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Class Information
Number: 117/93
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) > With significant flow manipulation or condition, other than merely specifying the components or their sequence or both
Description: Subject matter in which significant gas or vapor flow manipulation or condition, other than merely specifying the components of precursors*, or their sequence, or both, is specified.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615116 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
Nov. 10, 2009 |
| 7608539 |
ALD method and apparatus |
Oct. 27, 2009 |
| 7601215 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films |
Oct. 13, 2009 |
| 7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Jun. 30, 2009 |
| 7547359 |
Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
Jun. 16, 2009 |
| 7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth |
Apr. 28, 2009 |
| 7488386 |
Atomic layer deposition methods and chemical vapor deposition methods |
Feb. 10, 2009 |
| 7449065 |
Method for the growth of large low-defect single crystals |
Nov. 11, 2008 |
| 7442252 |
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element |
Oct. 28, 2008 |
| 7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
Oct. 21, 2008 |
| 7431964 |
Method of forming a porous metal catalyst on a substrate for nanotube growth |
Oct. 7, 2008 |
| 7416605 |
Anneal of epitaxial layer in a semiconductor device |
Aug. 26, 2008 |
| 7402206 |
Method of synthesizing a compound of the formula M.sub.n+1AX.sub.n, film of the compound and its use |
Jul. 22, 2008 |
| 7393412 |
Method for manufacturing compound semiconductor epitaxial substrate |
Jul. 1, 2008 |
| 7374617 |
Atomic layer deposition methods and chemical vapor deposition methods |
May. 20, 2008 |
| 7335259 |
Growth of single crystal nanowires |
Feb. 26, 2008 |
| 7311777 |
Process for manufacturing quartz crystal element |
Dec. 25, 2007 |
| 7309394 |
Ultraviolet light-emitting device in which p-type semiconductor is used |
Dec. 18, 2007 |
| 7294360 |
Conformal coatings for micro-optical elements, and method for making the same |
Nov. 13, 2007 |
| 7250083 |
ALD method and apparatus |
Jul. 31, 2007 |
| 7229498 |
Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys |
Jun. 12, 2007 |
| 7229501 |
Silicon epitaxial wafer and process for manufacturing the same |
Jun. 12, 2007 |
| 7217324 |
Method and device for producing an electronic GaAs detector for x-ray detection for imaging |
May. 15, 2007 |
| 7153363 |
Atomic layer deposition |
Dec. 26, 2006 |
| 7150789 |
Atomic layer deposition methods |
Dec. 19, 2006 |
| 7147715 |
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
Dec. 12, 2006 |
| 7141499 |
Apparatus and method for growth of a thin film |
Nov. 28, 2006 |
| 7135071 |
Fractal structure and method of forming it |
Nov. 14, 2006 |
| 7128787 |
Atomic layer deposition method |
Oct. 31, 2006 |
| 7105054 |
Method and apparatus of growing a thin film onto a substrate |
Sep. 12, 2006 |
| 7101434 |
Fractal structure and its forming method |
Sep. 5, 2006 |
| 7094289 |
Method for manufacturing highly-crystallized oxide powder |
Aug. 22, 2006 |
| 7060132 |
Method and apparatus of growing a thin film |
Jun. 13, 2006 |
| 7033436 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Apr. 25, 2006 |
| 7014710 |
Method of growing single crystal Gallium Nitride on silicon substrate |
Mar. 21, 2006 |
| 7011706 |
Device substrate and method for producing device substrate |
Mar. 14, 2006 |
| 7011707 |
Production method for semiconductor substrate and semiconductor element |
Mar. 14, 2006 |
| 7001460 |
Semiconductor element and its manufacturing method |
Feb. 21, 2006 |
| 7001459 |
Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy |
Feb. 21, 2006 |
| 6994751 |
Nitride-based semiconductor element and method of forming nitride-based semiconductor |
Feb. 7, 2006 |
| RE38937 |
Susceptor for vapor-phase growth apparatus |
Jan. 24, 2006 |
| 6972050 |
Method for depositing in particular crystalline layers, and device for carrying out the method |
Dec. 6, 2005 |
| 6932866 |
Method for depositing in particular crystalline layers |
Aug. 23, 2005 |
| 6923860 |
Oxidation of material for tunnel magneto-resistive sensors |
Aug. 2, 2005 |
| 6902620 |
Atomic layer deposition systems and methods |
Jun. 7, 2005 |
| 6896730 |
Atomic layer deposition apparatus and methods |
May. 24, 2005 |
| 6875272 |
Method for preparing GaN based compound semiconductor crystal |
Apr. 5, 2005 |
| 6869481 |
Method and device for regulating the differential pressure in epitaxy reactors |
Mar. 22, 2005 |
| 6869480 |
Method for the production of nanometer scale step height reference specimens |
Mar. 22, 2005 |
| 6863727 |
Method of depositing transition metal nitride thin films |
Mar. 8, 2005 |
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