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Class Information
Number: 117/954
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} > {b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40} > Gallium arsenide containing (e.g., gaalas, gaas) {c30b 29/42}
Description: A collection of art under the art collection 953 disclosing growing a single-crystal* comprising gallium arsenide.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7591895 |
Method and apparatus for producing crystals |
Sep. 22, 2009 |
| 7115167 |
Method of growing a semiconductor multi-layer structure |
Oct. 3, 2006 |
| 7048798 |
Silicon carbide single crystal and method and apparatus for producing the same |
May. 23, 2006 |
| 6958093 |
Free-standing (Al, Ga, In)N and parting method for forming same |
Oct. 25, 2005 |
| 6955858 |
Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same |
Oct. 18, 2005 |
| 6949140 |
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
Sep. 27, 2005 |
| 6911079 |
Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
Jun. 28, 2005 |
| 6808740 |
Magnetoresistance effect film and method of forming same |
Oct. 26, 2004 |
| 6780244 |
Method for producing a semiconductor crystal |
Aug. 24, 2004 |
| 6692837 |
Semi-insulating substrate, semiconductor optical device and fabrication method of semiconductor thin film |
Feb. 17, 2004 |
| 6673149 |
Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate |
Jan. 6, 2004 |
| 6613162 |
Multicomponent homogeneous alloys and method for making same |
Sep. 2, 2003 |
| 6572700 |
Semiconductor crystal, and method and apparatus of production thereof |
Jun. 3, 2003 |
| 6482672 |
Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates |
Nov. 19, 2002 |
| 6440212 |
Low cost method for making thermoelectric coolers |
Aug. 27, 2002 |
| 6358316 |
Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure |
Mar. 19, 2002 |
| 6294018 |
Alignment techniques for epitaxial growth processes |
Sep. 25, 2001 |
| 6287478 |
Optical window |
Sep. 11, 2001 |
| 6277297 |
Optical window composition |
Aug. 21, 2001 |
| 6273949 |
Method for fabricating orientation-patterned gallium arsenide seeding structures |
Aug. 14, 2001 |
| 6254677 |
Semiconductor crystal, and method and apparatus of production thereof |
Jul. 3, 2001 |
| 6238482 |
Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer |
May. 29, 2001 |
| 6231668 |
Method for manufacturing a calibrated scale in the nanometer range for technical devices used for the high resolution or ultrahigh-resolution imaging of structures and such scale |
May. 15, 2001 |
| 6184144 |
Methods for growing defect-free heteroepitaxial layers |
Feb. 6, 2001 |
| 6180269 |
GaAs single crystal substrate and epitaxial wafer using the same |
Jan. 30, 2001 |
| 6179912 |
Continuous flow process for production of semiconductor nanocrystals |
Jan. 30, 2001 |
| 6146457 |
Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
Nov. 14, 2000 |
| 6106613 |
Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate |
Aug. 22, 2000 |
| 6099640 |
Molecular beam epitaxial growth method |
Aug. 8, 2000 |
| 6071337 |
Apparatus and method for producing crystals by the czochralski method and crystals produced by this method |
Jun. 6, 2000 |
| 6066204 |
High pressure MOCVD reactor system |
May. 23, 2000 |
| 6048397 |
GaAsP epitaxial wafer and a method for manufacturing it |
Apr. 11, 2000 |
| 6036771 |
Method of manufacturing optical semiconductor device |
Mar. 14, 2000 |
| 6019840 |
Process for forming deep level impurity undoped phosphorous containing semi-insulating epitaxial layers |
Feb. 1, 2000 |
| 6010638 |
Conductive/insulating graded GaAs bulk material |
Jan. 4, 2000 |
| 5951754 |
Method of fabricating semiconductor quantum box |
Sep. 14, 1999 |
| 5919305 |
Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature |
Jul. 6, 1999 |
| 5888294 |
Epitaxial growth rate varying method for side surface of semiconductor pattern |
Mar. 30, 1999 |
| 5865888 |
Semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 |
Feb. 2, 1999 |
| 5853477 |
Manufacture of transition metal carbide, nitride and carbonitride whiskers |
Dec. 29, 1998 |
| 5827365 |
Compound semiconductor and its fabrication |
Oct. 27, 1998 |
| 5824151 |
Vapor deposition method |
Oct. 20, 1998 |
| 5759266 |
Method for growing a CdTe layer on a Si substrate by a molecular beam epitaxy |
Jun. 2, 1998 |
| 5759264 |
Method for vapor-phase growth |
Jun. 2, 1998 |
| 5738721 |
Liquid precursor and method for forming a cubic-phase passivating/buffer film |
Apr. 14, 1998 |
| 5716449 |
Method of forming a compound semiconductor material |
Feb. 10, 1998 |
| 5702822 |
Method for producing single crystal, and needle-like single crystal |
Dec. 30, 1997 |
| 5693139 |
Growth of doped semiconductor monolayers |
Dec. 2, 1997 |
| 5679603 |
Method of making semiconductor device including high resistivity layer |
Oct. 21, 1997 |
| 5656540 |
Semiconductor crystal growing method |
Aug. 12, 1997 |
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