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Class Information
Number: 148/33.5
Name: Metal treatment > Barrier layer stock material, p-n type > Having at least three contiguous layers of semiconductive material
Description: Stock comprising three or more contiguous layers of semiconductive material.










Sub-classes under this class:

Class Number Class Name Patents
148/33.6 Including an alloy layer having named impurities 21


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7790574 Boron diffusion in silicon devices Sep. 7, 2010
7344604 LED and a lighting apparatus using the LED Mar. 18, 2008
7097718 Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects Aug. 29, 2006
6930026 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon Aug. 16, 2005
6858094 Silicon wafer and silicon epitaxial wafer and production methods therefor Feb. 22, 2005
6645836 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon Nov. 11, 2003
6558802 Silicon-on-silicon hybrid wafer assembly May. 6, 2003
6533874 GaN-based devices using thick (Ga, Al, In)N base layers Mar. 18, 2003
6294478 Fabrication process for a semiconductor substrate Sep. 25, 2001
6284039 Epitaxial silicon wafers substantially free of grown-in defects Sep. 4, 2001
6228181 Making epitaxial semiconductor device May. 8, 2001
6221776 Anti-reflective coating used as a disposable etch stop Apr. 24, 2001
6059895 Strained Si/SiGe layers on insulator May. 9, 2000
6048411 Silicon-on-silicon hybrid wafer assembly Apr. 11, 2000
6033490 Growth of GaN layers on quartz substrates Mar. 7, 2000
5834361 Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same Nov. 10, 1998
5714014 Semiconductor heterojunction material Feb. 3, 1998
5659188 Capped anneal Aug. 19, 1997
5647917 Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth Jul. 15, 1997
5628834 Surfactant-enhanced epitaxy May. 13, 1997
5540786 Light emitting material Jul. 30, 1996
5529640 Epitaxial metal-insulator-metal-semiconductor structures Jun. 25, 1996
5443661 SOI (silicon on insulator) substrate with enhanced gettering effects Aug. 22, 1995
5441913 Process of making a semiconductor epitaxial substrate Aug. 15, 1995
5432121 Method for fabricating a multilayer epitaxial structure Jul. 11, 1995
5419786 Semiconductor substrate for bipolar element May. 30, 1995
5405802 Process of fabricating a semiconductor substrate Apr. 11, 1995
5399206 Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates Mar. 21, 1995
5372658 Disordered crystalline semiconductor Dec. 13, 1994
5364468 Method for the growth of epitaxial metal-insulator-metal-semiconductor structures Nov. 15, 1994
5324685 Method for fabricating a multilayer epitaxial structure Jun. 28, 1994
5221367 Strained defect-free epitaxial mismatched heterostructures and method of fabrication Jun. 22, 1993
5183778 Method of producing a semiconductor device Feb. 2, 1993
5141564 Mixed ternary heterojunction solar cell Aug. 25, 1992
5076860 AlGaN compound semiconductor material Dec. 31, 1991
5057450 Method for fabricating silicon-on-insulator structures Oct. 15, 1991
5021103 Method of forming microcrystalline silicon-containing silicon carbide film Jun. 4, 1991
5021360 Method of farbicating highly lattice mismatched quantum well structures Jun. 4, 1991
5011550 Laminated structure of compound semiconductors Apr. 30, 1991
4946801 Epitaxial wafer Aug. 7, 1990
4944811 Material for light emitting element and method for crystal growth thereof Jul. 31, 1990
4935386 Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating Jun. 19, 1990
4927471 Semiconductor substrate comprising wafer substrate and compound semiconductor layer May. 22, 1990
4911765 Method for fabricating a monolithic integration of a laser diode and a wide aperture photo diode Mar. 27, 1990
4902356 Epitaxial substrate for high-intensity led, and method of manufacturing same Feb. 20, 1990
4900372 III-V on Si heterostructure using a thermal strain layer Feb. 13, 1990
4897149 Method of fabricating single-crystal substrates of silicon carbide Jan. 30, 1990
4837177 Method of making bipolar semiconductor device having a conductive recombination layer Jun. 6, 1989
4810672 Method of securing electronic components to a substrate Mar. 7, 1989
4804639 Method of making a DH laser with strained layers by MBE Feb. 14, 1989

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