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Class Information
Number: 148/33
Name: Metal treatment > Barrier layer stock material, p-n type
Description: Electrically semiconductive stock which is essentially homogeneous and has at least two contiguous layers differing in the number of unbound electrons and/or differing in energy gap levels, which exhibit a junction between the layers.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7482068 |
Lightly doped silicon carbide wafer and use thereof in high power devices |
Jan. 27, 2009 |
| 7344604 |
LED and a lighting apparatus using the LED |
Mar. 18, 2008 |
| 7220324 |
Technique for the growth of planar semi-polar gallium nitride |
May. 22, 2007 |
| 7186302 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
Mar. 6, 2007 |
| 7118934 |
Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate |
Oct. 10, 2006 |
| 7101444 |
Defect-free semiconductor templates for epitaxial growth |
Sep. 5, 2006 |
| 7011717 |
Method for heat treatment of silicon wafers and silicon wafer |
Mar. 14, 2006 |
| 6997776 |
Process for producing a semiconductor wafer |
Feb. 14, 2006 |
| 6924240 |
Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device |
Aug. 2, 2005 |
| 6884303 |
Process of thinning and blunting semiconductor wafer edge and resulting wafer |
Apr. 26, 2005 |
| 6855996 |
Electronic device substrate structure and electronic device |
Feb. 15, 2005 |
| 6525402 |
Semiconductor wafer, method of manufacturing the same and semiconductor device |
Feb. 25, 2003 |
| 6461447 |
Substrate for epitaxial growth |
Oct. 8, 2002 |
| 6458688 |
Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer |
Oct. 1, 2002 |
| 6440870 |
Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures |
Aug. 27, 2002 |
| 6348261 |
Silicon wafer |
Feb. 19, 2002 |
| 6344092 |
Epitaxial semiconductor substrate, manufacturing method thereof, manufacturing method of semiconductor device and manufacturing method of solid-state imaging device |
Feb. 5, 2002 |
| 6306730 |
Method of fabricating an SOI wafer and SOI wafer fabricated by the method |
Oct. 23, 2001 |
| 6297522 |
Highly uniform silicon carbide epitaxial layers |
Oct. 2, 2001 |
| 6261928 |
Producing microstructures or nanostructures on a support |
Jul. 17, 2001 |
| 6221738 |
Substrate and production method thereof |
Apr. 24, 2001 |
| 6214712 |
Method of physical vapor deposition of metal oxides on semiconductors |
Apr. 10, 2001 |
| 6201262 |
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
Mar. 13, 2001 |
| 6193813 |
Utilization of SiH4 soak and purge in deposition processes |
Feb. 27, 2001 |
| 6191009 |
Method for producing silicon single crystal wafer and silicon single crystal wafer |
Feb. 20, 2001 |
| 6162708 |
Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer |
Dec. 19, 2000 |
| 6103019 |
Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces |
Aug. 15, 2000 |
| 6045626 |
Substrate structures for electronic devices |
Apr. 4, 2000 |
| 5997659 |
Method of treatment of devices based on semiconductor and dielectric materials |
Dec. 7, 1999 |
| 5981400 |
Compliant universal substrate for epitaxial growth |
Nov. 9, 1999 |
| 5891242 |
Apparatus and method for determining an epitaxial layer thickness and transition width |
Apr. 6, 1999 |
| 5866226 |
Polishing agent used for polishing semiconductor wafers and polishing method using the same |
Feb. 2, 1999 |
| 5785769 |
Substrate for thin silicon solar cells |
Jul. 28, 1998 |
| 5782997 |
Aluminum metallization for SiGe devices |
Jul. 21, 1998 |
| 5731626 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby |
Mar. 24, 1998 |
| 5728231 |
Precursor for semiconductor thin films and method for producing semiconductor thin films |
Mar. 17, 1998 |
| 5714014 |
Semiconductor heterojunction material |
Feb. 3, 1998 |
| 5679153 |
Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
Oct. 21, 1997 |
| 5677565 |
Monocrystalline compound semiconductor wafer including non-monocrystalline peripheral region |
Oct. 14, 1997 |
| 5668023 |
Composition for off-axis growth sites on non-polar substrates |
Sep. 16, 1997 |
| 5665176 |
n-Type thermoelectric materials |
Sep. 9, 1997 |
| 5611955 |
High resistivity silicon carbide substrates for high power microwave devices |
Mar. 18, 1997 |
| 5587614 |
Microplanarization of rough electrodes by thin amorphous layers |
Dec. 24, 1996 |
| 5571612 |
Anisotropic nanophase composite material and method of producing same |
Nov. 5, 1996 |
| 5539245 |
Semiconductor substrate having a gettering layer |
Jul. 23, 1996 |
| 5534079 |
Supersaturated rare earth doped semiconductor layers formed by chemical vapor deposition |
Jul. 9, 1996 |
| 5482003 |
Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process |
Jan. 9, 1996 |
| 5466303 |
Semiconductor device and manufacturing method therefor |
Nov. 14, 1995 |
| 5456765 |
Epitaxial wafer of gallium arsenide phosphide |
Oct. 10, 1995 |
| 5439575 |
Hybrid method for depositing semi-conductive materials |
Aug. 8, 1995 |
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