| Class Number |
Class Name |
Patents |
| 148/22 |
Compositions |
92 |
| 148/33 |
Barrier layer stock material, p-n type |
183 |
| 148/400 |
Stock |
170 |
| 148/900 |
Ion implanted |
32 |
| 148/901 |
Surface depleted in an alloy component (e.g., decarburized) |
14 |
| 148/902 |
Having portions of differing metallurgical properties or characteristics |
149 |
| 148/95 |
Process of modifying or maintaining internal physical structure (i.e., microstructure) or chemical properties of metal, process of reactive coating of metal and process of chemical-heat removing (e.g., flame-cutting, etc.) or burning of metal |
35 |
| 148/DIG.1 |
Amorphous semiconductor |
120 |
| 148/DIG.10 |
Bipolar transistors-ion implantation |
218 |
| 148/DIG.100 |
Lift-off masking |
86 |
| 148/DIG.101 |
Liquid phase epitaxy lpe |
13 |
| 148/DIG.102 |
Mask alignment |
66 |
| 148/DIG.103 |
Mask, dual function e.g., diffusion and oxidation |
30 |
| 148/DIG.104 |
Mask, movable |
13 |
| 148/DIG.105 |
Masks, metal |
88 |
| 148/DIG.106 |
Masks, special |
187 |
| 148/DIG.107 |
Melt |
14 |
| 148/DIG.108 |
Melt back |
5 |
| 148/DIG.109 |
Memory devices |
17 |
| 148/DIG.11 |
Bipolar transistors |
201 |
| 148/DIG.110 |
Metal-organic cvd (ruehrwein type) |
65 |
| 148/DIG.111 |
Narrow masking |
46 |
| 148/DIG.112 |
Nitridation, direct, of silicon |
23 |
| 148/DIG.113 |
Nitrides of boron or aluminum or gallium |
52 |
| 148/DIG.114 |
Nitrides of silicon |
58 |
| 148/DIG.115 |
Orientation |
34 |
| 148/DIG.116 |
Oxidation, differential |
38 |
| 148/DIG.117 |
Oxidation, selective |
161 |
| 148/DIG.118 |
Oxide films |
122 |
| 148/DIG.119 |
Phosphides of gallium or indium |
39 |
| 148/DIG.12 |
Bonding e.g., electrostatic for strain gauges |
242 |
| 148/DIG.120 |
Photocathodes-cs coated and solar cell |
55 |
| 148/DIG.121 |
Plastic temperature |
0 |
| 148/DIG.122 |
Polycrystalline |
174 |
| 148/DIG.123 |
Polycrystalline diffuse anneal |
47 |
| 148/DIG.124 |
Polycrystalline emitter |
84 |
| 148/DIG.125 |
Polycrystalline passivation |
17 |
| 148/DIG.126 |
Power fets |
121 |
| 148/DIG.127 |
Process induced defects |
9 |
| 148/DIG.128 |
Proton bombardment of silicon |
23 |
| 148/DIG.129 |
Pulse doping |
2 |
| 148/DIG.13 |
Breakdown voltage |
12 |
| 148/DIG.130 |
Purification |
7 |
| 148/DIG.131 |
Reactive ion etching rie |
96 |
| 148/DIG.132 |
Recoil implantation |
2 |
| 148/DIG.133 |
Reflow oxides and glasses |
64 |
| 148/DIG.134 |
Remelt |
7 |
| 148/DIG.135 |
Removal of substrate |
218 |
| 148/DIG.136 |
Resistors |
82 |
| 148/DIG.137 |
Resists |
35 |
| 148/DIG.138 |
Roughened surface |
30 |
| 148/DIG.139 |
Schottky barrier |
67 |
| 148/DIG.14 |
Capacitor |
105 |
| 148/DIG.140 |
Schottky barrier contacts |
92 |
| 148/DIG.141 |
Self-alignment coat gate |
