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Class Information
Number: 117/95
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > With pretreatment or preparation of a base (e.g., annealing) > Coating (e.g., masking, implanting)
Description: Subject matter in which the pretreatment is coating of the base*.


Sub-classes under this class:

Class Number Class Name Patents
117/96 For autodoping control 67


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
7407548 Method of manufacturing a wafer Aug. 5, 2008
7407549 Diamond single crystal composite substrate and method for manufacturing the same Aug. 5, 2008
7404858 Method for epitaxial growth of silicon carbide Jul. 29, 2008
7399356 Method for preparation of ferroelectric single crystal film structure using deposition method Jul. 15, 2008
7396410 Featuring forming methods to reduce stacking fault nucleation sites Jul. 8, 2008
7396409 Acicular silicon crystal and process for producing the same Jul. 8, 2008
7393411 .beta.-Ga.sub.2O.sub.3 single crystal growing method, thin-film single crystal growing method, Ga.sub.2O.sub.3 light-emitting device, and its manufacturing method Jul. 1, 2008
7387678 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same Jun. 17, 2008
7384479 Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength Jun. 10, 2008
7381397 Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals Jun. 3, 2008
7368014 Variable temperature deposition methods May. 6, 2008
7361222 Device and method for producing single crystals by vapor deposition Apr. 22, 2008
7357837 GaN single crystal substrate and method of making the same Apr. 15, 2008
7354477 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Apr. 8, 2008
7338554 Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof Mar. 4, 2008
7335255 Manufacturing method of semiconductor device Feb. 26, 2008
7332030 Method of treating a part in order to alter at least one of the properties thereof Feb. 19, 2008
7326293 Patterned atomic layer epitaxy Feb. 5, 2008
7326295 Fabrication method for polycrystalline silicon thin film and apparatus using the same Feb. 5, 2008
7311777 Process for manufacturing quartz crystal element Dec. 25, 2007
7311776 Localized synthesis and self-assembly of nanostructures Dec. 25, 2007
7309394 Ultraviolet light-emitting device in which p-type semiconductor is used Dec. 18, 2007
7303630 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Dec. 4, 2007
7303631 Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer Dec. 4, 2007
7303628 Nanocrystals with linear and branched topology Dec. 4, 2007
7294202 Process for manufacturing self-assembled nanoparticles Nov. 13, 2007
7291218 Method of fabricating orientation film for liquid crystal display device Nov. 6, 2007
7288153 Method of fabricating orientation film for crystal display device Oct. 30, 2007
7261777 Method for fabricating an epitaxial substrate Aug. 28, 2007
7258742 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus Aug. 21, 2007
7255745 Iridium oxide nanowires and method for forming same Aug. 14, 2007
7255742 Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device Aug. 14, 2007
7244308 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and me Jul. 17, 2007
7238232 Growth of textured gallium nitride thin films on polycrystalline substrates Jul. 3, 2007
7235131 Method for forming a single crystalline film Jun. 26, 2007
7235129 Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof Jun. 26, 2007
7232488 Method of fabrication of a substrate for an epitaxial growth Jun. 19, 2007
7229500 Methods and devices for high throughput crystallization Jun. 12, 2007
7229501 Silicon epitaxial wafer and process for manufacturing the same Jun. 12, 2007
7229498 Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys Jun. 12, 2007
7226509 Method for fabricating a carrier substrate Jun. 5, 2007
7226504 Method to form thick relaxed SiGe layer with trench structure Jun. 5, 2007
7220315 Method of producing polycrystalline thin film and method of producing an oxide superconducting element May. 22, 2007
7217323 Equipment and method for manufacturing silicon carbide single crystal May. 15, 2007
7217324 Method and device for producing an electronic GaAs detector for x-ray detection for imaging May. 15, 2007
7192482 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals Mar. 20, 2007
7192483 Method for diamond coating substrates Mar. 20, 2007
7189287 Atomic layer deposition using electron bombardment Mar. 13, 2007
7175709 Epitaxy layer and method of forming the same Feb. 13, 2007
7169227 Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer Jan. 30, 2007

1 2 3 4 5 6 7 8


 
 
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