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Class Information
Number: 118/723MR
Name: Coating apparatus > Gas or vapor deposition > With treating means (e.g., jarring) > By creating electric field (e.g., gas activation, plasma, etc.) > Microwave gas energizing means (e.g., 2.45 gigahertz, microwave plasma, etc.) > Producing energized gas remotely located from substrate > With magnet (e.g., electron cyclotron resonance, etc.)
Description:


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
5132105 Materials with diamond-like properties and method and means for manufacturing them Jul. 21, 1992
5125358 Microwave plasma film deposition system Jun. 30, 1992
5111111 Method and apparatus for coupling a microwave source in an electron cyclotron resonance system May. 5, 1992
5099790 Microwave plasma chemical vapor deposition apparatus Mar. 31, 1992
5087857 Plasma generating apparatus and method using modulation system Feb. 11, 1992
5082542 Distributed-array magnetron-plasma processing module and method Jan. 21, 1992
5079481 Plasma-assisted processing magneton with magnetic field adjustment Jan. 7, 1992
5069928 Microwave chemical vapor deposition apparatus and feedback control method Dec. 3, 1991
5045166 Magnetron method and apparatus for producing high density ionic gas discharge Sep. 3, 1991
5038713 Microwave plasma treating apparatus Aug. 13, 1991
5019117 Plasma apparatus May. 28, 1991
5016564 Plasma apparatus May. 21, 1991
4993361 Chemical vapor deposition Feb. 19, 1991
4986214 Thin film forming apparatus Jan. 22, 1991
4982138 Semiconductor wafer treating device utilizing a plasma Jan. 1, 1991
4970435 Plasma processing apparatus Nov. 13, 1990
4960073 Microwave plasma treatment apparatus Oct. 2, 1990
4960071 Thin film forming apparatus Oct. 2, 1990
4957061 Plurality of beam producing means disposed in different longitudinal and lateral directions from each other with respect to a substrate Sep. 18, 1990
4947085 Plasma processor Aug. 7, 1990
4925542 Plasma plating apparatus and method May. 15, 1990
4919783 Apparatus for processing an object by gas plasma with a reduced damage Apr. 24, 1990
4915979 Semiconductor wafer treating device utilizing ECR plasma Apr. 10, 1990
4911812 Plasma treating method and apparatus therefor Mar. 27, 1990
4908492 Microwave plasma production apparatus Mar. 13, 1990
4902934 Plasma apparatus Feb. 20, 1990
4897284 Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method Jan. 30, 1990
4891118 Plasma processing apparatus Jan. 2, 1990
4883686 Method for the high rate plasma deposition of high quality material Nov. 28, 1989
4876983 Plasma operation apparatus Oct. 31, 1989
4842707 Dry process apparatus Jun. 27, 1989
4831963 Plasma processing apparatus May. 23, 1989
4825808 Substrate processing apparatus May. 2, 1989
4727293 Plasma generating apparatus using magnets and method Feb. 23, 1988
4691662 Dual plasma microwave apparatus and method for treating a surface Sep. 8, 1987
4624214 Dry-processing apparatus Nov. 25, 1986
4611121 Magnet apparatus Sep. 9, 1986
4585541 Plasma anodization system Apr. 29, 1986
4543465 Microwave plasma source having improved switching operation from plasma ignition phase to normal ion extraction phase Sep. 24, 1985
4532199 Method of forming amorphous silicon film Jul. 30, 1985
4438368 Plasma treating apparatus Mar. 20, 1984
4430138 Microwave plasma etching apparatus having fan-shaped discharge Feb. 7, 1984
4401054 Plasma deposition apparatus Aug. 30, 1983

1 2 3 4


 
 
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