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Class Information
Number: 117/97
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > With pretreatment or preparation of a base (e.g., annealing) > Material removal (e.g., etching, cleaning, polishing)
Description: Subject matter in which the pretreatment involves removing material from the base*.

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8652255 Method of producing epitaxial layers with low basal plane dislocation concentrations Feb. 18, 2014
8591652 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy Nov. 26, 2013
8580035 Large aluminum nitride crystals with reduced defects and methods of making them Nov. 12, 2013
8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime Nov. 5, 2013
8541313 Method for etching a sacrificial layer for a micro-machined structure Sep. 24, 2013
8536030 Semipolar semiconductor crystal and method for manufacturing the same Sep. 17, 2013
8501143 Single crystal diamond prepared by CVD Aug. 6, 2013
8460464 Method for producing single crystalline diamonds Jun. 11, 2013
8420041 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal Apr. 16, 2013
8394197 Corrosion-resistant internal coating method using a germanium-containing precursor and hollow cathode techniques Mar. 12, 2013
8372198 Methods of forming dual damascene structures Feb. 12, 2013
8357243 Method for testing group III-nitride wafers and group III-nitride wafers with test data Jan. 22, 2013
8349077 Large aluminum nitride crystals with reduced defects and methods of making them Jan. 8, 2013
8349076 Method of fabricating GaN substrate Jan. 8, 2013
8334156 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same Dec. 18, 2012
8328935 Method of manufacturing polycrystalline silicon rod Dec. 11, 2012
8323402 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal Dec. 4, 2012
8263984 Process for making a GaN substrate Sep. 11, 2012
8241422 Gallium nitride single crystal growing method and gallium nitride single crystal Aug. 14, 2012
8241423 Silicon single crystal substrate and manufacture thereof Aug. 14, 2012
8236267 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal Aug. 7, 2012
8221548 Diamond semiconductor element and process for producing the same Jul. 17, 2012
8216367 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate Jul. 10, 2012
8197598 Method for manufacturing iron silicide nano-wires Jun. 12, 2012
8187377 Non-contact etch annealing of strained layers May. 29, 2012
8187956 Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semic May. 29, 2012
8168000 III-nitride semiconductor device fabrication May. 1, 2012
8142566 Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrat Mar. 27, 2012
8133321 Process for producing silicon carbide single crystal Mar. 13, 2012
8097080 Method of cutting single crystals Jan. 17, 2012
8092597 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Jan. 10, 2012
8043687 Structure including a graphene layer and method for forming the same Oct. 25, 2011
8038795 Epitaxial growth and cloning of a precursor chiral nanotube Oct. 18, 2011
8029620 Methods of forming carbon-containing silicon epitaxial layers Oct. 4, 2011
8025729 Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer Sep. 27, 2011
8019458 Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures Sep. 13, 2011
7955959 Method for manufacturing GaN-based film LED Jun. 7, 2011
7915152 III-V nitride substrate boule and method of making and using the same Mar. 29, 2011
7896965 Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip Mar. 1, 2011
7846491 Surface reconstruction method for silicon carbide substrate Dec. 7, 2010
7842134 Diamond based substrate for electronic devices Nov. 30, 2010
7837792 Method for manufacturing semiconductor device Nov. 23, 2010
7830027 Level realignment following an epitaxy step Nov. 9, 2010
7815734 Thin film transistor and method of fabricating the same Oct. 19, 2010
7794542 Bulk single crystal gallium nitride and method of making same Sep. 14, 2010
7786488 Nitride semiconductor wafer and method of processing nitride semiconductor wafer Aug. 31, 2010
7776154 Preparation method of a coating of gallium nitride Aug. 17, 2010
7749325 Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate Jul. 6, 2010
7736928 Precision printing electroplating through plating mask on a solar cell substrate Jun. 15, 2010
7708832 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate May. 4, 2010

1 2 3 4 5 6 7

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