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Class Information
Number: 117/952
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} > Nitride containing (e.g., gan, cbn) {c30b 29/38}
Description: A collection of art under the art collection 937 disclosing growing a single-crystal* comprising a nitride compound.


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
5100870 Method of making a superconducting oxide comprising contacting a melt with an oxygen-containing atmosphere Mar. 31, 1992
5096860 Process for producing unagglomerated single crystals of aluminum nitride Mar. 17, 1992
5080753 Laser deposition of crystalline boron nitride films Jan. 14, 1992
5055276 Ceramic whisker growing system Oct. 8, 1991
5043219 Composite material Aug. 27, 1991
5011790 Method of manufacturing cubic boron nitride p-n junction body Apr. 30, 1991
4918028 Process for photo-assisted epitaxial growth using remote plasma with in-situ etching Apr. 17, 1990
4911102 Process of vapor growth of gallium nitride and its apparatus Mar. 27, 1990
4900525 Chemical vapor deposition reactor for producing metal carbide or nitride whiskers Feb. 13, 1990
4900526 Polycrystalline rhombohedral boron nitride and method of producing the same Feb. 13, 1990
4897149 Method of fabricating single-crystal substrates of silicon carbide Jan. 30, 1990
4888084 Method for the preparation of titanium nitride whiskers Dec. 19, 1989
4883648 Cubic boron nitride manufacture Nov. 28, 1989
4883559 Process for making transition metal nitride whiskers Nov. 28, 1989
4882135 Process for the production of transparent aluminum nitride coatings from ammine salts of aluminum iodides Nov. 21, 1989
4882136 Process for the production of transparent aluminum nitride films Nov. 21, 1989
4875967 Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element Oct. 24, 1989
4855249 Process for growing III-V compound semiconductors on sapphire using a buffer layer Aug. 8, 1989
4756791 Chemical vapor deposition process for producing metal carbide or nitride whiskers Jul. 12, 1988
4699687 Method of synthesizing cubic system boron nitride Oct. 13, 1987
4681653 Planarized dielectric deposited using plasma enhanced chemical vapor deposition Jul. 21, 1987
4539068 Vapor phase growth method Sep. 3, 1985
4509997 Organometallic chemical vapor deposition of films utilizing organic heterocyclic compounds Apr. 9, 1985
4473938 Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition Oct. 2, 1984
4448633 Passivation of III-V semiconductor surfaces by plasma nitridation May. 15, 1984
4430051 Reaction vessel Feb. 7, 1984
4352713 Vapor growth method Oct. 5, 1982
4323418 Method for growing a pipe-shaped single crystal Apr. 6, 1982
4312921 Super hard-highly pure silicon nitrides Jan. 26, 1982
4279689 Process for producing super hard-highly pure silicon nitrides Jul. 21, 1981
4234554 Stable crystalline lithium nitride and process for its preparation Nov. 18, 1980
4232063 Chemical vapor deposition reactor and process Nov. 4, 1980
4189516 Epitaxial crystalline aluminium nitride Feb. 19, 1980
4172754 Synthesis of aluminum nitride Oct. 30, 1979
4152182 Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide May. 1, 1979
4144116 Vapor deposition of single crystal gallium nitride Mar. 13, 1979
4118539 Super hard-highly pure silicon nitrides having a preferred crystal face orientation Oct. 3, 1978
4081313 Process for preparing semiconductor wafers with substantially no crystallographic slip Mar. 28, 1978
4045186 Method for producing large soft hexagonal boron nitride particles Aug. 30, 1977
4016331 Composite polymeric material formed with an epitaxial crystalline film of polymeric sulfur nitride, and method of preparing same Apr. 5, 1977
3933573 Aluminum nitride single crystal growth from a molten mixture with calcium nitride Jan. 20, 1976

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