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Class Information
Number: 117/906
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Special atmosphere other than vacuum or inert
Description: A collection of art which discloses providing or maintaining a specified atmosphere, other than vacuum or inert, during single-crystal* growing.










Sub-classes under this class:

Class Number Class Name Patents
117/907 Refluxing atmosphere 18


Patents under this class:
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Patent Number Title Of Patent Date Issued
8137457 One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection Mar. 20, 2012
7618491 Scintillator single crystal and production method of same Nov. 17, 2009
7531036 Single crystal heat treatment method May. 12, 2009
7229493 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same Jun. 12, 2007
7220313 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient May. 22, 2007
7147714 Manufacturing method of silicon carbide single crystals Dec. 12, 2006
6811606 Manufacturing method for calcium fluoride and calcium fluoride for photolithography Nov. 2, 2004
6413310 Method for producing silicon single crystal wafer and silicon single crystal wafer Jul. 2, 2002
6391109 Method of making SiC single crystal and apparatus for making SiC single crystal May. 21, 2002
6214109 Apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic Apr. 10, 2001
6051062 Optical single crystal film, process for producing the same and optical element comprising the same Apr. 18, 2000
6027564 Low vacuum vapor process for producing epitaxial layers Feb. 22, 2000
5508207 Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants Apr. 16, 1996
5474020 Oxygen precipitation control in czochralski-grown silicon cyrstals Dec. 12, 1995
5327624 Method for forming a thin film on a semiconductor device using an apparatus having a load lock Jul. 12, 1994
5240685 Apparatus for growing a GaAs single crystal by pulling from GaAs melt Aug. 31, 1993
5234534 Liquid-phase growth process of compound semiconductor Aug. 10, 1993
5215938 Process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals of the group III of the periodic table useful to make electronic devices Jun. 1, 1993
5169799 Method for forming a doped ZnSe single crystal Dec. 8, 1992
5164041 Method of growing rare earth doped orthosilicates(LN2-XREXSIO5) Nov. 17, 1992
5100870 Method of making a superconducting oxide comprising contacting a melt with an oxygen-containing atmosphere Mar. 31, 1992
5091043 Method for monocrystaline growth of dissociative compound semiconductors Feb. 25, 1992
5066610 Capping technique for zone-melting recrystallization of insulated semiconductor films Nov. 19, 1991
5059401 Monocrystal growing apparatus Oct. 22, 1991
5041186 Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas Aug. 20, 1991
4983249 Method for producing semiconductive single crystal Jan. 8, 1991
4961919 Monocrystalline material having garnet structure Oct. 9, 1990
4946544 Crystal growth method Aug. 7, 1990
4944833 Czochralski pulling of monocrystalline lanthanum orthogallate Jul. 31, 1990
4938836 Process for locally increasing the refractive indexes of an electrooptical material usable in guided optics and material obtained by this process Jul. 3, 1990
4909998 Apparatus for performing solution growth of group II-VI compound semiconductor crystal Mar. 20, 1990
4906325 Method of making single-crystal mercury cadmium telluride layers Mar. 6, 1990
4889583 Capping technique for zone-melting recrystallization of insulated semiconductor films Dec. 26, 1989
4888084 Method for the preparation of titanium nitride whiskers Dec. 19, 1989
4888202 Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film Dec. 19, 1989
4872943 Process for making monocrystalline HGCDTE layers Oct. 10, 1989
4866007 Method for preparing single-crystal ZnSe Sep. 12, 1989
4853078 Process for growing a multi-component crystal Aug. 1, 1989
4774195 Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of ac Sep. 27, 1988
4762576 Close space epitaxy process Aug. 9, 1988
4724038 Process for preparing single crystal binary metal oxides of improved purity Feb. 9, 1988
4711696 Process for enhancing Ti:Al.sub.2 O.sub.3 tunable laser crystal fluorescence by controlling crystal growth atmosphere Dec. 8, 1987
4705591 Pulling processes and equipment for growing silicon crystals having high and controlled carbon content Nov. 10, 1987
4664744 Process for the production of bismuth germanate monocrystals with a high scintillation response May. 12, 1987
4650539 Manufacture of cadmium mercury telluride Mar. 17, 1987
4642142 Process for making mercury cadmium telluride Feb. 10, 1987
4619718 Method of manufacturing a Group II-VI semiconductor device having a PN junction Oct. 28, 1986
4601888 Protection of semiconductor substrates during epitaxial growth processes Jul. 22, 1986
4572763 Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof Feb. 25, 1986
4536227 Method of and apparatus for producing a controlled unsaturated vapor pressure of a volatile liquid in a heat treatment chamber Aug. 20, 1985

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