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Class Information
Number: 117/939
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} > Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, sige, insb) {c30b 29/40, 29/52}
Description: A collection of art under the art collection 937 disclosing growing a single-crystal* comprising free metal* or intermetallic compound or silicon-metal* compound; except arsenic.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8568681 Hydride compounds with silicon and germanium core atoms and method of synthesizing same Oct. 29, 2013
8187377 Non-contact etch annealing of strained layers May. 29, 2012
8048222 Highly pure modafinil Nov. 1, 2011
8043980 Methods for making and using halosilylgermanes Oct. 25, 2011
7981392 Hydride compounds with silicon and germanium core atoms and method of synthesizing same Jul. 19, 2011
7820523 Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor Oct. 26, 2010
7759228 Semiconductor device and method of manufacturing the same Jul. 20, 2010
7674335 Method of producing high quality relaxed silicon germanium layers Mar. 9, 2010
7615116 Method for producing silicon epitaxial wafer and silicon epitaxial wafer Nov. 10, 2009
7608147 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them Oct. 27, 2009
7598513 Si.sub.xSn.sub.yGe.sub.1-x-y and related alloy heterostructures based on Si, Ge and Sn Oct. 6, 2009
7594967 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy Sep. 29, 2009
7557018 Element fabrication substrate Jul. 7, 2009
7540920 Silicon-containing layer deposition with silicon compounds Jun. 2, 2009
7501331 Low-temperature metal-induced crystallization of silicon-germanium films Mar. 10, 2009
7488386 Atomic layer deposition methods and chemical vapor deposition methods Feb. 10, 2009
7452792 Relaxation of layers Nov. 18, 2008
7374617 Atomic layer deposition methods and chemical vapor deposition methods May. 20, 2008
7357838 Relaxed silicon germanium substrate with low defect density Apr. 15, 2008
7306670 Method for producing monocrystalline structures Dec. 11, 2007
7147709 Non-contact etch annealing of strained layers Dec. 12, 2006
7105052 Ordered array of magnetized nanorods and associated methods Sep. 12, 2006
7041170 Method of producing high quality relaxed silicon germanium layers May. 9, 2006
6890835 Layer transfer of low defect SiGe using an etch-back process May. 10, 2005
6887441 High resistivity aluminum antimonide radiation detector May. 3, 2005
6881259 In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films Apr. 19, 2005
6849120 Oxidation method for preparing highly pure modafinil, crystalline forms of modafinil, and methods of preparing the crystalline forms Feb. 1, 2005
6830617 Method for manufacturing semiconductor device Dec. 14, 2004
6764546 Apparatus and method for growth of a thin film Jul. 20, 2004
6719841 Manufacturing method for high-density magnetic data storage media Apr. 13, 2004
6689211 Etch stop layer system Feb. 10, 2004
6660393 SiGeC semiconductor crystals and the method producing the same Dec. 9, 2003
6656573 Method to grow self-assembled epitaxial nanowires Dec. 2, 2003
6569240 Dielectric film and method for forming the same May. 27, 2003
6524651 Oxidized film structure and method of making epitaxial metal oxide structure Feb. 25, 2003
6521041 Etch stop layer system Feb. 18, 2003
6511539 Apparatus and method for growth of a thin film Jan. 28, 2003
6228166 Method for boron contamination reduction in IC fabrication May. 8, 2001
6143070 Silicon-germanium bulk alloy growth by liquid encapsulated zone melting Nov. 7, 2000
6143659 Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method Nov. 7, 2000
6039803 Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon Mar. 21, 2000
6037614 Methods for manufacturing group IV element alloy semiconductor materials and devices that include such materials Mar. 14, 2000
6022410 Alkaline-earth metal silicides on silicon Feb. 8, 2000
6007623 Method for making horizontal magnetic recording media having grains of chemically-ordered FePt or CoPt Dec. 28, 1999
5882399 Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect Mar. 16, 1999
5782997 Aluminum metallization for SiGe devices Jul. 21, 1998
5759898 Production of substrate for tensilely strained semiconductor Jun. 2, 1998
5733370 Method of manufacturing a bicrystal cluster magnetic recording medium Mar. 31, 1998
5645638 Method and apparatus for preparing crystalline thin-films for solid-state lasers Jul. 8, 1997
5603766 Method for producing uniaxial tetragonal thin films of ternary intermetallic compounds Feb. 18, 1997

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