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Class Information
Number: 118/723IR
Name: Coating apparatus > Gas or vapor deposition > With treating means (e.g., jarring) > By creating electric field (e.g., gas activation, plasma, etc.) > Radio frequency antenna or radio frequency inductive coil discharge means > Producing energized gas remotely located from substrate
Description:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4844775 |
Ion etching and chemical vapour deposition |
Jul. 4, 1989 |
| 4828369 |
Electrochromic device |
May. 9, 1989 |
| 4810935 |
Method and apparatus for producing large volume magnetoplasmas |
Mar. 7, 1989 |
| H566 |
Apparatus and process for deposition of hard carbon films |
Jan. 3, 1989 |
| 4664747 |
Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same |
May. 12, 1987 |
| 4624214 |
Dry-processing apparatus |
Nov. 25, 1986 |
| 4585541 |
Plasma anodization system |
Apr. 29, 1986 |
| 4583492 |
High rate, low temperature silicon deposition system |
Apr. 22, 1986 |
| 4440108 |
Ion beam coating apparatus |
Apr. 3, 1984 |
| 4421592 |
Plasma enhanced deposition of semiconductors |
Dec. 20, 1983 |
| 4368092 |
Apparatus for the etching for semiconductor devices |
Jan. 11, 1983 |
| 4362632 |
Gas discharge apparatus |
Dec. 7, 1982 |
| 4361114 |
Method and apparatus for forming thin film oxide layers using reactive evaporation techniques |
Nov. 30, 1982 |
| 4320716 |
Ultra-high frequency device for depositing thin films on solids |
Mar. 23, 1982 |
| 4051382 |
Activated gas reaction apparatus |
Sep. 27, 1977 |
| 4050408 |
Apparatus for depositing thin layers of materials by reactive spraying in a high-frequency inductive plasma |
Sep. 27, 1977 |
| 4006340 |
Device for the rapid depositing of oxides in thin layers which adhere well to plastic supports |
Feb. 1, 1977 |
| 3954585 |
Synthesis of trifluoromethyl-substituted compounds |
May. 4, 1976 |
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