71 |
| 148/DIG.142 |
Semiconductor-metal-semiconductor |
11 |
| 148/DIG.143 |
Shadow masking |
68 |
| 148/DIG.144 |
Shallow diffusion |
12 |
| 148/DIG.145 |
Shaped junctions |
44 |
| 148/DIG.146 |
Sheet resistance (dopant parameters) |
3 |
| 148/DIG.147 |
Silicides |
166 |
| 148/DIG.148 |
Silicon carbide |
62 |
| 148/DIG.149 |
Silicon on iii-v |
12 |
| 148/DIG.15 |
Capping layer |
46 |
| 148/DIG.150 |
Silicon on sapphire sos |
188 |
| 148/DIG.151 |
Simultaneous diffusion |
52 |
| 148/DIG.152 |
Single crystal on amorphous substrate |
33 |
| 148/DIG.153 |
Solar cells-implantations-laser beam |
40 |
| 148/DIG.154 |
Solid phase epitaxy |
32 |
| 148/DIG.155 |
Solid solubility |
3 |
| 148/DIG.156 |
Sonos |
8 |
| 148/DIG.157 |
Special diffusion and profiles |
14 |
| 148/DIG.158 |
Sputtering |
32 |
| 148/DIG.159 |
Strain gauges |
30 |
| 148/DIG.16 |
Catalyst |
28 |
| 148/DIG.160 |
Superlattice |
51 |
| 148/DIG.161 |
Tapered edges |
39 |
| 148/DIG.162 |
Testing steps |
30 |
| 148/DIG.163 |
Thick-thin oxides |
38 |
| 148/DIG.164 |
Three dimensional processing |
53 |
| 148/DIG.165 |
Transmutation doping |
17 |
| 148/DIG.166 |
Traveling solvent method |
3 |
| 148/DIG.167 |
Two diffusions in one hole |
15 |
| 148/DIG.168 |
V-grooves |
43 |
| 148/DIG.169 |
Vacuum deposition (includes molecular beam epitaxy |
113 |
| 148/DIG.17 |
Clean surfaces |
94 |
| 148/DIG.170 |
Vapor-liquid-solid |
4 |
| 148/DIG.171 |
Varistor |
1 |
| 148/DIG.172 |
Vidicons |
6 |
| 148/DIG.173 |
Washed emitter |
2 |
| 148/DIG.174 |
Zener diodes |
13 |
| 148/DIG.18 |
Compensation doping |
44 |
| 148/DIG.19 |
Contacts of silicides |
123 |
| 148/DIG.2 |
Amphoteric doping |
4 |
| 148/DIG.20 |
Contacts, special |
180 |
| 148/DIG.21 |
Continuous process |
6 |
| 148/DIG.22 |
Controlled atmosphere |
15 |
| 148/DIG.23 |
Deep level dopants |
23 |
| 148/DIG.24 |
Defect control-gettering and annealing |
74 |
| 148/DIG.25 |
Deposition multi-step |
84 |
| 148/DIG.26 |
Deposition thru hole in mask |
135 |
| 148/DIG.27 |
Dichlorosilane |
11 |
| 148/DIG.28 |
Dicing |
76 |
| 148/DIG.29 |
Differential crystal growth rates |
12 |
| 148/DIG.3 |
Anneal |
142 |
| 148/DIG.30 |
Diffusion |
15 |
| 148/DIG.31 |
Diffusion at an edge |
14 |
| 148/DIG.32 |
Diffusion length |
4 |
| 148/DIG.33 |
Diffusion of aluminum |
30 |
| 148/DIG.34 |
Diffusion of boron or silicon |
18 |
| 148/DIG.35 |
Diffusion thru a layer |
41 |
| 148/DIG.36 |
Diffusion, nonselective |
8 |
| 148/DIG.37 |
Diffusion-deposition |
46 |
| 148/DIG.38 |
Diffusions-staged |
17 |
| 148/DIG.39 |
Displace p-n junction |
12 |
| 148/DIG.4 |
Annealing, incoherent light |
35 |
| 148/DIG.40 |
Dopants, special |
37 |
| 148/DIG.41 |
Doping control in crystal growth |
38 |
| 148/DIG.42 |
