| Patent Number |
Title Of Patent |
Date Issued |
| 6404039 |
Semiconductor device with intrinsic base diffusion layer, extrinsic base diffusion layer, and common base diffusion |
Jun. 11, 2002 |
| 6235601 |
Method of manufacturing a self-aligned vertical bipolar transistor |
May. 22, 2001 |
| 6124180 |
BiCMOS process for counter doped collector |
Sep. 26, 2000 |
| 6001701 |
Process for making bipolar having graded or modulated collector |
Dec. 14, 1999 |
| 5915186 |
Method of manufacturing heterojunction bipolar device having Si.sub.1-x Ge.sub.x base |
Jun. 22, 1999 |
| 5904536 |
Self aligned poly emitter bipolar technology using damascene technique |
May. 18, 1999 |
| 5880002 |
Method for making isolated vertical PNP transistor in a digital BiCMOS process |
Mar. 9, 1999 |
| 5856228 |
Manufacturing method for making bipolar device having double polysilicon structure |
Jan. 5, 1999 |
| 5846868 |
Method for forming a walled-emitter transistor |
Dec. 8, 1998 |
| 5846867 |
Method of producing Si-Ge base heterojunction bipolar device |
Dec. 8, 1998 |
| 5837574 |
Method of manufacturing a thin poly, capacitor coupled contactless imager with high resolution and wide dynamic range |
Nov. 17, 1998 |
| 5837553 |
Method of making high voltage, junction isolation semiconductor device having dual conductivity type buried regions |
Nov. 17, 1998 |
| 5824589 |
Method for forming bipolar transistor having a reduced base transit time |
Oct. 20, 1998 |
| 5773350 |
Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base |
Jun. 30, 1998 |
| 5736417 |
Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor |
Apr. 7, 1998 |
| 5733791 |
Methods for fabrication of bipolar device having high ratio of emitter to base area |
Mar. 31, 1998 |
| 5721147 |
Methods of forming bipolar junction transistors |
Feb. 24, 1998 |
| 5719082 |
Angled implant to improve high current operation of bipolar transistors |
Feb. 17, 1998 |
| 5712174 |
Method of manufacturing a bipolar transistor |
Jan. 27, 1998 |
| 5705407 |
Method of forming high performance bipolar devices with improved wiring options |
Jan. 6, 1998 |
| 5698460 |
Method of self-aligning an emitter contact in a planar heterojunction bipolar transistor and apparatus thereof |
Dec. 16, 1997 |
| 5698459 |
Fabrication of bipolar transistors using selective doping to improve performance characteristics |
Dec. 16, 1997 |
| 5681763 |
Method for making bipolar transistors having indium doped base |
Oct. 28, 1997 |
| 5679586 |
Composite mask process for semiconductor fabrication |
Oct. 21, 1997 |
| 5677209 |
Method for fabricating a vertical bipolar transistor |
Oct. 14, 1997 |
| 5672522 |
Method for making selective subcollector heterojunction bipolar transistors |
Sep. 30, 1997 |
| 5670394 |
Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source |
Sep. 23, 1997 |
| 5670417 |
Method for fabricating self-aligned semiconductor component |
Sep. 23, 1997 |
| 5648279 |
Method of manufacturing bipolar transistor having emitter region and external base region formed in self alignment manner |
Jul. 15, 1997 |
| 5646055 |
Method for making bipolar transistor |
Jul. 8, 1997 |
| 5643805 |
Process for producing a bipolar device |
Jul. 1, 1997 |
| 5643806 |
Manufacturing method for making bipolar device |
Jul. 1, 1997 |
| 5643809 |
Method for making high speed poly-emitter bipolar transistor |
Jul. 1, 1997 |
| 5624854 |
Method of formation of bipolar transistor having reduced parasitic capacitance |
Apr. 29, 1997 |
| 5605850 |
Method for making a low-noise bipolar transistor |
Feb. 25, 1997 |
| 5605849 |
Use of oblique implantation in forming base of bipolar transistor |
Feb. 25, 1997 |
| 5599723 |
Method for manufacturing bipolar transistor having reduced base-collector parasitic capacitance |
Feb. 4, 1997 |
| 5593905 |
Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link |
Jan. 14, 1997 |
| 5591656 |
Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor |
Jan. 7, 1997 |
| 5589409 |
Fabrication of bipolar transistors with improved output current-voltage characteristics |
Dec. 31, 1996 |
| 5587326 |
Method of forming bipolar junction transistor of epitaxial planar type |
Dec. 24, 1996 |
| 5585287 |
Method of forming integrated current-limiter device for power MOS transistors |
Dec. 17, 1996 |
| 5583059 |
Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI |
Dec. 10, 1996 |
| 5580798 |
Method of fabricating bipolar transistor having a guard ring |
Dec. 3, 1996 |
| 5569611 |
Method of manufacturing a bipolar transistor operating at low temperature |
Oct. 29, 1996 |
| 5569612 |
Process for manufacturing a bipolar power transistor having a high breakdown voltage |
Oct. 29, 1996 |
| 5554543 |
Process for fabricating bipolar junction transistor having reduced parasitic capacitance |
Sep. 10, 1996 |
| 5541121 |
Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer |
Jul. 30, 1996 |
| 5523244 |
Transistor fabrication method using dielectric protection layers to eliminate emitter defects |
Jun. 4, 1996 |
| 5516709 |
Method of manufacturing bipolar transistor with reduced numbers of steps without increasing collector resistance |
May. 14, 1996 |
