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Class Information
Number: 117/952
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} > Nitride containing (e.g., gan, cbn) {c30b 29/38}
Description: A collection of art under the art collection 937 disclosing growing a single-crystal* comprising a nitride compound.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6527853 |
Method for producing nitride monocrystals |
Mar. 4, 2003 |
| 6527857 |
Method and apparatus for growing a gallium nitride boule |
Mar. 4, 2003 |
| 6511539 |
Apparatus and method for growth of a thin film |
Jan. 28, 2003 |
| 6508879 |
Method of fabricating group III-V nitride compound semiconductor and method of fabricating semiconductor device |
Jan. 21, 2003 |
| 6500258 |
Method of growing a semiconductor layer |
Dec. 31, 2002 |
| 6471769 |
Method of manufacturing a nitride series III-V group compound semiconductor |
Oct. 29, 2002 |
| 6468347 |
Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
Oct. 22, 2002 |
| 6447604 |
METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRO |
Sep. 10, 2002 |
| 6413627 |
GaN single crystal substrate and method of producing same |
Jul. 2, 2002 |
| 6413312 |
Method for growing a nitride compound semiconductor |
Jul. 2, 2002 |
| 6406540 |
Process and apparatus for the growth of nitride materials |
Jun. 18, 2002 |
| 6402836 |
Method for epitaxial growth on a substrate |
Jun. 11, 2002 |
| 6398867 |
Crystalline gallium nitride and method for forming crystalline gallium nitride |
Jun. 4, 2002 |
| 6379472 |
Group III-nitride thin films grown using MBE and bismuth |
Apr. 30, 2002 |
| 6375739 |
Apparatus and process for crystal growth |
Apr. 23, 2002 |
| 6350666 |
Method and apparatus for producing group-III nitrides |
Feb. 26, 2002 |
| 6348096 |
Method for manufacturing group III-V compound semiconductors |
Feb. 19, 2002 |
| 6348094 |
SAW or LSAW device piezoelectric single crystal wafer and method of making |
Feb. 19, 2002 |
| 6325850 |
Method for producing a gallium nitride epitaxial layer |
Dec. 4, 2001 |
| 6319742 |
Method of forming nitride based semiconductor layer |
Nov. 20, 2001 |
| 6294016 |
Method for manufacturing p-type GaN based thin film using nitridation |
Sep. 25, 2001 |
| 6290774 |
Sequential hydride vapor phase epitaxy |
Sep. 18, 2001 |
| 6284042 |
Method of growing nitride crystal of group III element |
Sep. 4, 2001 |
| 6273948 |
Method of fabrication of highly resistive GaN bulk crystals |
Aug. 14, 2001 |
| 6270569 |
Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
Aug. 7, 2001 |
| 6270574 |
Method of growing a buffer layer using molecular beam epitaxy |
Aug. 7, 2001 |
| 6255004 |
III-V nitride semiconductor devices and process for the production thereof |
Jul. 3, 2001 |
| 6254675 |
Production of epitactic GaN layers on substrates |
Jul. 3, 2001 |
| 6218269 |
Process for producing III-V nitride pn junctions and p-i-n junctions |
Apr. 17, 2001 |
| 6203613 |
Atomic layer deposition with nitrate containing precursors |
Mar. 20, 2001 |
| 6176925 |
Detached and inverted epitaxial regrowth & methods |
Jan. 23, 2001 |
| 6177292 |
Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
Jan. 23, 2001 |
| 6168659 |
Method of forming gallium nitride crystal |
Jan. 2, 2001 |
| 6153010 |
Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
Nov. 28, 2000 |
| 6146916 |
Method for forming a GaN-based semiconductor light emitting device |
Nov. 14, 2000 |
| 6146457 |
Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
Nov. 14, 2000 |
| 6139629 |
Group III-nitride thin films grown using MBE and bismuth |
Oct. 31, 2000 |
| 6139628 |
Method of forming gallium nitride crystal |
Oct. 31, 2000 |
| 6136093 |
Method of making GaN single crystal and apparatus for making GaN single crystal |
Oct. 24, 2000 |
| 6123768 |
Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
Sep. 26, 2000 |
| 6120600 |
Double heterojunction light emitting diode with gallium nitride active layer |
Sep. 19, 2000 |
| 6113685 |
Method for relieving stress in GaN devices |
Sep. 5, 2000 |
| 6113692 |
Apparatus and process for the formation of monocrystalline silicon carbide (SiC) on a nucleus |
Sep. 5, 2000 |
| 6110277 |
Process for the fabrication of epitaxial layers of a compound semiconductor on monocrystal silicon and light-emitting diode fabricated therefrom |
Aug. 29, 2000 |
| 6110809 |
Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer |
Aug. 29, 2000 |
| 6100106 |
Fabrication of nitride semiconductor light-emitting device |
Aug. 8, 2000 |
| 6096130 |
Method of crystal growth of a GaN layer over a GaAs substrate |
Aug. 1, 2000 |
| 6086672 |
Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
Jul. 11, 2000 |
| 6083812 |
Heteroepitaxy by large surface steps |
Jul. 4, 2000 |
| 6066205 |
Growth of bulk single crystals of aluminum nitride from a melt |
May. 23, 2000 |
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