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Class Information
Number: 117/94
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > With pretreatment or preparation of a base (e.g., annealing)
Description: Subject matter in which a base* is prepared or is subject to treatment prior to single-crystal* growth.










Sub-classes under this class:

Class Number Class Name Patents
117/95 Coating (e.g., masking, implanting) 506
117/97 Material removal (e.g., etching, cleaning, polishing) 304


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8691012 Method of manufacturing zinc oxide nanowires Apr. 8, 2014
8652255 Method of producing epitaxial layers with low basal plane dislocation concentrations Feb. 18, 2014
8632633 In-situ growth of engineered defects in graphene by epitaxial reproduction Jan. 21, 2014
8608849 Method for making zinc oxide nano-structrure Dec. 17, 2013
8597427 Method of manufacturing a semiconductor device Dec. 3, 2013
8591652 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy Nov. 26, 2013
8591856 Single crystal diamond electrochemical electrode Nov. 26, 2013
8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime Nov. 5, 2013
8551246 Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer Oct. 8, 2013
8529698 Ingan columnar nano-heterostructures for solar cells Sep. 10, 2013
8530338 Structures of and methods for forming vertically aligned Si wire arrays Sep. 10, 2013
8506707 Substrate surface modifications for compositional gradation of crystalline materials and associated products Aug. 13, 2013
8501143 Single crystal diamond prepared by CVD Aug. 6, 2013
8460464 Method for producing single crystalline diamonds Jun. 11, 2013
8404571 Film deposition method Mar. 26, 2013
8404045 Method for manufacturing group III nitride single crystals Mar. 26, 2013
8404042 Group-III nitride crystal composite Mar. 26, 2013
8394197 Corrosion-resistant internal coating method using a germanium-containing precursor and hollow cathode techniques Mar. 12, 2013
8349076 Method of fabricating GaN substrate Jan. 8, 2013
8328935 Method of manufacturing polycrystalline silicon rod Dec. 11, 2012
8328936 Producing a diamond semiconductor by implanting dopant using ion implantation Dec. 11, 2012
8323402 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal Dec. 4, 2012
8273177 Titanium-doped indium oxide films Sep. 25, 2012
8268076 SOI wafers having M.sub.xO.sub.y oxide layers on a substrate wafer and an amorphous interlayer adjacent the substrate wafer Sep. 18, 2012
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Sep. 4, 2012
8246746 Laser uses for single-crystal CVD diamond Aug. 21, 2012
8226767 Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof Jul. 24, 2012
8221548 Diamond semiconductor element and process for producing the same Jul. 17, 2012
8216367 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate Jul. 10, 2012
8197598 Method for manufacturing iron silicide nano-wires Jun. 12, 2012
8198628 Doped substrate to be heated Jun. 12, 2012
8187379 Method of producing high quality relaxed silicon germanium layers May. 29, 2012
8168000 III-nitride semiconductor device fabrication May. 1, 2012
8152919 Epitaxial silicon wafer and fabrication method thereof Apr. 10, 2012
8147612 Method for manufacturing gallium nitride crystal and gallium nitride wafer Apr. 3, 2012
8133320 Diamond heat sink in a laser Mar. 13, 2012
8133321 Process for producing silicon carbide single crystal Mar. 13, 2012
8128749 Fabrication of SOI with gettering layer Mar. 6, 2012
8123858 Manufacturing method of semiconductor device and substrate processing apparatus Feb. 28, 2012
8118934 Non-polar III-V nitride material and production method Feb. 21, 2012
8119241 Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film Feb. 21, 2012
8092597 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Jan. 10, 2012
8038795 Epitaxial growth and cloning of a precursor chiral nanotube Oct. 18, 2011
8016943 Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides Sep. 13, 2011
7972440 Monitoring and control of a fabrication process Jul. 5, 2011
7959731 Method for producing semiconductor wafer Jun. 14, 2011
7955434 Diamond single crystal substrate Jun. 7, 2011
7955435 Method of producing high quality relaxed silicon germanium layers Jun. 7, 2011
7942966 Method of growing boron doped single crystal diamond in a plasma reactor May. 17, 2011

1 2 3 4 5 6 7 8










 
 
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