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Class Information
Number: 117/952
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} > Nitride containing (e.g., gan, cbn) {c30b 29/38}
Description: A collection of art under the art collection 937 disclosing growing a single-crystal* comprising a nitride compound.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7435297 |
Molten-salt-based growth of group III nitrides |
Oct. 14, 2008 |
| 7422633 |
Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate |
Sep. 9, 2008 |
| 7402206 |
Method of synthesizing a compound of the formula M.sub.n+1AX.sub.n, film of the compound and its use |
Jul. 22, 2008 |
| 7390581 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Jun. 24, 2008 |
| 7387679 |
Silicon carbide single crystal and method and apparatus for producing the same |
Jun. 17, 2008 |
| 7387677 |
Substrate for epitaxy and method of preparing the same |
Jun. 17, 2008 |
| 7374618 |
Group III nitride semiconductor substrate |
May. 20, 2008 |
| 7357837 |
GaN single crystal substrate and method of making the same |
Apr. 15, 2008 |
| 7341628 |
Method to reduce crystal defects particularly in group III-nitride layers and substrates |
Mar. 11, 2008 |
| 7338555 |
Highly crystalline aluminum nitride multi-layered substrate and production process thereof |
Mar. 4, 2008 |
| 7332031 |
Bulk single crystal gallium nitride and method of making same |
Feb. 19, 2008 |
| 7323050 |
Method of producing lithium tantalate crystal |
Jan. 29, 2008 |
| 7323256 |
Large area, uniformly low dislocation density GaN substrate and process for making the same |
Jan. 29, 2008 |
| 7309534 |
Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same |
Dec. 18, 2007 |
| 7306675 |
Method for manufacturing semiconductor substrate |
Dec. 11, 2007 |
| 7294198 |
Process for producing single-crystal gallium nitride |
Nov. 13, 2007 |
| 7294200 |
Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device |
Nov. 13, 2007 |
| 7294199 |
Nitride single crystal and producing method thereof |
Nov. 13, 2007 |
| 7256110 |
Crystal manufacturing method |
Aug. 14, 2007 |
| 7229493 |
3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same |
Jun. 12, 2007 |
| 7220314 |
Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device |
May. 22, 2007 |
| 7221037 |
Method of manufacturing group III nitride substrate and semiconductor device |
May. 22, 2007 |
| 7220311 |
Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride |
May. 22, 2007 |
| 7211337 |
Compound crystal and method of manufacturing same |
May. 1, 2007 |
| 7198971 |
Nitride semiconductor thin film having fewer defects and method of growing the same |
Apr. 3, 2007 |
| 7198671 |
Layered substrates for epitaxial processing, and device |
Apr. 3, 2007 |
| 7160388 |
Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
Jan. 9, 2007 |
| 7128786 |
Process for depositing III-V semiconductor layers on a non-III-V substrate |
Oct. 31, 2006 |
| 7128846 |
Process for producing group III nitride compound semiconductor |
Oct. 31, 2006 |
| 7118813 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Oct. 10, 2006 |
| 7115165 |
Single crystal of nitride containing metal element of group III or IV and method for preparing the same |
Oct. 3, 2006 |
| 7115167 |
Method of growing a semiconductor multi-layer structure |
Oct. 3, 2006 |
| 7112243 |
Method for producing Group III nitride compound semiconductor |
Sep. 26, 2006 |
| 7108745 |
Formation method for semiconductor layer |
Sep. 19, 2006 |
| 7097920 |
Group III nitride based semiconductor substrate and process for manufacture thereof |
Aug. 29, 2006 |
| 7087112 |
Nitride ceramics to mount aluminum nitride seed for sublimation growth |
Aug. 8, 2006 |
| 7063741 |
High pressure high temperature growth of crystalline group III metal nitrides |
Jun. 20, 2006 |
| 7056383 |
Tantalum based crucible |
Jun. 6, 2006 |
| 7045009 |
Method and apparatus for manufacturing single crystal |
May. 16, 2006 |
| 7033436 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Apr. 25, 2006 |
| 7033439 |
Apparatus for fabricating a III-V nitride film and a method for fabricating the same |
Apr. 25, 2006 |
| 6969426 |
Forming improved metal nitrides |
Nov. 29, 2005 |
| 6969670 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
Nov. 29, 2005 |
| 6958093 |
Free-standing (Al, Ga, In)N and parting method for forming same |
Oct. 25, 2005 |
| 6955858 |
Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same |
Oct. 18, 2005 |
| 6955719 |
Manufacturing methods for semiconductor devices with multiple III-V material layers |
Oct. 18, 2005 |
| 6940103 |
Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device |
Sep. 6, 2005 |
| 6936357 |
Bulk GaN and ALGaN single crystals |
Aug. 30, 2005 |
| 6933002 |
Method for manufacturing organic EL device with protective layer |
Aug. 23, 2005 |
| 6911083 |
Method for producing powders made of gallium nitride and apparatus for producing the same |
Jun. 28, 2005 |
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