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Class Information
Number: 117/955
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} > {b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40} > Gallium phosphide containing {c30b 29/44}
Description: A collection of art under the art collection 953 disclosing growing a single-crystal* comprising gallium phosphide.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7147712 |
Method of semiconductor nanoparticle synthesis |
Dec. 12, 2006 |
| 6936103 |
Low indium content quantum well structures |
Aug. 30, 2005 |
| 6911079 |
Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
Jun. 28, 2005 |
| 6884291 |
Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength band |
Apr. 26, 2005 |
| 6805744 |
Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates |
Oct. 19, 2004 |
| 6682596 |
Flow synthesis of quantum dot nanocrystals |
Jan. 27, 2004 |
| 6294018 |
Alignment techniques for epitaxial growth processes |
Sep. 25, 2001 |
| 6294019 |
Method of making group III-V compound semiconductor wafer |
Sep. 25, 2001 |
| 6231668 |
Method for manufacturing a calibrated scale in the nanometer range for technical devices used for the high resolution or ultrahigh-resolution imaging of structures and such scale |
May. 15, 2001 |
| 6048397 |
GaAsP epitaxial wafer and a method for manufacturing it |
Apr. 11, 2000 |
| 6036771 |
Method of manufacturing optical semiconductor device |
Mar. 14, 2000 |
| 6036772 |
Method for making semiconductor device |
Mar. 14, 2000 |
| 5895706 |
Epitaxial structure for GaP light-emitting diode |
Apr. 20, 1999 |
| 5716449 |
Method of forming a compound semiconductor material |
Feb. 10, 1998 |
| 5599389 |
Compound semiconductor and method of manufacturing the same |
Feb. 4, 1997 |
| 5571321 |
Method for producing a gallium phosphide epitaxial wafer |
Nov. 5, 1996 |
| 5538702 |
Gas stream purification apparatus |
Jul. 23, 1996 |
| 5538702 |
Gas stream purification apparatus |
Jul. 23, 1996 |
| 5529938 |
Method for producing light-emitting diode |
Jun. 25, 1996 |
| 5407858 |
Method of making gap red light emitting element substrate by LPE |
Apr. 18, 1995 |
| 5342475 |
Method of growing single crystal of compound semiconductor |
Aug. 30, 1994 |
| 5338389 |
Method of epitaxially growing compound crystal and doping method therein |
Aug. 16, 1994 |
| 5312506 |
Method for growing single crystals from melt |
May. 17, 1994 |
| 5266127 |
Epitaxial process for III-V compound semiconductor |
Nov. 30, 1993 |
| 5256381 |
Apparatus for growing single crystals of III-V compound semiconductors |
Oct. 26, 1993 |
| 5234534 |
Liquid-phase growth process of compound semiconductor |
Aug. 10, 1993 |
| 5232869 |
Metal deposition |
Aug. 3, 1993 |
| 5221413 |
Method for making low defect density semiconductor heterostructure and devices made thereby |
Jun. 22, 1993 |
| 5213654 |
Vapor-phase epitaxial growth method for semiconductor crystal layers |
May. 25, 1993 |
| 5131975 |
Controlled growth of semiconductor crystals |
Jul. 21, 1992 |
| 5124278 |
Amino replacements for arsine, antimony and phosphine |
Jun. 23, 1992 |
| 5112432 |
Organometallic compounds |
May. 12, 1992 |
| 5091333 |
Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth |
Feb. 25, 1992 |
| 5082798 |
Crystal growth method |
Jan. 21, 1992 |
| 5078830 |
Method for growing single crystal |
Jan. 7, 1992 |
| 5079184 |
Method of manufacturing III-IV group compound semiconductor device |
Jan. 7, 1992 |
| 5074953 |
Method for monocrystalline growth of dissociative compound semiconductors |
Dec. 24, 1991 |
| 5041186 |
Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas |
Aug. 20, 1991 |
| 5009860 |
Semiconductor rod zone melting apparatus |
Apr. 23, 1991 |
| 5009865 |
Bar and crucible magnetic suspension for a crystal-growing apparatus |
Apr. 23, 1991 |
| 5010033 |
Process for producing compound semiconductor using an amorphous nucleation site |
Apr. 23, 1991 |
| 4973454 |
LEC method and apparatus for growing a single crystal of compound semiconductors |
Nov. 27, 1990 |
| 4968642 |
Method of making a gallium arsenide phosphide-, mixed crystal-epitaxial wafer |
Nov. 6, 1990 |
| 4963508 |
Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice |
Oct. 16, 1990 |
| 4960720 |
Method of growing compound semiconductor thin film using multichamber smoothing process |
Oct. 2, 1990 |
| 4935384 |
Method of passivating semiconductor surfaces |
Jun. 19, 1990 |
| 4910167 |
III-V Semiconductor growth initiation on silicon using TMG and TEG |
Mar. 20, 1990 |
| 4904616 |
Method of depositing arsine, antimony and phosphine substitutes |
Feb. 27, 1990 |
| 4888303 |
Vapor phase epitaxy-hydride technique with a constant alloy source for the preparation of InGaAs layers |
Dec. 19, 1989 |
| 4880492 |
Organometallic compounds |
Nov. 14, 1989 |
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