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Class Information
Number: 117/936
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Single-crystal of pure or intentionally doped element {c30b 29/02} > Germanium {c30b 29/08}
Description: A collection of art under the art collection 928 disclosing growing germanium single-crystal*.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8476152 N-type carrier enhancement in semiconductors Jul. 2, 2013
7906413 Abrupt "delta-like" doping in Si and SiGe films by UHV-CVD Mar. 15, 2011
7479443 Germanium deposition Jan. 20, 2009
7344596 System and method for crystal growing Mar. 18, 2008
7329593 Germanium deposition Feb. 12, 2008
7267721 Method for preparing group IV nanocrystals with chemically accessible surfaces Sep. 11, 2007
7232487 Method for making an epitaxial germanium temperature sensor Jun. 19, 2007
7226504 Method to form thick relaxed SiGe layer with trench structure Jun. 5, 2007
7217322 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer May. 15, 2007
6635110 Cyclic thermal anneal for dislocation reduction Oct. 21, 2003
6596077 Controlled nucleation of protein crystals Jul. 22, 2003
6287381 Crystal growth process for large area GaAs with controllable resistivity and infrared window/dome with EMI-EMP protection formed therefrom Sep. 11, 2001
6273949 Method for fabricating orientation-patterned gallium arsenide seeding structures Aug. 14, 2001
6090666 Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal Jul. 18, 2000
5900054 Method of manufacturing oxide single crystal May. 4, 1999
5785756 Process for fabricating structurally robust optical coatings Jul. 28, 1998
5628834 Surfactant-enhanced epitaxy May. 13, 1997
5513593 Liquid-phase heteroepitaxy method May. 7, 1996
5379712 Method of epitaxially growing thin films using ion implantation Jan. 10, 1995
5336360 Laser assisted fiber growth Aug. 9, 1994
5316615 Surfactant-enhanced epitaxy May. 31, 1994
5294285 Process for the production of functional crystalline film Mar. 15, 1994
5292487 Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor Mar. 8, 1994
5286334 Nonselective germanium deposition by UHV/CVD Feb. 15, 1994
5259918 Heteroepitaxial growth of germanium on silicon by UHV/CVD Nov. 9, 1993
5232868 Method for forming a thin semiconductor film Aug. 3, 1993
5232547 Simultaneously measuring thickness and composition of a film Aug. 3, 1993
5225366 Apparatus for and a method of growing thin films of elemental semiconductors Jul. 6, 1993
5207863 Crystal growth method and crystalline article obtained by said method May. 4, 1993
5205871 Monocrystalline germanium film on sapphire Apr. 27, 1993
5164040 Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets Nov. 17, 1992
5135887 Boron source for silicon molecular beam epitaxy Aug. 4, 1992
5091333 Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth Feb. 25, 1992
5069740 Production of semiconductor grade silicon spheres from metallurgical grade silicon particles Dec. 3, 1991
5009860 Semiconductor rod zone melting apparatus Apr. 23, 1991
4931132 Optical control of deposition of crystal monolayers Jun. 5, 1990
4894206 Crystal pulling apparatus Jan. 16, 1990
4857278 Control system for the czochralski process Aug. 15, 1989
4843030 Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes Jun. 27, 1989
4818500 Method of and apparatus for growing crystals Apr. 4, 1989
4800173 Process for preparing Si or Ge epitaxial film using fluorine oxidant Jan. 24, 1989
4786616 Method for heteroepitaxial growth using multiple MBE chambers Nov. 22, 1988
4784715 Methods and apparatus for producing coherent or monolithic elements Nov. 15, 1988
4757030 Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth Jul. 12, 1988
4743567 Method of forming thin, defect-free, monocrystalline layers of semiconductor materials on insulators May. 10, 1988
4738831 Method and apparatus for growing crystals Apr. 19, 1988
4721688 Method of growing crystals Jan. 26, 1988
4708764 Method of and apparatus for growing crystals Nov. 24, 1987
4707217 Single crystal thin films Nov. 17, 1987
4659421 System for growth of single crystal materials with extreme uniformity in their structural and electrical properties Apr. 21, 1987

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