Doping, graded, for tapered etching |
7 |
| 148/DIG.43 |
Dual dielectric |
75 |
| 148/DIG.44 |
Edge diffusion under mask |
7 |
| 148/DIG.45 |
Electric field |
25 |
| 148/DIG.46 |
Electron beam treatment of devices |
33 |
| 148/DIG.47 |
Emitter dip |
2 |
| 148/DIG.48 |
Energy beam assisted epi growth |
39 |
| 148/DIG.49 |
Equivalence and options |
14 |
| 148/DIG.5 |
Antimonides of gallium or indium |
13 |
| 148/DIG.50 |
Etch and refill |
362 |
| 148/DIG.51 |
Etching |
202 |
| 148/DIG.52 |
Face to face deposition |
2 |
| 148/DIG.53 |
Field effect transistors fets |
107 |
| 148/DIG.54 |
Flat sheets-substrates |
15 |
| 148/DIG.55 |
Fuse |
90 |
| 148/DIG.56 |
Gallium arsenide |
62 |
| 148/DIG.57 |
Gas flow control |
26 |
| 148/DIG.58 |
Ge germanium |
30 |
| 148/DIG.59 |
Germanium on silicon or ge-si on iii-v |
42 |
| 148/DIG.6 |
Apparatus |
43 |
| 148/DIG.60 |
Gettering |
75 |
| 148/DIG.61 |
Gettering-armorphous layers |
42 |
| 148/DIG.62 |
Gold diffusion |
10 |
| 148/DIG.63 |
Gp ii-iv-vi compounds |
20 |
| 148/DIG.64 |
Gp ii-vi compounds |
74 |
| 148/DIG.65 |
Gp iii-v (generic) compounds-processing |
118 |
| 148/DIG.66 |
Gp iii-v liquid phase epitaxy |
20 |
| 148/DIG.67 |
Graded energy gap |
43 |
| 148/DIG.68 |
Graphite masking |
4 |
| 148/DIG.69 |
Green sheets |
3 |
| 148/DIG.7 |
Autodoping |
24 |
| 148/DIG.70 |
Guard rings and cmos |
37 |
| 148/DIG.71 |
Heating, selective |
43 |
| 148/DIG.72 |
Heterojunctions |
253 |
| 148/DIG.73 |
Hollow body |
18 |
| 148/DIG.74 |
Horizontal melt solidification |
2 |
| 148/DIG.75 |
Imide resists |
8 |
| 148/DIG.76 |
Implant |
8 |
| 148/DIG.77 |
Implantation of silicon on sapphire |
25 |
| 148/DIG.78 |
Impurity redistribution by oxidation |
2 |
| 148/DIG.79 |
Inert carrier gas |
7 |
| 148/DIG.8 |
Bi-level fabrication |
3 |
| 148/DIG.80 |
Infra-red |
19 |
| 148/DIG.81 |
Insulators |
18 |
| 148/DIG.82 |
Ion implantation fets/coms |
127 |
| 148/DIG.83 |
Ion implantation, general |
38 |
| 148/DIG.84 |
Ion implantation of compound devices |
114 |
| 148/DIG.85 |
Isolated-integrated |
194 |
| 148/DIG.86 |
Isolated zones |
21 |
| 148/DIG.87 |
I2l integrated injection logic |
27 |
| 148/DIG.88 |
J-fet (junction field effect transistor) |
53 |
| 148/DIG.89 |
Josephson devices |
6 |
| 148/DIG.9 |
Bi-mos |
144 |
| 148/DIG.90 |
Laser anneal |
83 |
| 148/DIG.91 |
Laser beam processing of fets |
55 |
| 148/DIG.92 |
Laser beam processing-diodes or transistor |
39 |
| 148/DIG.93 |
Laser beam treatment in general |
173 |
| 148/DIG.94 |
Laser beam treatment of compound devices |
35 |
| 148/DIG.95 |
Laser devices |
152 |
| 148/DIG.96 |
Lateral transistor |
30 |
| 148/DIG.97 |
Lattice strain and defects |
80 |
| 148/DIG.98 |
Layer conversion |
5 |
| 148/DIG.99 |
Led, multicolor |
36 |
