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Class Information
Number: 117/91
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) > With a chemical reaction (except ionization) in a disparate zone to form a precursor
Description: Subject matter including a step of forming a precursor*, including dopant* precursor*, by a chemical reaction* (except ionization) in a location separate from the deposition zone.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608539 |
ALD method and apparatus |
Oct. 27, 2009 |
| 7566364 |
Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same |
Jul. 28, 2009 |
| 7556688 |
Method for achieving low defect density AlGaN single crystal boules |
Jul. 7, 2009 |
| 7553369 |
Method of altering the properties of a thin film and substrate implementing said method |
Jun. 30, 2009 |
| 7501023 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
Mar. 10, 2009 |
| 7488385 |
Method for epitaxial growth of a gallium nitride film separated from its substrate |
Feb. 10, 2009 |
| 7481881 |
Method of manufacturing GaN crystal substrate |
Jan. 27, 2009 |
| 7455729 |
Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
Nov. 25, 2008 |
| 7438761 |
Apparatus for fabricating a III-V nitride film and a method for fabricating the same |
Oct. 21, 2008 |
| 7402206 |
Method of synthesizing a compound of the formula M.sub.n+1AX.sub.n, film of the compound and its use |
Jul. 22, 2008 |
| 7399357 |
Atomic layer deposition using multilayers |
Jul. 15, 2008 |
| 7381267 |
Heteroatomic single-crystal layers |
Jun. 3, 2008 |
| 7371281 |
Silicon carbide single crystal and method and apparatus for producing the same |
May. 13, 2008 |
| 7361220 |
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
Apr. 22, 2008 |
| 7357837 |
GaN single crystal substrate and method of making the same |
Apr. 15, 2008 |
| 7332030 |
Method of treating a part in order to alter at least one of the properties thereof |
Feb. 19, 2008 |
| 7288153 |
Method of fabricating orientation film for crystal display device |
Oct. 30, 2007 |
| 7261776 |
Deposition of buffer layers on textured metal surfaces |
Aug. 28, 2007 |
| 7250083 |
ALD method and apparatus |
Jul. 31, 2007 |
| 7235129 |
Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof |
Jun. 26, 2007 |
| 7232488 |
Method of fabrication of a substrate for an epitaxial growth |
Jun. 19, 2007 |
| 7182811 |
Semiconductor light emitting device and method for producing the same |
Feb. 27, 2007 |
| 7147713 |
Phase controlled sublimation |
Dec. 12, 2006 |
| 7128785 |
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates |
Oct. 31, 2006 |
| 7101435 |
Methods for epitaxial silicon growth |
Sep. 5, 2006 |
| 7094289 |
Method for manufacturing highly-crystallized oxide powder |
Aug. 22, 2006 |
| 7033437 |
Method for making semiconductor device including band-engineered superlattice |
Apr. 25, 2006 |
| 6955719 |
Manufacturing methods for semiconductor devices with multiple III-V material layers |
Oct. 18, 2005 |
| 6911083 |
Method for producing powders made of gallium nitride and apparatus for producing the same |
Jun. 28, 2005 |
| 6905541 |
Method and apparatus of generating PDMAT precursor |
Jun. 14, 2005 |
| 6835414 |
Method for producing coated substrates |
Dec. 28, 2004 |
| 6818061 |
Method for growing single crystal GaN on silicon |
Nov. 16, 2004 |
| 6758900 |
Micro three-dimensional structure, production method therefor and production device therefor |
Jul. 6, 2004 |
| 6706119 |
Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE |
Mar. 16, 2004 |
| 6613143 |
Method for fabricating bulk GaN single crystals |
Sep. 2, 2003 |
| 6576054 |
Method for fabricating bulk AlGaN single crystals |
Jun. 10, 2003 |
| 6426320 |
Low vacuum vapor process for producing superconductor articles with epitaxial layers |
Jul. 30, 2002 |
| 6193797 |
Method of making SiC single crystal and apparatus for making SiC single crystal |
Feb. 27, 2001 |
| 6139628 |
Method of forming gallium nitride crystal |
Oct. 31, 2000 |
| 6124209 |
Method for treating a surface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film |
Sep. 26, 2000 |
| 6103009 |
Fabrication process for a SOI substrate |
Aug. 15, 2000 |
| 6028020 |
Single crystal quartz thin film and preparation thereof |
Feb. 22, 2000 |
| 6022832 |
Low vacuum vapor process for producing superconductor articles with epitaxial layers |
Feb. 8, 2000 |
| 6013130 |
Process and device for the production of epitaxial layers |
Jan. 11, 2000 |
| 5997638 |
Localized lattice-mismatch-accomodation dislocation network epitaxy |
Dec. 7, 1999 |
| 5904769 |
Epitaxial growth method |
May. 18, 1999 |
| 5554220 |
Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities |
Sep. 10, 1996 |
| 5483919 |
Atomic layer epitaxy method and apparatus |
Jan. 16, 1996 |
| 5404836 |
Method and apparatus for continuous controlled production of single crystal whiskers |
Apr. 11, 1995 |
| 5400740 |
Method of preparing compound semiconductor |
Mar. 28, 1995 |
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