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Class Information
Number: 117/905
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Electron beam
Description: A collection of art which discloses employing an electron beam in the growing of single-crystal*.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7572335 |
Crystallization apparatus and crystallization method |
Aug. 11, 2009 |
| 7341628 |
Method to reduce crystal defects particularly in group III-nitride layers and substrates |
Mar. 11, 2008 |
| 7306670 |
Method for producing monocrystalline structures |
Dec. 11, 2007 |
| 7250081 |
Methods for repair of single crystal superalloys by laser welding and products thereof |
Jul. 31, 2007 |
| 7153359 |
Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof |
Dec. 26, 2006 |
| 6902617 |
Method of welding single crystals |
Jun. 7, 2005 |
| 6743292 |
Oriented conductive oxide electrodes on SiO2/Si and glass |
Jun. 1, 2004 |
| 6589447 |
Compound semiconductor single crystal and fabrication process for compound semiconductor device |
Jul. 8, 2003 |
| 6344082 |
Fabrication method of Si nanocrystals |
Feb. 5, 2002 |
| 5814150 |
Method of and apparatus for forming single-crystalline thin film, beam irradiator, beam irradiating method and beam reflecting device |
Sep. 29, 1998 |
| 5788767 |
Method for forming single sin layer as passivation film |
Aug. 4, 1998 |
| 5409867 |
Method of producing polycrystalline semiconductor thin film |
Apr. 25, 1995 |
| 5352330 |
Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption |
Oct. 4, 1994 |
| 5322589 |
Process and apparatus for recrystallization of semiconductor layer |
Jun. 21, 1994 |
| 5173446 |
Semiconductor substrate manufacturing by recrystallization using a cooling medium |
Dec. 22, 1992 |
| 4942058 |
Process for forming deposited film |
Jul. 17, 1990 |
| 4915772 |
Capping layer for recrystallization process |
Apr. 10, 1990 |
| 4870031 |
Method of manufacturing a semiconductor device |
Sep. 26, 1989 |
| 4847216 |
Process for the deposition by epitaxy of a doped material |
Jul. 11, 1989 |
| 4837182 |
Method of producing sheets of crystalline material |
Jun. 6, 1989 |
| 4800173 |
Process for preparing Si or Ge epitaxial film using fluorine oxidant |
Jan. 24, 1989 |
| 4757030 |
Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth |
Jul. 12, 1988 |
| 4740263 |
Process for preparing thin film and p-type diamond semiconductor |
Apr. 26, 1988 |
| 4727047 |
Method of producing sheets of crystalline material |
Feb. 23, 1988 |
| 4687537 |
Epitaxial metal silicide layers |
Aug. 18, 1987 |
| 4655850 |
Method of forming monocrystalline thin films by parallel beam scanning of belt shaped refractory metal film on amorphous or polycrystalline layer |
Apr. 7, 1987 |
| 4602980 |
Method for improving crystallinity of semiconductor ribbon |
Jul. 29, 1986 |
| 4599133 |
Method of producing single-crystal silicon film |
Jul. 8, 1986 |
| 4592799 |
Method of recrystallizing a polycrystalline, amorphous or small grain material |
Jun. 3, 1986 |
| 4585512 |
Method for making seed crystals for single-crystal semiconductor devices |
Apr. 29, 1986 |
| 4569700 |
Method of manufacturing a stacked semiconductor device |
Feb. 11, 1986 |
| 4564403 |
Single-crystal semiconductor devices and method for making them |
Jan. 14, 1986 |
| 4559102 |
Method for recrystallizing a polycrystalline, amorphous or small grain material |
Dec. 17, 1985 |
| 4555301 |
Formation of heterostructures by pulsed melting of precursor material |
Nov. 26, 1985 |
| 4554045 |
Method for producing metal silicide-silicon heterostructures |
Nov. 19, 1985 |
| 4547256 |
Method for thermally treating a semiconductor substrate |
Oct. 15, 1985 |
| 4510015 |
Method for semiconductor ribbon-to-ribbon conversion |
Apr. 9, 1985 |
| 4498951 |
Method of manufacturing single-crystal film |
Feb. 12, 1985 |
| 4497683 |
Process for producing dielectrically isolated silicon devices |
Feb. 5, 1985 |
| 4446373 |
Process and apparatus for converged fine line electron beam treatment objects |
May. 1, 1984 |
| 4427638 |
Apparatus for semiconductor ribbon-to-ribbon conversion |
Jan. 24, 1984 |
| 4411728 |
Method for manufacture of interdigital periodic structure device |
Oct. 25, 1983 |
| 4406709 |
Method of increasing the grain size of polycrystalline materials by directed energy-beams |
Sep. 27, 1983 |
| 4394210 |
Process for forming a lead film |
Jul. 19, 1983 |
| 4394183 |
Solidification of molten materials |
Jul. 19, 1983 |
| 4383883 |
Method for fabricating semiconductor device |
May. 17, 1983 |
| 4382186 |
Process and apparatus for converged fine line electron beam treatment of objects |
May. 3, 1983 |
| 4351695 |
Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer |
Sep. 28, 1982 |
| 4350561 |
Single crystal processes and products |
Sep. 21, 1982 |
| 4343829 |
Method of fabricating single-crystalline silicon films |
Aug. 10, 1982 |
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