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Class Information
Number: 148/33.5
Name: Metal treatment > Barrier layer stock material, p-n type > Having at least three contiguous layers of semiconductive material
Description: Stock comprising three or more contiguous layers of semiconductive material.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7790574 |
Boron diffusion in silicon devices |
Sep. 7, 2010 |
| 7344604 |
LED and a lighting apparatus using the LED |
Mar. 18, 2008 |
| 7097718 |
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects |
Aug. 29, 2006 |
| 6930026 |
Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
Aug. 16, 2005 |
| 6858094 |
Silicon wafer and silicon epitaxial wafer and production methods therefor |
Feb. 22, 2005 |
| 6645836 |
Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
Nov. 11, 2003 |
| 6558802 |
Silicon-on-silicon hybrid wafer assembly |
May. 6, 2003 |
| 6533874 |
GaN-based devices using thick (Ga, Al, In)N base layers |
Mar. 18, 2003 |
| 6294478 |
Fabrication process for a semiconductor substrate |
Sep. 25, 2001 |
| 6284039 |
Epitaxial silicon wafers substantially free of grown-in defects |
Sep. 4, 2001 |
| 6228181 |
Making epitaxial semiconductor device |
May. 8, 2001 |
| 6221776 |
Anti-reflective coating used as a disposable etch stop |
Apr. 24, 2001 |
| 6059895 |
Strained Si/SiGe layers on insulator |
May. 9, 2000 |
| 6048411 |
Silicon-on-silicon hybrid wafer assembly |
Apr. 11, 2000 |
| 6033490 |
Growth of GaN layers on quartz substrates |
Mar. 7, 2000 |
| 5834361 |
Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same |
Nov. 10, 1998 |
| 5714014 |
Semiconductor heterojunction material |
Feb. 3, 1998 |
| 5659188 |
Capped anneal |
Aug. 19, 1997 |
| 5647917 |
Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
Jul. 15, 1997 |
| 5628834 |
Surfactant-enhanced epitaxy |
May. 13, 1997 |
| 5540786 |
Light emitting material |
Jul. 30, 1996 |
| 5529640 |
Epitaxial metal-insulator-metal-semiconductor structures |
Jun. 25, 1996 |
| 5443661 |
SOI (silicon on insulator) substrate with enhanced gettering effects |
Aug. 22, 1995 |
| 5441913 |
Process of making a semiconductor epitaxial substrate |
Aug. 15, 1995 |
| 5432121 |
Method for fabricating a multilayer epitaxial structure |
Jul. 11, 1995 |
| 5419786 |
Semiconductor substrate for bipolar element |
May. 30, 1995 |
| 5405802 |
Process of fabricating a semiconductor substrate |
Apr. 11, 1995 |
| 5399206 |
Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
Mar. 21, 1995 |
| 5372658 |
Disordered crystalline semiconductor |
Dec. 13, 1994 |
| 5364468 |
Method for the growth of epitaxial metal-insulator-metal-semiconductor structures |
Nov. 15, 1994 |
| 5324685 |
Method for fabricating a multilayer epitaxial structure |
Jun. 28, 1994 |
| 5221367 |
Strained defect-free epitaxial mismatched heterostructures and method of fabrication |
Jun. 22, 1993 |
| 5183778 |
Method of producing a semiconductor device |
Feb. 2, 1993 |
| 5141564 |
Mixed ternary heterojunction solar cell |
Aug. 25, 1992 |
| 5076860 |
AlGaN compound semiconductor material |
Dec. 31, 1991 |
| 5057450 |
Method for fabricating silicon-on-insulator structures |
Oct. 15, 1991 |
| 5021103 |
Method of forming microcrystalline silicon-containing silicon carbide film |
Jun. 4, 1991 |
| 5021360 |
Method of farbicating highly lattice mismatched quantum well structures |
Jun. 4, 1991 |
| 5011550 |
Laminated structure of compound semiconductors |
Apr. 30, 1991 |
| 4946801 |
Epitaxial wafer |
Aug. 7, 1990 |
| 4944811 |
Material for light emitting element and method for crystal growth thereof |
Jul. 31, 1990 |
| 4935386 |
Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating |
Jun. 19, 1990 |
| 4927471 |
Semiconductor substrate comprising wafer substrate and compound semiconductor layer |
May. 22, 1990 |
| 4911765 |
Method for fabricating a monolithic integration of a laser diode and a wide aperture photo diode |
Mar. 27, 1990 |
| 4902356 |
Epitaxial substrate for high-intensity led, and method of manufacturing same |
Feb. 20, 1990 |
| 4900372 |
III-V on Si heterostructure using a thermal strain layer |
Feb. 13, 1990 |
| 4897149 |
Method of fabricating single-crystal substrates of silicon carbide |
Jan. 30, 1990 |
| 4837177 |
Method of making bipolar semiconductor device having a conductive recombination layer |
Jun. 6, 1989 |
| 4810672 |
Method of securing electronic components to a substrate |
Mar. 7, 1989 |
| 4804639 |
Method of making a DH laser with strained layers by MBE |
Feb. 14, 1989 |
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