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Class Information
Number: 117/953
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} > {b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40}
Description: A collection of art under the art collection 937 disclosing growing a single-crystal* comprising a compound of the formula {B,Al,Ga,In,Tl} {P,As,Sb,Bi}, except the intermetallics thereof {Al,Ga,In,Tl}{Sb,Bi}.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7323256 |
Large area, uniformly low dislocation density GaN substrate and process for making the same |
Jan. 29, 2008 |
| RE39778 |
Method of preparing group III-V compound semiconductor crystal |
Aug. 21, 2007 |
| 7211337 |
Compound crystal and method of manufacturing same |
May. 1, 2007 |
| 7135070 |
Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making |
Nov. 14, 2006 |
| 7132091 |
Single crystal silicon ingot having a high arsenic concentration |
Nov. 7, 2006 |
| 7128783 |
Thin-film crystal-structure-processed mechanical devices, and methods and systems for making |
Oct. 31, 2006 |
| 7125451 |
Crystal-structure-processed mechanical devices and methods and systems for making |
Oct. 24, 2006 |
| 7118813 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Oct. 10, 2006 |
| 7097920 |
Group III nitride based semiconductor substrate and process for manufacture thereof |
Aug. 29, 2006 |
| 7011707 |
Production method for semiconductor substrate and semiconductor element |
Mar. 14, 2006 |
| 6955858 |
Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same |
Oct. 18, 2005 |
| 6936357 |
Bulk GaN and ALGaN single crystals |
Aug. 30, 2005 |
| 6936103 |
Low indium content quantum well structures |
Aug. 30, 2005 |
| 6911079 |
Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
Jun. 28, 2005 |
| 6884291 |
Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength band |
Apr. 26, 2005 |
| 6860939 |
Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making |
Mar. 1, 2005 |
| 6841274 |
GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same |
Jan. 11, 2005 |
| 6703144 |
Heterointegration of materials using deposition and bonding |
Mar. 9, 2004 |
| 6692568 |
Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon |
Feb. 17, 2004 |
| 6692837 |
Semi-insulating substrate, semiconductor optical device and fabrication method of semiconductor thin film |
Feb. 17, 2004 |
| 6656615 |
Bulk monocrystalline gallium nitride |
Dec. 2, 2003 |
| 6623559 |
Method for the production of semiconductor quantum particles |
Sep. 23, 2003 |
| 6613162 |
Multicomponent homogeneous alloys and method for making same |
Sep. 2, 2003 |
| 6602613 |
Heterointegration of materials using deposition and bonding |
Aug. 5, 2003 |
| 6468347 |
Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
Oct. 22, 2002 |
| 6440212 |
Low cost method for making thermoelectric coolers |
Aug. 27, 2002 |
| 6375739 |
Apparatus and process for crystal growth |
Apr. 23, 2002 |
| 6231668 |
Method for manufacturing a calibrated scale in the nanometer range for technical devices used for the high resolution or ultrahigh-resolution imaging of structures and such scale |
May. 15, 2001 |
| 6179912 |
Continuous flow process for production of semiconductor nanocrystals |
Jan. 30, 2001 |
| 6107112 |
Distributed feedback semiconductor laser and method for producing the same |
Aug. 22, 2000 |
| 6099640 |
Molecular beam epitaxial growth method |
Aug. 8, 2000 |
| 6036773 |
Method for growing Group III atomic layer |
Mar. 14, 2000 |
| 6036769 |
Preparation of semiconductor substrates |
Mar. 14, 2000 |
| 6007622 |
Method of preparing group III-V compound semiconductor crystal |
Dec. 28, 1999 |
| 5985023 |
Method for growth of a nitrogen-doped gallium phosphide epitaxial layer |
Nov. 16, 1999 |
| 5980632 |
Member for use in production device for semiconductors |
Nov. 9, 1999 |
| 5888294 |
Epitaxial growth rate varying method for side surface of semiconductor pattern |
Mar. 30, 1999 |
| 5888296 |
Method for making a ferroelectric semiconductor device and a layered structure |
Mar. 30, 1999 |
| 5855669 |
Method for fabricating grating coupler |
Jan. 5, 1999 |
| 5824151 |
Vapor deposition method |
Oct. 20, 1998 |
| 5738722 |
III-V system compound semiconductor device and method for manufacturing the semiconductor device |
Apr. 14, 1998 |
| 5735950 |
Method for producing a precise alloy composition from input variables under nonlinear incorporation conditions |
Apr. 7, 1998 |
| 5733796 |
Light-emitting semiconductor device using gallium nitride group compound |
Mar. 31, 1998 |
| 5714006 |
Method of growing compound semiconductor layer |
Feb. 3, 1998 |
| 5693139 |
Growth of doped semiconductor monolayers |
Dec. 2, 1997 |
| 5679603 |
Method of making semiconductor device including high resistivity layer |
Oct. 21, 1997 |
| 5656538 |
Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices |
Aug. 12, 1997 |
| 5633193 |
Method of making an InP-based device comprising semiconductor growth on a non-planar surface |
May. 27, 1997 |
| 5603765 |
Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy |
Feb. 18, 1997 |
| 5505159 |
Epitaxial growth method of semiconductor crystal and molecular beam epitaxy apparatus for the same |
Apr. 9, 1996 |
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