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Class Information
Number: 148/33.3
Name: Metal treatment > Barrier layer stock material, p-n type > With non-semiconductive coating thereon
Description: Stock combined with a nonsemiconductive coating.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7578891 |
Adhesive bonding sheet, semiconductor device using the same, and method for manufacturing such semiconductor device |
Aug. 25, 2009 |
| 7446923 |
Semiconductor, functional device, electrochromic device, optical device, and image-taking unit |
Nov. 4, 2008 |
| 7030451 |
Method and apparatus for performing nickel salicidation |
Apr. 18, 2006 |
| 7018920 |
Composite sacrificial material |
Mar. 28, 2006 |
| 7018484 |
Semiconductor-on-insulator silicon wafer and method of formation |
Mar. 28, 2006 |
| 6905557 |
Three dimensional integrated device |
Jun. 14, 2005 |
| 6864579 |
Carrier with a metal area and at least one chip configured on the metal area |
Mar. 8, 2005 |
| 6833570 |
Structure comprising an insulated part in a solid substrate and method for producing same |
Dec. 21, 2004 |
| 6812529 |
Suppression of cross diffusion and gate depletion |
Nov. 2, 2004 |
| 6786978 |
Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching |
Sep. 7, 2004 |
| 6565649 |
Epitaxial wafer substantially free of grown-in defects |
May. 20, 2003 |
| 6551944 |
Process for manufacturing a semiconductor material wafer comprising single-Crystal regions separated by insulating material regions |
Apr. 22, 2003 |
| 6552395 |
Higher thermal conductivity glass for SOI heat removal |
Apr. 22, 2003 |
| 6340642 |
Process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity |
Jan. 22, 2002 |
| 6340535 |
Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device |
Jan. 22, 2002 |
| 6322634 |
Shallow trench isolation structure without corner exposure |
Nov. 27, 2001 |
| 6307225 |
Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device |
Oct. 23, 2001 |
| 6294478 |
Fabrication process for a semiconductor substrate |
Sep. 25, 2001 |
| 6238482 |
Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer |
May. 29, 2001 |
| 6193813 |
Utilization of SiH4 soak and purge in deposition processes |
Feb. 27, 2001 |
| 6139647 |
Selective removal of vertical portions of a film |
Oct. 31, 2000 |
| 6114052 |
Ingot plate made of thermoelectric material, rectangular bar cut from the ingot plate, and process of fabricating the ingot plate |
Sep. 5, 2000 |
| 6107167 |
Simplified method of patterning polysilicon gate in a semiconductor device |
Aug. 22, 2000 |
| 6103020 |
Dual-masked field isolation |
Aug. 15, 2000 |
| 6066570 |
Method and apparatus for preventing formation of black silicon on edges of wafers |
May. 23, 2000 |
| 6051478 |
Method of enhancing trench edge oxide quality |
Apr. 18, 2000 |
| 6045625 |
Buried oxide with a thermal expansion matching layer for SOI |
Apr. 4, 2000 |
| 6004406 |
Silicon on insulating substrate |
Dec. 21, 1999 |
| 5948162 |
Method for forming SOI structure |
Sep. 7, 1999 |
| 5909626 |
SOI substrate and fabrication process therefor |
Jun. 1, 1999 |
| 5900072 |
Insulating layer structure for semiconductor device |
May. 4, 1999 |
| 5894037 |
Silicon semiconductor substrate and method of fabricating the same |
Apr. 13, 1999 |
| 5891265 |
SOI substrate having monocrystal silicon layer on insulating film |
Apr. 6, 1999 |
| 5868870 |
Isolation structure of a shallow semiconductor device trench |
Feb. 9, 1999 |
| 5855693 |
Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication |
Jan. 5, 1999 |
| 5782996 |
Graded compositions of II-VI semiconductors and devices utilizing same |
Jul. 21, 1998 |
| 5782997 |
Aluminum metallization for SiGe devices |
Jul. 21, 1998 |
| 5780346 |
N.sub.2 O nitrided-oxide trench sidewalls and method of making isolation structure |
Jul. 14, 1998 |
| 5733383 |
Spacers used to form isolation trenches with improved corners |
Mar. 31, 1998 |
| 5728231 |
Precursor for semiconductor thin films and method for producing semiconductor thin films |
Mar. 17, 1998 |
| 5721145 |
Method of making a semiconductor substrate having gettering effect |
Feb. 24, 1998 |
| 5698063 |
Intermediate workpiece employing a mask for etching an aperture aligned with the crystal planes in the workpiece substrate |
Dec. 16, 1997 |
| 5658834 |
Forming B.sub.1-x C.sub.x semiconductor layers by chemical vapor deposition |
Aug. 19, 1997 |
| 5610104 |
Method of providing a mark for identification on a silicon surface |
Mar. 11, 1997 |
| 5595600 |
Low temperature selective growth of silicon or silicon alloys |
Jan. 21, 1997 |
| 5509974 |
Etch control seal for dissolved wafer process |
Apr. 23, 1996 |
| 5478408 |
SOI substrate and manufacturing method therefor |
Dec. 26, 1995 |
| 5470398 |
Dielectric thin film and method of manufacturing same |
Nov. 28, 1995 |
| 5443661 |
SOI (silicon on insulator) substrate with enhanced gettering effects |
Aug. 22, 1995 |
| 5437739 |
Etch control seal for dissolved wafer micromachining process |
Aug. 1, 1995 |
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