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Class Information
Number: 117/936
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Single-crystal of pure or intentionally doped element {c30b 29/02} > Germanium {c30b 29/08}
Description: A collection of art under the art collection 928 disclosing growing germanium single-crystal*.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7479443 |
Germanium deposition |
Jan. 20, 2009 |
| 7344596 |
System and method for crystal growing |
Mar. 18, 2008 |
| 7329593 |
Germanium deposition |
Feb. 12, 2008 |
| 7267721 |
Method for preparing group IV nanocrystals with chemically accessible surfaces |
Sep. 11, 2007 |
| 7232487 |
Method for making an epitaxial germanium temperature sensor |
Jun. 19, 2007 |
| 7226504 |
Method to form thick relaxed SiGe layer with trench structure |
Jun. 5, 2007 |
| 7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
May. 15, 2007 |
| 6635110 |
Cyclic thermal anneal for dislocation reduction |
Oct. 21, 2003 |
| 6596077 |
Controlled nucleation of protein crystals |
Jul. 22, 2003 |
| 6287381 |
Crystal growth process for large area GaAs with controllable resistivity and infrared window/dome with EMI-EMP protection formed therefrom |
Sep. 11, 2001 |
| 6273949 |
Method for fabricating orientation-patterned gallium arsenide seeding structures |
Aug. 14, 2001 |
| 6090666 |
Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal |
Jul. 18, 2000 |
| 5900054 |
Method of manufacturing oxide single crystal |
May. 4, 1999 |
| 5785756 |
Process for fabricating structurally robust optical coatings |
Jul. 28, 1998 |
| 5628834 |
Surfactant-enhanced epitaxy |
May. 13, 1997 |
| 5513593 |
Liquid-phase heteroepitaxy method |
May. 7, 1996 |
| 5379712 |
Method of epitaxially growing thin films using ion implantation |
Jan. 10, 1995 |
| 5336360 |
Laser assisted fiber growth |
Aug. 9, 1994 |
| 5316615 |
Surfactant-enhanced epitaxy |
May. 31, 1994 |
| 5294285 |
Process for the production of functional crystalline film |
Mar. 15, 1994 |
| 5292487 |
Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor |
Mar. 8, 1994 |
| 5286334 |
Nonselective germanium deposition by UHV/CVD |
Feb. 15, 1994 |
| 5259918 |
Heteroepitaxial growth of germanium on silicon by UHV/CVD |
Nov. 9, 1993 |
| 5232868 |
Method for forming a thin semiconductor film |
Aug. 3, 1993 |
| 5232547 |
Simultaneously measuring thickness and composition of a film |
Aug. 3, 1993 |
| 5225366 |
Apparatus for and a method of growing thin films of elemental semiconductors |
Jul. 6, 1993 |
| 5207863 |
Crystal growth method and crystalline article obtained by said method |
May. 4, 1993 |
| 5205871 |
Monocrystalline germanium film on sapphire |
Apr. 27, 1993 |
| 5164040 |
Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets |
Nov. 17, 1992 |
| 5135887 |
Boron source for silicon molecular beam epitaxy |
Aug. 4, 1992 |
| 5091333 |
Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth |
Feb. 25, 1992 |
| 5069740 |
Production of semiconductor grade silicon spheres from metallurgical grade silicon particles |
Dec. 3, 1991 |
| 5009860 |
Semiconductor rod zone melting apparatus |
Apr. 23, 1991 |
| 4931132 |
Optical control of deposition of crystal monolayers |
Jun. 5, 1990 |
| 4894206 |
Crystal pulling apparatus |
Jan. 16, 1990 |
| 4857278 |
Control system for the czochralski process |
Aug. 15, 1989 |
| 4843030 |
Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
Jun. 27, 1989 |
| 4818500 |
Method of and apparatus for growing crystals |
Apr. 4, 1989 |
| 4800173 |
Process for preparing Si or Ge epitaxial film using fluorine oxidant |
Jan. 24, 1989 |
| 4786616 |
Method for heteroepitaxial growth using multiple MBE chambers |
Nov. 22, 1988 |
| 4784715 |
Methods and apparatus for producing coherent or monolithic elements |
Nov. 15, 1988 |
| 4757030 |
Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth |
Jul. 12, 1988 |
| 4743567 |
Method of forming thin, defect-free, monocrystalline layers of semiconductor materials on insulators |
May. 10, 1988 |
| 4738831 |
Method and apparatus for growing crystals |
Apr. 19, 1988 |
| 4721688 |
Method of growing crystals |
Jan. 26, 1988 |
| 4708764 |
Method of and apparatus for growing crystals |
Nov. 24, 1987 |
| 4707217 |
Single crystal thin films |
Nov. 17, 1987 |
| 4659421 |
System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
Apr. 21, 1987 |
| 4650540 |
Methods and apparatus for producing coherent or monolithic elements |
Mar. 17, 1987 |
| 4600564 |
Machine for pulling monocrystals |
Jul. 15, 1986 |
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