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Class Information
Number: 148/33.4
Name: Metal treatment > Barrier layer stock material, p-n type > With contiguous layers of different semiconductive material
Description: Stock in which the material in at least two contiguous layers, which are considered the semiconductors, is of different compositions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7344604 |
LED and a lighting apparatus using the LED |
Mar. 18, 2008 |
| 7235427 |
Method for treating substrates for microelectronics and substrates obtained by said method |
Jun. 26, 2007 |
| 7063751 |
Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners |
Jun. 20, 2006 |
| 7041178 |
Method for low temperature bonding and bonded structure |
May. 9, 2006 |
| 6930026 |
Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
Aug. 16, 2005 |
| 6855996 |
Electronic device substrate structure and electronic device |
Feb. 15, 2005 |
| 6730987 |
Compound semiconductor device, production method thereof, light-emitting device and transistor |
May. 4, 2004 |
| 6645836 |
Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
Nov. 11, 2003 |
| 6589362 |
Zinc oxide semiconductor member formed on silicon substrate |
Jul. 8, 2003 |
| 6583034 |
Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure |
Jun. 24, 2003 |
| 6534332 |
Method of growing GaN films with a low density of structural defects using an interlayer |
Mar. 18, 2003 |
| 6429098 |
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained |
Aug. 6, 2002 |
| 6319333 |
Silicon-on-insulator islands |
Nov. 20, 2001 |
| 6270587 |
Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same |
Aug. 7, 2001 |
| 6265237 |
In-wafer testing of DFB semiconductor lasers |
Jul. 24, 2001 |
| 6245161 |
Economical silicon-on-silicon hybrid wafer assembly |
Jun. 12, 2001 |
| 6187687 |
Minimization of line width variation in photolithography |
Feb. 13, 2001 |
| 6171973 |
Process for etching the gate in MOS technology using a SiON-based hard mask |
Jan. 9, 2001 |
| 6140209 |
Process for forming an SOI substrate |
Oct. 31, 2000 |
| 6103019 |
Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces |
Aug. 15, 2000 |
| 6059895 |
Strained Si/SiGe layers on insulator |
May. 9, 2000 |
| 6045626 |
Substrate structures for electronic devices |
Apr. 4, 2000 |
| 6033489 |
Semiconductor substrate and method of making same |
Mar. 7, 2000 |
| 6033490 |
Growth of GaN layers on quartz substrates |
Mar. 7, 2000 |
| 5834361 |
Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same |
Nov. 10, 1998 |
| 5782997 |
Aluminum metallization for SiGe devices |
Jul. 21, 1998 |
| 5714014 |
Semiconductor heterojunction material |
Feb. 3, 1998 |
| 5705423 |
Epitaxial wafer |
Jan. 6, 1998 |
| 5685946 |
Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices |
Nov. 11, 1997 |
| 5663583 |
Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate |
Sep. 2, 1997 |
| 5658834 |
Forming B.sub.1-x C.sub.x semiconductor layers by chemical vapor deposition |
Aug. 19, 1997 |
| 5647917 |
Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
Jul. 15, 1997 |
| 5645684 |
Multilayer high vertical aspect ratio thin film structures |
Jul. 8, 1997 |
| 5628834 |
Surfactant-enhanced epitaxy |
May. 13, 1997 |
| 5578162 |
Integrated composite semiconductor devices and method for manufacture thereof |
Nov. 26, 1996 |
| 5540786 |
Light emitting material |
Jul. 30, 1996 |
| 5529640 |
Epitaxial metal-insulator-metal-semiconductor structures |
Jun. 25, 1996 |
| 5456765 |
Epitaxial wafer of gallium arsenide phosphide |
Oct. 10, 1995 |
| 5445897 |
Epitaxial wafer and process for producing the same |
Aug. 29, 1995 |
| 5441913 |
Process of making a semiconductor epitaxial substrate |
Aug. 15, 1995 |
| 5421910 |
Intermetallic compound semiconductor thin film |
Jun. 6, 1995 |
| 5399206 |
Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
Mar. 21, 1995 |
| 5397429 |
Method of manufacturing photoluminescing porous silicon using spark erosion |
Mar. 14, 1995 |
| 5376579 |
Schemes to form silicon-on-diamond structure |
Dec. 27, 1994 |
| 5373171 |
Thin film single crystal substrate |
Dec. 13, 1994 |
| 5372970 |
Method for epitaxially growing a II-VI compound semiconductor |
Dec. 13, 1994 |
| 5372658 |
Disordered crystalline semiconductor |
Dec. 13, 1994 |
| 5364468 |
Method for the growth of epitaxial metal-insulator-metal-semiconductor structures |
Nov. 15, 1994 |
| 5314547 |
Rare earth slab doping of group III-V compounds |
May. 24, 1994 |
| 5309000 |
Diamond films with heat-resisting ohmic electrodes |
May. 3, 1994 |
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