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Class Information
Number: 117/928
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Single-crystal of pure or intentionally doped element {c30b 29/02}
Description: A collection of art which discloses growing a pure or intentionally doped* single-crystal* of an element.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7341787 |
Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers |
Mar. 11, 2008 |
| 7303626 |
Three-dimensional periodic structure and method for producing the same |
Dec. 4, 2007 |
| 7273647 |
Silicon annealed wafer and silicon epitaxial wafer |
Sep. 25, 2007 |
| 7160617 |
Boron doped diamond |
Jan. 9, 2007 |
| 7132091 |
Single crystal silicon ingot having a high arsenic concentration |
Nov. 7, 2006 |
| 6905544 |
Manufacturing method for a carbon nanomaterial, a manufacturing apparatus for a carbon nanomaterial, and manufacturing facility for a carbon nanomaterial |
Jun. 14, 2005 |
| 6858307 |
Method for the production of low defect density silicon |
Feb. 22, 2005 |
| 6846539 |
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
Jan. 25, 2005 |
| 6780238 |
Argon/ammonia rapid thermal annealing for silicon wafers |
Aug. 24, 2004 |
| 6743495 |
Thermal annealing process for producing silicon wafers with improved surface characteristics |
Jun. 1, 2004 |
| 6641888 |
Silicon single crystal, silicon wafer, and epitaxial wafer. |
Nov. 4, 2003 |
| 6620347 |
Crystalline filters for ultraviolet light sensors |
Sep. 16, 2003 |
| 6586068 |
Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof |
Jul. 1, 2003 |
| 6579589 |
Semiconductor wafer with crystal lattice defects, and process for producing this semiconductor wafer |
Jun. 17, 2003 |
| 6521316 |
single crystalline silicon wafer, ingot, and producing method thereof |
Feb. 18, 2003 |
| 6472040 |
Semi-pure and pure monocrystalline silicon ingots and wafers |
Oct. 29, 2002 |
| 6296956 |
Bulk single crystals of aluminum nitride |
Oct. 2, 2001 |
| 6284384 |
Epitaxial silicon wafer with intrinsic gettering |
Sep. 4, 2001 |
| 6238478 |
Silicon single crystal and process for producing single-crystal silicon thin film |
May. 29, 2001 |
| 5902519 |
Process for oxidizing iron-doped lithium niobate |
May. 11, 1999 |
| 5891242 |
Apparatus and method for determining an epitaxial layer thickness and transition width |
Apr. 6, 1999 |
| 5782997 |
Aluminum metallization for SiGe devices |
Jul. 21, 1998 |
| 5728213 |
Method of growing a rare earth silicate single crystal |
Mar. 17, 1998 |
| 5653801 |
Method for reducing contamination in semiconductor by selenium doping |
Aug. 5, 1997 |
| 5565030 |
Method for the preparation of a superlattice multilayered film |
Oct. 15, 1996 |
| 5558711 |
Electrode forming method for surface acoustic wave device |
Sep. 24, 1996 |
| 5501174 |
Aluminum metallization for sige devices |
Mar. 26, 1996 |
| 5497726 |
Method of manufacturing a surface acoustic wave element |
Mar. 12, 1996 |
| 5423283 |
Method for growing antimony-doped silicon single crystal |
Jun. 13, 1995 |
| 5336360 |
Laser assisted fiber growth |
Aug. 9, 1994 |
| 5320703 |
Process for forming gold crystal film |
Jun. 14, 1994 |
| 5298109 |
Process for the production of metal wafers and the use of silicon wafers |
Mar. 29, 1994 |
| 5262361 |
Via filling by single crystal aluminum |
Nov. 16, 1993 |
| 5259915 |
Organometallic compounds |
Nov. 9, 1993 |
| 5254211 |
Method for forming crystals |
Oct. 19, 1993 |
| 5238526 |
Method of forming charge transfer complexes |
Aug. 24, 1993 |
| 5229332 |
Method for the growth of epitaxial metal-insulator-metal-semiconductor structures |
Jul. 20, 1993 |
| 5225366 |
Apparatus for and a method of growing thin films of elemental semiconductors |
Jul. 6, 1993 |
| 5208187 |
Metal film forming method |
May. 4, 1993 |
| 5176557 |
Electron emission element and method of manufacturing the same |
Jan. 5, 1993 |
| 5152864 |
Method of manufacturing surface acoustic wave device |
Oct. 6, 1992 |
| 5112699 |
Metal-metal epitaxy on substrates and method of making |
May. 12, 1992 |
| 5069743 |
Orientation control of float-zone grown TiC crystals |
Dec. 3, 1991 |
| 4880492 |
Organometallic compounds |
Nov. 14, 1989 |
| 4775443 |
Method and apparatus for zone regrowth of crystal ribbons from bulk material |
Oct. 4, 1988 |
| 4758534 |
Process for producing porous refractory metal layers embedded in semiconductor devices |
Jul. 19, 1988 |
| 4728389 |
Particulate-free epitaxial process |
Mar. 1, 1988 |
| 4722763 |
Method for making irregular shaped single crystal particles for use in anodes for electrochemical cells |
Feb. 2, 1988 |
| 4584054 |
Solids refining process |
Apr. 22, 1986 |
| 4487651 |
Method for making irregular shaped single crystal particles and the use thereof in anodes for electrochemical cells |
Dec. 11, 1984 |
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