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Class Information
Number: 118/723IR
Name: Coating apparatus > Gas or vapor deposition > With treating means (e.g., jarring) > By creating electric field (e.g., gas activation, plasma, etc.) > Radio frequency antenna or radio frequency inductive coil discharge means > Producing energized gas remotely located from substrate
Description:


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
5855725 Vacuum processing system and method of removing film deposited on inner face of vacuum vessel in the vacuum processing system Jan. 5, 1999
5851600 Plasma process method and apparatus Dec. 22, 1998
5824158 Chemical vapor deposition using inductively coupled plasma and system therefor Oct. 20, 1998
5810932 Plasma generating apparatus used for fabrication of semiconductor device Sep. 22, 1998
5811022 Inductive plasma reactor Sep. 22, 1998
5803974 Chemical vapor deposition apparatus Sep. 8, 1998
5800619 Vacuum plasma processor having coil with minimum magnetic field in its center Sep. 1, 1998
5759280 Inductively coupled source for deriving substantially uniform plasma flux Jun. 2, 1998
5753320 Process for forming deposited film May. 19, 1998
5753044 RF plasma reactor with hybrid conductor and multi-radius dome ceiling May. 19, 1998
5735960 Apparatus and method to increase gas residence time in a reactor Apr. 7, 1998
5728222 Apparatus for chemical vapor deposition of aluminum oxide Mar. 17, 1998
5716451 Plasma processing apparatus Feb. 10, 1998
5707692 Apparatus and method for processing a base substance using plasma and a magnetic field Jan. 13, 1998
5690781 Plasma processing apparatus for manufacture of semiconductor devices Nov. 25, 1997
5690050 Plasma treating apparatus and plasma treating method Nov. 25, 1997
5685941 Inductively coupled plasma reactor with top electrode for enhancing plasma ignition Nov. 11, 1997
5683539 Inductively coupled RF plasma reactor with floating coil antenna for reduced capacitive coupling Nov. 4, 1997
5683548 Inductively coupled plasma reactor and process Nov. 4, 1997
5681418 Plasma processing with inductive coupling Oct. 28, 1997
5681393 Plasma processing apparatus Oct. 28, 1997
5669975 Plasma producing method and apparatus including an inductively-coupled plasma source Sep. 23, 1997
5630880 Method and apparatus for a large volume plasma processor that can utilize any feedstock material May. 20, 1997
5620523 Apparatus for forming film Apr. 15, 1997
5614055 High density plasma CVD and etching reactor Mar. 25, 1997
5558722 Plasma processing apparatus Sep. 24, 1996
5540800 Inductively coupled high density plasma reactor for plasma assisted materials processing Jul. 30, 1996
5540824 Plasma reactor with multi-section RF coil and isolated conducting lid Jul. 30, 1996
5525159 Plasma process apparatus Jun. 11, 1996
5474642 Apparatus for the treatment of a solid body Dec. 12, 1995
5472507 IC wiring connecting method and apparatus Dec. 5, 1995
5425811 Apparatus for manufacturing a nitrogen containing compound thin film Jun. 20, 1995
5389153 Plasma processing system using surface wave plasma generating apparatus and method Feb. 14, 1995
5378285 Apparatus for forming a diamond-like thin film Jan. 3, 1995
5346578 Induction plasma source Sep. 13, 1994
5180435 Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer Jan. 19, 1993
5154135 Apparatus for forming a deposited film Oct. 13, 1992
5122251 High density plasma deposition and etching apparatus Jun. 16, 1992
5108535 Dry etching apparatus Apr. 28, 1992
5091049 High density plasma deposition and etching apparatus Feb. 25, 1992
5082517 Plasma density controller for semiconductor device processing equipment Jan. 21, 1992
5045166 Magnetron method and apparatus for producing high density ionic gas discharge Sep. 3, 1991
5018479 Remote plasma enhanced CVD method and apparatus for growing an epitaxial semconductor layer May. 28, 1991
4990229 High density plasma deposition and etching apparatus Feb. 5, 1991
4971832 HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V Nov. 20, 1990
4948750 Method and apparatus for producing semiconductor layers composed of amorphous silicon-germanium alloys through glow discharge technique, particularly for solar cells Aug. 14, 1990
4945857 Plasma formation of hydride compounds Aug. 7, 1990
4878989 Chemical beam epitaxy system Nov. 7, 1989
4867952 Cracking traps for process gas components having a condensed phase Sep. 19, 1989
4853250 Process of depositing particulate material on a substrate Aug. 1, 1989

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