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Class Information
Number: 148/33.6
Name: Metal treatment > Barrier layer stock material, p-n type > Having at least three contiguous layers of semiconductive material > Including an alloy layer having named impurities
Description: Stock including at least one alloyed layer of semiconductive material having named impurities.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7482068 |
Lightly doped silicon carbide wafer and use thereof in high power devices |
Jan. 27, 2009 |
| 5714014 |
Semiconductor heterojunction material |
Feb. 3, 1998 |
| 5647917 |
Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
Jul. 15, 1997 |
| 5458085 |
Magnesium-doping in III-V compound semiconductor |
Oct. 17, 1995 |
| 5441913 |
Process of making a semiconductor epitaxial substrate |
Aug. 15, 1995 |
| 5364468 |
Method for the growth of epitaxial metal-insulator-metal-semiconductor structures |
Nov. 15, 1994 |
| 5314547 |
Rare earth slab doping of group III-V compounds |
May. 24, 1994 |
| 5254507 |
Semi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same |
Oct. 19, 1993 |
| 5173127 |
Semi-insulating INP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same |
Dec. 22, 1992 |
| 5089082 |
Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom |
Feb. 18, 1992 |
| 4944811 |
Material for light emitting element and method for crystal growth thereof |
Jul. 31, 1990 |
| 4900373 |
Sensitization pretreatment of Pb-salt epitaxial films for schottky diodes by sulfur vapor exposure |
Feb. 13, 1990 |
| 4857270 |
Process for manufacturing silicon-germanium alloys |
Aug. 15, 1989 |
| 4843031 |
Method of fabricating compound semiconductor laser using selective irradiation |
Jun. 27, 1989 |
| 4793872 |
III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices |
Dec. 27, 1988 |
| 4789421 |
Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal |
Dec. 6, 1988 |
| 4549912 |
Anode and cathode connections for the practice of electromigration |
Oct. 29, 1985 |
| 4502207 |
Wiring material for semiconductor device and method for forming wiring pattern therewith |
Mar. 5, 1985 |
| 4492810 |
Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices |
Jan. 8, 1985 |
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