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Class Information
Number: 148/33.1
Name: Metal treatment > Barrier layer stock material, p-n type > With contiguous layer doped to degeneracy
Description: Stock which has two contiguous layers of semiconductive material doped to degeneracy.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7534310 |
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
May. 19, 2009 |
| 7097718 |
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects |
Aug. 29, 2006 |
| 6596095 |
Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof |
Jul. 22, 2003 |
| 6565649 |
Epitaxial wafer substantially free of grown-in defects |
May. 20, 2003 |
| 6521041 |
Etch stop layer system |
Feb. 18, 2003 |
| 6379472 |
Group III-nitride thin films grown using MBE and bismuth |
Apr. 30, 2002 |
| 6284039 |
Epitaxial silicon wafers substantially free of grown-in defects |
Sep. 4, 2001 |
| 6193813 |
Utilization of SiH4 soak and purge in deposition processes |
Feb. 27, 2001 |
| 6059895 |
Strained Si/SiGe layers on insulator |
May. 9, 2000 |
| 6010638 |
Conductive/insulating graded GaAs bulk material |
Jan. 4, 2000 |
| 5891242 |
Apparatus and method for determining an epitaxial layer thickness and transition width |
Apr. 6, 1999 |
| 5782996 |
Graded compositions of II-VI semiconductors and devices utilizing same |
Jul. 21, 1998 |
| 5714014 |
Semiconductor heterojunction material |
Feb. 3, 1998 |
| 5696034 |
Method for producing semiconductor substrate |
Dec. 9, 1997 |
| 5466303 |
Semiconductor device and manufacturing method therefor |
Nov. 14, 1995 |
| 5332451 |
Epitaxially grown compound-semiconductor crystal |
Jul. 26, 1994 |
| 5314547 |
Rare earth slab doping of group III-V compounds |
May. 24, 1994 |
| 5230768 |
Method for the production of SiC single crystals by using a specific substrate crystal orientation |
Jul. 27, 1993 |
| 5141569 |
Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate |
Aug. 25, 1992 |
| 5076860 |
AlGaN compound semiconductor material |
Dec. 31, 1991 |
| 5011549 |
Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon |
Apr. 30, 1991 |
| 4944811 |
Material for light emitting element and method for crystal growth thereof |
Jul. 31, 1990 |
| 4939043 |
Optically transparent electrically conductive semiconductor windows |
Jul. 3, 1990 |
| 4874438 |
Intermetallic compound semiconductor thin film and method of manufacturing same |
Oct. 17, 1989 |
| 4859627 |
Group VI doping of III-V semiconductors during ALE |
Aug. 22, 1989 |
| 4832761 |
Process for manufacturing gallium arsenide monolithic microwave integrated circuits using nonphotosensitive acid resist for handling |
May. 23, 1989 |
| 4804639 |
Method of making a DH laser with strained layers by MBE |
Feb. 14, 1989 |
| 4720309 |
Saturatable absorbant with very short switching times |
Jan. 19, 1988 |
| 4670176 |
Single crystal of compound semiconductor of groups III-V with low dislocation density |
Jun. 2, 1987 |
| 4549912 |
Anode and cathode connections for the practice of electromigration |
Oct. 29, 1985 |
| 4536231 |
Polysilicon thin films of improved electrical uniformity |
Aug. 20, 1985 |
| 4442449 |
Binary germanium-silicon interconnect and electrode structure for integrated circuits |
Apr. 10, 1984 |
| 4394191 |
Stacked polycrystalline silicon film of high and low conductivity layers |
Jul. 19, 1983 |
| 4344803 |
Photo cathode made from composite semiconductor/glass material |
Aug. 17, 1982 |
| 4213801 |
Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers |
Jul. 22, 1980 |
| 4172756 |
Method for the accelerated growth from the gaseous phase of crystals, and products obtained in this manner |
Oct. 30, 1979 |
| 4046609 |
Method of manufacturing photo-diodes utilizing sequential diffusion |
Sep. 6, 1977 |
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