor |
Jan. 27, 1998 |
| 5702958 |
Method for the fabrication of bipolar transistors |
Dec. 30, 1997 |
| 5700701 |
Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors |
Dec. 23, 1997 |
| 5681763 |
Method for making bipolar transistors having indium doped base |
Oct. 28, 1997 |
| 5677209 |
Method for fabricating a vertical bipolar transistor |
Oct. 14, 1997 |
| 5672522 |
Method for making selective subcollector heterojunction bipolar transistors |
Sep. 30, 1997 |
| 5670417 |
Method for fabricating self-aligned semiconductor component |
Sep. 23, 1997 |
| 5670394 |
Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source |
Sep. 23, 1997 |
| 5648279 |
Method of manufacturing bipolar transistor having emitter region and external base region formed in self alignment manner |
Jul. 15, 1997 |
| 5643806 |
Manufacturing method for making bipolar device |
Jul. 1, 1997 |
| 5624854 |
Method of formation of bipolar transistor having reduced parasitic capacitance |
Apr. 29, 1997 |
| H1637 |
Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS) |
Mar. 4, 1997 |
| 5599723 |
Method for manufacturing bipolar transistor having reduced base-collector parasitic capacitance |
Feb. 4, 1997 |
| 5593905 |
Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link |
Jan. 14, 1997 |
| 5587326 |
Method of forming bipolar junction transistor of epitaxial planar type |
Dec. 24, 1996 |
| 5587327 |
Process for preparing a heterojunction bipolar transistor |
Dec. 24, 1996 |
| 5585287 |
Method of forming integrated current-limiter device for power MOS transistors |
Dec. 17, 1996 |
| 5583059 |
Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI |
Dec. 10, 1996 |
| 5578522 |
Semiconductor device and method of fabricating same |
Nov. 26, 1996 |
| 5569611 |
Method of manufacturing a bipolar transistor operating at low temperature |
Oct. 29, 1996 |
| 5541124 |
Method for making bipolar transistor having double polysilicon structure |
Jul. 30, 1996 |
| 5523245 |
Process for fabricating high-performance facet-free small-sized bipolar transistor |
Jun. 4, 1996 |
| 5516709 |
Method of manufacturing bipolar transistor with reduced numbers of steps without increasing collector resistance |
May. 14, 1996 |
| 5512496 |
Method of making collector-up bipolar transistor having improved emitter injection efficiency |
Apr. 30, 1996 |
| 5506157 |
Method for fabricating pillar bipolar transistor |
Apr. 9, 1996 |
| 5504018 |
Process of fabricating bipolar transistor having epitaxially grown base layer without deterioration of transistor characteristics |
Apr. 2, 1996 |
| 5501992 |
Method of manufacturing bipolar transistor having ring-shaped emitter and base |
Mar. 26, 1996 |
| 5496744 |
Method of fabricating complementary poly emitter transistors |
Mar. 5, 1996 |
| 5496745 |
Method for making bipolar transistor having an enhanced trench isolation |
Mar. 5, 1996 |
| 5494836 |
Process of producing heterojunction bipolar transistor with silicon-germanium base |
Feb. 27, 1996 |
| 5492844 |
Method of manufacturing increased conductivity base contact/feeders with self-aligned structures |
Feb. 20, 1996 |
| 5488003 |
Method of making emitter trench BiCMOS using integrated dual layer emitter mask |
Jan. 30, 1996 |
| 5488002 |
Method for manufacturing self-aligned bipolar transistors using double diffusion |
Jan. 30, 1996 |
| 5484738 |
Method of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuits |
Jan. 16, 1996 |
| 5478760 |
Process for fabricating a vertical bipolar junction transistor |
Dec. 26, 1995 |
| 5459084 |
Method for fabricating hetero-junction bipolar transistor having reduced base parasitic resistance |
Oct. 17, 1995 |
| 5455188 |
Process for fabricating a lateral bipolar junction transistor |
Oct. 3, 1995 |
