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Class Information
Number: 148/33.2
Name: Metal treatment > Barrier layer stock material, p-n type > With recess, void, dislocation, grain boundaries or channel openings
Description: Stock in which at least one layer contains voids, dislocations, grain boundaries or channel openings.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7534310 |
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
May. 19, 2009 |
| 7063751 |
Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners |
Jun. 20, 2006 |
| 6822332 |
Fine line circuitization |
Nov. 23, 2004 |
| 6746939 |
Production method for solid imaging device |
Jun. 8, 2004 |
| 6693342 |
Thin microelectronic substrates and methods of manufacture |
Feb. 17, 2004 |
| 6649989 |
Micromechanical diaphragm |
Nov. 18, 2003 |
| 6630410 |
Self-aligned PECVD etch mask |
Oct. 7, 2003 |
| 6562725 |
Dual damascene structure employing nitrogenated silicon carbide and non-nitrogenated silicon carbide etch stop layers |
May. 13, 2003 |
| 6551944 |
Process for manufacturing a semiconductor material wafer comprising single-Crystal regions separated by insulating material regions |
Apr. 22, 2003 |
| 6544804 |
Semiconductor wafer having identification indication and method of manufacturing the same |
Apr. 8, 2003 |
| 6541753 |
Semiconductor energy detector having reinforcement |
Apr. 1, 2003 |
| 6518494 |
Silicon structure, method for producing the same, and solar battery using the silicon structure |
Feb. 11, 2003 |
| 6516528 |
System and method to determine line edge roughness and/or linewidth |
Feb. 11, 2003 |
| 6478883 |
Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them |
Nov. 12, 2002 |
| 6420792 |
Semiconductor wafer edge marking |
Jul. 16, 2002 |
| 6399959 |
Thin film transistor with reduced metal impurities |
Jun. 4, 2002 |
| 6383941 |
Method of etching organic ARCs in patterns having variable spacings |
May. 7, 2002 |
| 6365491 |
Method for forming a uniform network of semiconductor islands on an insulating substrate |
Apr. 2, 2002 |
| 6361619 |
Thermally annealed wafers having improved internal gettering |
Mar. 26, 2002 |
| 6319333 |
Silicon-on-insulator islands |
Nov. 20, 2001 |
| 6294478 |
Fabrication process for a semiconductor substrate |
Sep. 25, 2001 |
| 6261382 |
Wafer marking |
Jul. 17, 2001 |
| 6191010 |
Process for preparing an ideal oxygen precipitating silicon wafer |
Feb. 20, 2001 |
| 6187600 |
Silicon substrate evaluation method and semiconductor device manufacturing method |
Feb. 13, 2001 |
| 6187110 |
Device for patterned films |
Feb. 13, 2001 |
| 6111191 |
Columnar-grained polycrystalline solar cell substrate and improved method of manufacture |
Aug. 29, 2000 |
| 6103019 |
Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces |
Aug. 15, 2000 |
| 6083324 |
Gettering technique for silicon-on-insulator wafers |
Jul. 4, 2000 |
| 6069089 |
Defective semiconductor redistribution labeling system |
May. 30, 2000 |
| 6033489 |
Semiconductor substrate and method of making same |
Mar. 7, 2000 |
| 6010579 |
Reusable substrate for thin film separation |
Jan. 4, 2000 |
| 6004405 |
Wafer having a laser mark on chamfered edge |
Dec. 21, 1999 |
| 5890269 |
Semiconductor wafer, handling apparatus, and method |
Apr. 6, 1999 |
| RE36156 |
Columnar-grained polycrystalline solar cell and process of manufacture |
Mar. 23, 1999 |
| 5872074 |
Leached nanocrystalline materials process for manufacture of the same, and use thereof in the energetic field |
Feb. 16, 1999 |
| 5786267 |
Method of making a semiconductor wafer with alignment marks |
Jul. 28, 1998 |
| 5782996 |
Graded compositions of II-VI semiconductors and devices utilizing same |
Jul. 21, 1998 |
| 5763363 |
Nanocrystalline Ni-based alloys and use thereof for the transportation and storage of hydrogen |
Jun. 9, 1998 |
| 5759087 |
Method for inducing damage for gettering to single crystal silicon wafer |
Jun. 2, 1998 |
| 5759898 |
Production of substrate for tensilely strained semiconductor |
Jun. 2, 1998 |
| 5645684 |
Multilayer high vertical aspect ratio thin film structures |
Jul. 8, 1997 |
| 5540785 |
Fabrication of defect free silicon on an insulating substrate |
Jul. 30, 1996 |
| 5496416 |
Columnar-grained polycrystalline solar cell and process of manufacture |
Mar. 5, 1996 |
| 5492142 |
Polycrystalline silicon photovoltaic device |
Feb. 20, 1996 |
| 5486237 |
Polysilicon thin film and method of preparing polysilicon thin film and photovoltaic element containing same |
Jan. 23, 1996 |
| 5451269 |
Semiconductor memory device including an improved substrate structure and method of fabricating the same |
Sep. 19, 1995 |
| 5427630 |
Mask material for low temperature selective growth of silicon or silicon alloys |
Jun. 27, 1995 |
| 5419785 |
Intrinsically doped III-A and V-A compounds having precipitates of V-A element |
May. 30, 1995 |
| 5413955 |
Method of bonding silicon wafers at temperatures below 500 degrees centigrade for sensor applications |
May. 9, 1995 |
| 5405454 |
Electrically insulated silicon structure and producing method therefor |
Apr. 11, 1995 |
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