 |
|
 |
| |
 |
|
Class Information
Number: 117/99
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes)
Description: Subject matter including a step of forming a precursor*, including dopant* precursor*, by a chemical reaction* (except ionization) in a location separate from the deposition zone.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608539 |
ALD method and apparatus |
Oct. 27, 2009 |
| 7556688 |
Method for achieving low defect density AlGaN single crystal boules |
Jul. 7, 2009 |
| 7501023 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
Mar. 10, 2009 |
| 7488385 |
Method for epitaxial growth of a gallium nitride film separated from its substrate |
Feb. 10, 2009 |
| 7481881 |
Method of manufacturing GaN crystal substrate |
Jan. 27, 2009 |
| 7438761 |
Apparatus for fabricating a III-V nitride film and a method for fabricating the same |
Oct. 21, 2008 |
| 7427555 |
Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy |
Sep. 23, 2008 |
| 7402206 |
Method of synthesizing a compound of the formula M.sub.n+1AX.sub.n, film of the compound and its use |
Jul. 22, 2008 |
| 7399357 |
Atomic layer deposition using multilayers |
Jul. 15, 2008 |
| 7384481 |
Method of forming a rare-earth dielectric layer |
Jun. 10, 2008 |
| 7357837 |
GaN single crystal substrate and method of making the same |
Apr. 15, 2008 |
| 7250083 |
ALD method and apparatus |
Jul. 31, 2007 |
| 7147713 |
Phase controlled sublimation |
Dec. 12, 2006 |
| 7128785 |
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates |
Oct. 31, 2006 |
| 7094289 |
Method for manufacturing highly-crystallized oxide powder |
Aug. 22, 2006 |
| 7084049 |
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate |
Aug. 1, 2006 |
| 7033439 |
Apparatus for fabricating a III-V nitride film and a method for fabricating the same |
Apr. 25, 2006 |
| 6972050 |
Method for depositing in particular crystalline layers, and device for carrying out the method |
Dec. 6, 2005 |
| 6969426 |
Forming improved metal nitrides |
Nov. 29, 2005 |
| 6962624 |
Method and device for depositing in particular organic layers using organic vapor phase deposition |
Nov. 8, 2005 |
| 6955719 |
Manufacturing methods for semiconductor devices with multiple III-V material layers |
Oct. 18, 2005 |
| 6821341 |
Precursor for use in preparing layers on substrates |
Nov. 23, 2004 |
| 6808803 |
Molecular epitaxy method and compositions |
Oct. 26, 2004 |
| 6783849 |
Molecular layer epitaxy method and compositions |
Aug. 31, 2004 |
| 6773508 |
Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same |
Aug. 10, 2004 |
| 6660083 |
Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE |
Dec. 9, 2003 |
| 6616757 |
Method for achieving low defect density GaN single crystal boules |
Sep. 9, 2003 |
| 6613143 |
Method for fabricating bulk GaN single crystals |
Sep. 2, 2003 |
| 6569240 |
Dielectric film and method for forming the same |
May. 27, 2003 |
| 6514338 |
Method and apparatus for producing silicon carbide single crystal |
Feb. 4, 2003 |
| 6497764 |
Method for growing SiC single crystals |
Dec. 24, 2002 |
| 6406539 |
Process for producing silicon carbide single crystal and production apparatus therefor |
Jun. 18, 2002 |
| 6316098 |
Molecular layer epitaxy method and compositions |
Nov. 13, 2001 |
| 6281098 |
Process for Polycrystalline film silicon growth |
Aug. 28, 2001 |
| 6273951 |
Precursor mixtures for use in preparing layers on substrates |
Aug. 14, 2001 |
| 6193797 |
Method of making SiC single crystal and apparatus for making SiC single crystal |
Feb. 27, 2001 |
| 6179913 |
Compound gas injection system and methods |
Jan. 30, 2001 |
| 6139631 |
Crystal growth method and apparatus |
Oct. 31, 2000 |
| 6139628 |
Method of forming gallium nitride crystal |
Oct. 31, 2000 |
| 6080297 |
Method and apparatus for constant composition delivery of hydride gases for semiconductor processing |
Jun. 27, 2000 |
| 6045612 |
Growth of bulk single crystals of aluminum nitride |
Apr. 4, 2000 |
| 6045613 |
Production of bulk single crystals of silicon carbide |
Apr. 4, 2000 |
| 6030454 |
Composition and method for forming thin film ferrite layers on a substrate |
Feb. 29, 2000 |
| 6017144 |
Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer |
Jan. 25, 2000 |
| 6001172 |
Apparatus and method for the in-situ generation of dopants |
Dec. 14, 1999 |
| 5997639 |
Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds |
Dec. 7, 1999 |
| 5985024 |
Method and apparatus for growing high purity single crystal silicon carbide |
Nov. 16, 1999 |
| 5954874 |
Growth of bulk single crystals of aluminum nitride from a melt |
Sep. 21, 1999 |
| 5925232 |
Method and apparatus for constant composition delivery of hydride gases for semiconductor processing |
Jul. 20, 1999 |
| 5858086 |
Growth of bulk single crystals of aluminum nitride |
Jan. 12, 1999 |
|
|
|
 |
|
 |
|
| |
Randomly Featured Patents |
|
