| Patent Number |
Title Of Patent |
Date Issued |
| 7553368 |
Process for manufacturing a gallium rich gallium nitride film |
Jun. 30, 2009 |
| 6800539 |
Thin film formation method |
Oct. 5, 2004 |
| 6323072 |
Method for forming semiconductor thin film |
Nov. 27, 2001 |
| 6177127 |
Method of monitoring emissivity |
Jan. 23, 2001 |
| 6124186 |
Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique |
Sep. 26, 2000 |
| 5981326 |
Damascene isolation of CMOS transistors |
Nov. 9, 1999 |
| 5946601 |
Unique .alpha.-C:N:H/.alpha.-C:N.sub.x film liner/barrier to prevent fluorine outdiffusion from .alpha.-FC chemical vapor deposition dielectric layers |
Aug. 31, 1999 |
| 5902650 |
Method of depositing amorphous silicon based films having controlled conductivity |
May. 11, 1999 |
| 5894037 |
Silicon semiconductor substrate and method of fabricating the same |
Apr. 13, 1999 |
| 5874129 |
Low temperature, high pressure silicon deposition method |
Feb. 23, 1999 |
| 5863598 |
Method of forming doped silicon in high aspect ratio openings |
Jan. 26, 1999 |
| 5849601 |
Electro-optical device and method for manufacturing the same |
Dec. 15, 1998 |
| 5811323 |
Process for fabricating a thin film transistor |
Sep. 22, 1998 |
| 5789030 |
Method for depositing doped amorphous or polycrystalline silicon on a substrate |
Aug. 4, 1998 |
| 5776819 |
Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas |
Jul. 7, 1998 |
| 5705411 |
Reactive ion etching to physically etch thin film semiconductor |
Jan. 6, 1998 |
| 5700520 |
Low temperature, high pressure silicon deposition method |
Dec. 23, 1997 |
| 5686320 |
Method for forming semiconductor layer of thin film transistor by using temperature difference |
Nov. 11, 1997 |
| 5674777 |
Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device |
Oct. 7, 1997 |
| 5648293 |
Method of growing an amorphous silicon film |
Jul. 15, 1997 |
| 5648287 |
Method of salicidation for deep quarter micron LDD MOSFET devices |
Jul. 15, 1997 |
| 5614257 |
Low temperature, high pressure silicon deposition method |
Mar. 25, 1997 |
| 5597741 |
Process for forming a recrystallized layer and diffusing impurities |
Jan. 28, 1997 |
| 5585295 |
Method for forming inverse-T gate lightly-doped drain (ITLDD) device |
Dec. 17, 1996 |
| 5576060 |
CVD process of forming hydrogenated a-Si films |
Nov. 19, 1996 |
| 5552027 |
Working electrode for electrochemical enzymatic sensor systems |
Sep. 3, 1996 |
| 5531182 |
Method of making a semiconductor thin-film |
Jul. 2, 1996 |
| 5529937 |
Process for fabricating thin film transistor |
Jun. 25, 1996 |
| 5518937 |
Semiconductor device having a region doped to a level exceeding the solubility limit |
May. 21, 1996 |
| 5514618 |
Process for manufacture of flat panel liquid crystal display using direct laser etch |
May. 7, 1996 |
| 5491107 |
Semiconductor processing method for providing large grain polysilicon films |
Feb. 13, 1996 |
| 5488000 |
Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer |
Jan. 30, 1996 |
| 5451545 |
Process for forming stable local interconnect/active area silicide structure VLSI applications |
Sep. 19, 1995 |
| 5441914 |
Method of forming conductive interconnect structure |
Aug. 15, 1995 |
| 5424230 |
Method of manufacturing a polysilicon thin film transistor |
Jun. 13, 1995 |
| 5422311 |
Method for manufacturing a conductor layer in a semiconductor device |
Jun. 6, 1995 |
| 5391518 |
Method of making a field programmable read only memory (ROM) cell using an amorphous silicon fuse with buried contact polysilicon and metal electrodes |
Feb. 21, 1995 |
| 5366921 |
Process for fabricating an electronic circuit apparatus |
Nov. 22, 1994 |
| 5366928 |
Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body |
Nov. 22, 1994 |
| 5346833 |
Simplified method of making active matrix liquid crystal display |
Sep. 13, 1994 |
| 5326712 |
Method for manufacturing a thin film transistor |
Jul. 5, 1994 |
| 5318920 |
Method for manufacturing a capacitor having a rough electrode surface |
Jun. 7, 1994 |
| 5310698 |
Process for producing an arsenic-doped smooth polycrystalline silicon layer for very large scale integrated circuits |
May. 10, 1994 |
| 5302549 |
Metal-semiconductor ohmic contact forming process |
Apr. 12, 1994 |
| 5296405 |
Method for photo annealing non-single crystalline semiconductor films |
Mar. 22, 1994 |
| 5290734 |
Method for making anti-fuse structures |
Mar. 1, 1994 |
| 5290729 |
Stacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereof |
Mar. 1, 1994 |
| 5283207 |
Photoconductive material and photosensor employing the photoconductive material |
Feb. 1, 1994 |
| 5281546 |
Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface |
Jan. 25, 1994 |
| 5278087 |
Method of making a single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate |
Jan. 11, 1994 |
