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Class Information
Number: 117/937
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10}
Description: A collection of art which discloses growing a single-crystal* comprising an inorganic compound or a mixture or a composite.

Sub-classes under this class:

Class Number Class Name Patents
117/951 Carbide containing (e.g., sic) {c30b 29/36} 200
117/939 Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, sige, insb) {c30b 29/40, 29/52} 160
117/938 Gold, silver, or platinum containing {c30b 29/52} 23
117/940 Halide containing (e.g., fluorphlogopite, fluor-mica) {c30b 29/12} 123
117/952 Nitride containing (e.g., gan, cbn) {c30b 29/38} 323
117/944 Oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16} 179
117/941 Phosphorus-oxygen bond containing (e.g., phosphate (po4)) {c30b 29/14} 44
117/942 Silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mica) {c30b 29/16} 36
117/953 {b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40} 283
117/956 {zn,cd,hg}{s,se,te} compound containing {c30b 29/46} 156

Patents under this class:
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Patent Number Title Of Patent Date Issued
8048222 Highly pure modafinil Nov. 1, 2011
7736433 BaTiO.sub.3--PbTiO.sub.3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator Jun. 15, 2010
7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults Jul. 29, 2008
7396404 Methods for forming alkali halide ingots into rectangular plates Jul. 8, 2008
7332027 Method for manufacturing aluminum nitride single crystal Feb. 19, 2008
7329319 Method for producing crystals and screening crystallization conditions Feb. 12, 2008
7314604 Stable ferric arsenate precipitation from acid copper solutions whilst minimising copper losses Jan. 1, 2008
7314517 Process for obtaining bulk mono-crystalline gallium-containing nitride Jan. 1, 2008
7172654 Preparation of compounds based on phase equilibria of Cu-In-Se Feb. 6, 2007
7090724 Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device Aug. 15, 2006
7014703 Method for annealing group IIA metal fluoride crystals Mar. 21, 2006
6989060 Calcium fluoride crystal and method and apparatus for using the same Jan. 24, 2006
6918960 CVD of PtRh with good adhesion and morphology Jul. 19, 2005
6849120 Oxidation method for preparing highly pure modafinil, crystalline forms of modafinil, and methods of preparing the crystalline forms Feb. 1, 2005
6830740 Method for producing solar cell and solar cell Dec. 14, 2004
6793732 Method and kit for growing cross-shaped crystals Sep. 21, 2004
6596077 Controlled nucleation of protein crystals Jul. 22, 2003
6558465 Single-crystal optical element having flat light-transmitting end surface inclined relative to cleavage May. 6, 2003
6514336 Method of growing piezoelectric lanthanide gallium crystals Feb. 4, 2003
6498288 Silicon germanium crystal Dec. 24, 2002
6464778 Tungsten deposition process Oct. 15, 2002
6452189 Ammonium nickel sulfate crystals Sep. 17, 2002
6413442 Method of producing single crystal and piezoelectric element Jul. 2, 2002
6368402 Method for growing crystals Apr. 9, 2002
6332922 Manufacturing method for calcium fluoride and calcium fluoride for photolithography Dec. 25, 2001
6143659 Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method Nov. 7, 2000
6071337 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method Jun. 6, 2000
6045611 Method of manufacturing a LiGaO.sub.2 single-crystal substrate Apr. 4, 2000
6017390 Growth of oriented crystals at polymerized membranes Jan. 25, 2000
6007916 Synthetic single crystal diamond for wiring drawing dies and process for producing the same Dec. 28, 1999
5968261 Method for growing large silicon carbide single crystals Oct. 19, 1999
5961714 Method of growing lutetium aluminum perovskite crystals and apparatus including lutetium aluminum perovskite crystal scintillators Oct. 5, 1999
5916363 Oriented molybdenum or tungsten single crystal and manufacturing method thereof Jun. 29, 1999
5891828 Method of producing superconducting PrBa.sub.2 Cu.sub.3 O.sub.y single crystal and PrBa.sub.2 Cu.sub.3 O.sub.y superconducting device Apr. 6, 1999
5865888 Semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 Feb. 2, 1999
5792253 Forging cylindrical ingots of alkali halides Aug. 11, 1998
5728212 Method of preparing compound semiconductor crystal Mar. 17, 1998
5693140 Process for growing a film epitaxially upon a MgO surface Dec. 2, 1997
5667583 Method of producing a single crystal of a rare-earth silicate Sep. 16, 1997
5650007 Method for production of spinel single crystal filaments Jul. 22, 1997
5611856 Method for growing crystals Mar. 18, 1997
5611854 Seed crystals with improved properties for melt processing superconductors for practical applications Mar. 18, 1997
5612014 Compound semiconductor crystal Mar. 18, 1997
5597411 Method of forming a single crystal material Jan. 28, 1997
5565131 Bismuth-substituted rare earth iron garnet single crystal Oct. 15, 1996
5558815 Single crystal of compound, laser rod, laser oscillator, scintillator, CT scanner, color display and process for preparing the same Sep. 24, 1996
5482001 Process for producing lithium niobate single crystal Jan. 9, 1996
5454346 Process for growing multielement compound single crystal Oct. 3, 1995
5431124 Rutile single crystals and their growth processes Jul. 11, 1995
5381756 Magnesium doping in III-V compound semiconductor Jan. 17, 1995

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