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Class Information
Number: 117/932
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Single-crystal of pure or intentionally doped element {c30b 29/02} > Silicon from liquid or supercritical state {c30b 29/06} > By pulling {c30b 29/06}
Description: A collection of art under art collection 931 disclosing growing silicon single-crystal* grown from the liquid or supercritical state by a pulling technique.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7621996 |
Silicon wafer and method for producing same |
Nov. 24, 2009 |
| 7594966 |
Method for producing a single crystal |
Sep. 29, 2009 |
| 7582160 |
Silicone single crystal production process |
Sep. 1, 2009 |
| 7550042 |
Method and apparatus for crystallization |
Jun. 23, 2009 |
| 7473314 |
Method for growing silicon single crystal |
Jan. 6, 2009 |
| 7442251 |
Method for producing silicon single crystals and silicon single crystal produced thereby |
Oct. 28, 2008 |
| 7431764 |
Method for pulling up single crystal |
Oct. 7, 2008 |
| 7399356 |
Method for preparation of ferroelectric single crystal film structure using deposition method |
Jul. 15, 2008 |
| 7387676 |
Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties |
Jun. 17, 2008 |
| 7374741 |
Method for growing silicon single crystal and silicon wafer |
May. 20, 2008 |
| 7364617 |
Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
Apr. 29, 2008 |
| 7344596 |
System and method for crystal growing |
Mar. 18, 2008 |
| 7282094 |
Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal |
Oct. 16, 2007 |
| 7244306 |
Method for measuring point defect distribution of silicon single crystal ingot |
Jul. 17, 2007 |
| 7229693 |
Low defect density, ideal oxygen precipitating silicon |
Jun. 12, 2007 |
| 7214267 |
Silicon single crystal and method for growing silicon single crystal |
May. 8, 2007 |
| 7204881 |
Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it |
Apr. 17, 2007 |
| 7160387 |
High purity silica crucible by electrolytic refining, and its production method and pulling method |
Jan. 9, 2007 |
| 7135069 |
Coating silicon pellets with dopant for addition of dopant in crystal growth |
Nov. 14, 2006 |
| 7132091 |
Single crystal silicon ingot having a high arsenic concentration |
Nov. 7, 2006 |
| 7122082 |
Silicon wafer and manufacturing method thereof |
Oct. 17, 2006 |
| 7118789 |
Silica glass crucible |
Oct. 10, 2006 |
| 7097718 |
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects |
Aug. 29, 2006 |
| 7074271 |
Method of identifying defect distribution in silicon single crystal ingot |
Jul. 11, 2006 |
| 7014704 |
Method for growing silicon single crystal |
Mar. 21, 2006 |
| 6986925 |
Single crystal silicon having improved gate oxide integrity |
Jan. 17, 2006 |
| 6913646 |
Silicon single crystal wafer and method for producing silicon single crystal |
Jul. 5, 2005 |
| 6908509 |
CZ raw material supply method |
Jun. 21, 2005 |
| 6905771 |
Silicon wafer |
Jun. 14, 2005 |
| 6896727 |
Method of determining nitrogen concentration within a wafer |
May. 24, 2005 |
| 6866713 |
Seed crystals for pulling single crystal silicon |
Mar. 15, 2005 |
| 6858307 |
Method for the production of low defect density silicon |
Feb. 22, 2005 |
| 6849119 |
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
Feb. 1, 2005 |
| 6846539 |
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
Jan. 25, 2005 |
| 6843847 |
Silicon single crystal wafer and production method thereof and soi wafer |
Jan. 18, 2005 |
| 6808781 |
Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same |
Oct. 26, 2004 |
| 6800132 |
Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer |
Oct. 5, 2004 |
| 6780238 |
Argon/ammonia rapid thermal annealing for silicon wafers |
Aug. 24, 2004 |
| 6740158 |
Process for coating silicon shot with dopant for addition of dopant in crystal growth |
May. 25, 2004 |
| 6663710 |
Method for continuously pulling up crystal |
Dec. 16, 2003 |
| 6652645 |
Process for preparing a silicon melt |
Nov. 25, 2003 |
| 6652646 |
Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions |
Nov. 25, 2003 |
| 6638357 |
Method for revealing agglomerated intrinsic point defects in semiconductor crystals |
Oct. 28, 2003 |
| 6605150 |
Low defect density regions of self-interstitial dominated silicon |
Aug. 12, 2003 |
| 6599603 |
Silicon wafer |
Jul. 29, 2003 |
| 6586068 |
Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof |
Jul. 1, 2003 |
| 6569535 |
Silicon wafer and epitaxial silicon wafer utilizing same |
May. 27, 2003 |
| 6565649 |
Epitaxial wafer substantially free of grown-in defects |
May. 20, 2003 |
| 6555194 |
Process for producing low defect density, ideal oxygen precipitating silicon |
Apr. 29, 2003 |
| 6544332 |
Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer |
Apr. 8, 2003 |
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