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Class Information
Number: 118/723I
Name: Coating apparatus > Gas or vapor deposition > With treating means (e.g., jarring) > By creating electric field (e.g., gas activation, plasma, etc.) > Radio frequency antenna or radio frequency inductive coil discharge means
Description:


Sub-classes under this class:

Class Number Class Name Patents
118/723IR Producing energized gas remotely located from substrate 218


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
6098568 Mixed frequency CVD apparatus Aug. 8, 2000
6095159 Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilities Aug. 1, 2000
6096160 Helicon wave plasma processing apparatus Aug. 1, 2000
6097157 System for ion energy control during plasma processing Aug. 1, 2000
6095083 Vacuum processing chamber having multi-mode access Aug. 1, 2000
6093281 Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers Jul. 25, 2000
6090303 Process for etching oxides in an electromagnetically coupled planar plasma apparatus Jul. 18, 2000
6090167 Method and apparatus for improving film stability of halogen-doped silicon oxide films Jul. 18, 2000
6089182 Plasma processing apparatus Jul. 18, 2000
6085688 Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor Jul. 11, 2000
6085689 Apparatus to increase gas residence time in a reactor Jul. 11, 2000
6087778 Scalable helicon wave plasma processing device with a non-cylindrical source chamber having a serpentine antenna Jul. 11, 2000
6080271 Plasma source for generating inductively coupled, plate-shaped plasma, having magnetically permeable core Jun. 27, 2000
6079357 Plasma processing apparatus Jun. 27, 2000
6076482 Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion Jun. 20, 2000
6077384 Plasma reactor having an inductive antenna coupling power through a parallel plate electrode Jun. 20, 2000
6074512 Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners Jun. 13, 2000
6074516 High sputter, etch resistant window for plasma processing chambers Jun. 13, 2000
6073578 RF induction plasma source generating apparatus Jun. 13, 2000
6071372 RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls Jun. 6, 2000
6070550 Apparatus for the stabilization of halogen-doped films through the use of multiple sealing layers Jun. 6, 2000
6070551 Deposition chamber and method for depositing low dielectric constant films Jun. 6, 2000
6068784 Process used in an RF coupled plasma reactor May. 30, 2000
6063233 Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna May. 16, 2000
6062163 Plasma initiating assembly May. 16, 2000
6056848 Thin film electrostatic shield for inductive plasma processing May. 2, 2000
6055927 Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology May. 2, 2000
6054013 Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density Apr. 25, 2000
6051286 High temperature, high deposition rate process and apparatus for depositing titanium layers Apr. 18, 2000
6051151 Apparatus and method of producing a negative ion plasma Apr. 18, 2000
6051120 Thin film forming apparatus Apr. 18, 2000
6042687 Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing Mar. 28, 2000
6041735 Inductively coupled plasma powder vaporization for fabricating integrated circuits Mar. 28, 2000
6033585 Method and apparatus for preventing lightup of gas distribution holes Mar. 7, 2000
6030667 Apparatus and method for applying RF power apparatus and method for generating plasma and apparatus and method for processing with plasma Feb. 29, 2000
6030486 Magnetically confined plasma reactor for processing a semiconductor wafer Feb. 29, 2000
6028286 Method for igniting a plasma inside a plasma processing reactor Feb. 22, 2000
6027603 Inductively coupled planar source for substantially uniform plasma flux Feb. 22, 2000
6027606 Center gas feed apparatus for a high density plasma reactor Feb. 22, 2000
6028285 High density plasma source for semiconductor processing Feb. 22, 2000
6028395 Vacuum plasma processor having coil with added conducting segments to its peripheral part Feb. 22, 2000
6027601 Automatic frequency tuning of an RF plasma source of an inductively coupled plasma reactor Feb. 22, 2000
6024826 Plasma reactor with heated source of a polymer-hardening precursor material Feb. 15, 2000
6024827 Plasma processing apparatus Feb. 15, 2000
6023038 Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system Feb. 8, 2000
6022460 Enhanced inductively coupled plasma reactor Feb. 8, 2000
6016765 Plasma processing apparatus Jan. 25, 2000
6015476 Plasma reactor magnet with independently controllable parallel axial current-carrying elements Jan. 18, 2000
6013155 Gas injection system for plasma processing Jan. 11, 2000
6006694 Plasma reactor with a deposition shield Dec. 28, 1999

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