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Class Information
Number: 117/913
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Graphoepitaxy or surface modification to enhance epitaxy
Description: A collection of art which discloses modifying the surface of an epitaxy* substrate* to enhance or improve the growth or the product.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6958093 |
Free-standing (Al, Ga, In)N and parting method for forming same |
Oct. 25, 2005 |
| 6752868 |
Layer-by-layer assembly of photonic crystals |
Jun. 22, 2004 |
| 6656271 |
Method of manufacturing semiconductor wafer method of using and utilizing the same |
Dec. 2, 2003 |
| 6270573 |
Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate |
Aug. 7, 2001 |
| 6165265 |
Method of deposition of a single-crystal silicon region |
Dec. 26, 2000 |
| 6146457 |
Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
Nov. 14, 2000 |
| 6110278 |
Methods for and products of growth of single-crystal on arrayed nucleation sites (SCANS) defined in nucleation unfriendly substrates |
Aug. 29, 2000 |
| 6103019 |
Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces |
Aug. 15, 2000 |
| 6096129 |
Method of and apparatus for producing single-crystalline diamond of large size |
Aug. 1, 2000 |
| 6036773 |
Method for growing Group III atomic layer |
Mar. 14, 2000 |
| 5948162 |
Method for forming SOI structure |
Sep. 7, 1999 |
| 5919305 |
Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature |
Jul. 6, 1999 |
| 5865888 |
Semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 |
Feb. 2, 1999 |
| 5861058 |
Composite structure and method for the production thereof |
Jan. 19, 1999 |
| 5817174 |
Semiconductor substrate and method of treating semiconductor substrate |
Oct. 6, 1998 |
| 5746826 |
Method and apparatus for forming microstructure body |
May. 5, 1998 |
| 5741360 |
Method of growing a crystal of a compound semiconductor at a low temperature |
Apr. 21, 1998 |
| 5738720 |
Method of manufacturing microstructure pattern of molecular material high orientation aggregate with the aid of difference of growth rate by substrate material |
Apr. 14, 1998 |
| 5718761 |
Method of forming crystalline compound semiconductor film |
Feb. 17, 1998 |
| 5676752 |
Method of producing sheets of crystalline material and devices made therefrom |
Oct. 14, 1997 |
| 5656539 |
Method of fabricating a semiconductor laser |
Aug. 12, 1997 |
| 5632812 |
Diamond electronic device and process for producing the same |
May. 27, 1997 |
| 5591666 |
Semiconductor device and method of fabrication |
Jan. 7, 1997 |
| 5588994 |
Method of producing sheets of crystalline material and devices made therefrom |
Dec. 31, 1996 |
| 5582641 |
Crystal article and method for forming same |
Dec. 10, 1996 |
| 5531182 |
Method of making a semiconductor thin-film |
Jul. 2, 1996 |
| 5518953 |
Method for manufacturing semiconductor device having grown layer on insulating layer |
May. 21, 1996 |
| 5482002 |
Microprobe, preparation thereof and electronic device by use of said microprobe |
Jan. 9, 1996 |
| 5447117 |
Crystal article, method for producing the same and semiconductor device utilizing the same |
Sep. 5, 1995 |
| 5445108 |
Process and apparatus for the crystallization of a melt |
Aug. 29, 1995 |
| 5427055 |
Method for controlling roughness on surface of monocrystal |
Jun. 27, 1995 |
| 5425808 |
Process for selective formation of III-IV group compound film |
Jun. 20, 1995 |
| 5422302 |
Method for producing a three-dimensional semiconductor device |
Jun. 6, 1995 |
| 5373803 |
Method of epitaxial growth of semiconductor |
Dec. 20, 1994 |
| 5363799 |
Method for growth of crystal |
Nov. 15, 1994 |
| 5363800 |
Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers |
Nov. 15, 1994 |
| 5364815 |
Crystal articles and method for forming the same |
Nov. 15, 1994 |
| 5326721 |
Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer |
Jul. 5, 1994 |
| 5318661 |
Process for growing crystalline thin film |
Jun. 7, 1994 |
| 5310696 |
Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth |
May. 10, 1994 |
| 5228948 |
Method for fabricating recrystallized semiconductor film |
Jul. 20, 1993 |
| 5219769 |
Method for forming Schottky diode |
Jun. 15, 1993 |
| 5205900 |
Method of monitoring surface roughness of crystal, and crystal growth equipment |
Apr. 27, 1993 |
| 5198070 |
Joining diamond bodies |
Mar. 30, 1993 |
| 5196366 |
Method of manufacturing electric devices |
Mar. 23, 1993 |
| 5118365 |
II-IV group compound crystal article and process for producing same |
Jun. 2, 1992 |
| 5098850 |
Process for producing substrate for selective crystal growth, selective crystal growth process and process for producing solar battery by use of them |
Mar. 24, 1992 |
| 5087296 |
Solar battery and process for preparing same |
Feb. 11, 1992 |
| 5075238 |
Detector interface device |
Dec. 24, 1991 |
| 5039626 |
Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material |
Aug. 13, 1991 |
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