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Class Information
Number: 148/DIG.100
Name: Metal treatment > Lift-off masking
Description:










Patents under this class:
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Patent Number Title Of Patent Date Issued
6093586 Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor Jul. 25, 2000
5994194 Self-aligned base ohmic metal for an HBT device cross-reference to related applications Nov. 30, 1999
5918130 Transistor fabrication employing formation of silicide across source and drain regions prior to formation of the gate conductor Jun. 29, 1999
5869390 Method for forming electrode on diamond for electronic devices Feb. 9, 1999
5856232 Method for fabricating T-shaped electrode and metal layer having low resistance Jan. 5, 1999
5854097 Method of manufacturing a semiconductor device Dec. 29, 1998
5770467 Method for forming electrode on diamond for electronic devices Jun. 23, 1998
5736417 Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor Apr. 7, 1998
5693548 Method for making T-gate of field effect transistor Dec. 2, 1997
5686325 Method for forming MESFET having T-shaped gate electrode Nov. 11, 1997
5679608 Processing techniques for achieving production-worthy, low dielectric, low dielectric, low interconnect resistance and high performance IC Oct. 21, 1997
5614438 Method for making LSCO stack electrode Mar. 25, 1997
5605845 Manufacture of electronic devices comprising thin-film transistors having self-aligned plural gates Feb. 25, 1997
5587328 Method for manufacturing semiconductor device Dec. 24, 1996
5583063 Method of forming T-shaped, cross-sectional pattern using two layered masks Dec. 10, 1996
5550065 Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact Aug. 27, 1996
5541128 Self-aligned thin-film transistor constructed using lift-off technique Jul. 30, 1996
5527726 Self-aligned thin-film transistor constructed using lift-off technique Jun. 18, 1996
5500381 Fabrication method of field-effect transistor Mar. 19, 1996
5498572 Method of manufacturing semiconductor device Mar. 12, 1996
5451175 Method of fabricating electronic device employing field emission devices with dis-similar electron emission characteristics Sep. 19, 1995
5445979 Method of making field effect compound semiconductor device with eaves electrode Aug. 29, 1995
5391507 Lift-off fabrication method for self-aligned thin film transistors Feb. 21, 1995
5358885 Method of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitance Oct. 25, 1994
5288654 Method of making a mushroom-shaped gate electrode of semiconductor device Feb. 22, 1994
5286335 Processes for lift-off and deposition of thin film materials Feb. 15, 1994
5273918 Process for the manufacture of a junction field effect transistor Dec. 28, 1993
5266526 Method of forming trench buried wiring for semiconductor device Nov. 30, 1993
5250451 Process for the production of thin film transistors Oct. 5, 1993
5240878 Method for forming patterned films on a substrate Aug. 31, 1993
5231040 Method of making a field effect transistor Jul. 27, 1993
5223454 Method of manufacturing semiconductor integrated circuit device Jun. 29, 1993
5215939 Method of manufacturing a planar buried heterojunction laser Jun. 1, 1993
5212117 Method of manufacturing a semiconductor device contact structure using lift May. 18, 1993
5202286 Method of forming three-dimensional features on substrates with adjacent insulating films Apr. 13, 1993
5190892 Method for forming pattern using lift-off Mar. 2, 1993
5185277 Method for the making of a transistor gate Feb. 9, 1993
5182218 Production methods for compound semiconductor device having lightly doped drain structure Jan. 26, 1993
5171718 Method for forming a fine pattern by using a patterned resist layer Dec. 15, 1992
5171711 Method of manufacturing integrated circuit devices Dec. 15, 1992
5149671 Method for forming multilayer indium bump contact Sep. 22, 1992
5124275 Method of manufacturing by autoalignment an integrated semiconductor device comprising at least the formation of an encapsulated first electrode contact provided with spacers and of a second a Jun. 23, 1992
5114871 Manufacturing diamond electronic devices May. 19, 1992
5112763 Process for forming a Schottky barrier gate May. 12, 1992
5096846 Method of forming a quantum effect switching device Mar. 17, 1992
5094980 Method for providing a metal-semiconductor contact Mar. 10, 1992
5093280 Refractory metal ohmic contacts and method Mar. 3, 1992
5091342 Multilevel resist plated transfer layer process for fine line lithography Feb. 25, 1992
5084409 Method for patterned heteroepitaxial growth Jan. 28, 1992
5068207 Method for producing a planar surface in integrated circuit manufacturing Nov. 26, 1991

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