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Browse by Category: Main > Material Science
Class Information
Number: 117/905
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Electron beam
Description: A collection of art which discloses employing an electron beam in the growing of single-crystal*.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8647436 Carbon ion beam growth of isotopically-enriched graphene and isotope-junctions Feb. 11, 2014
8591653 Compound semiconductor single-crystal manufacturing device and manufacturing method Nov. 26, 2013
7682451 PBN container and method for producing PBN container Mar. 23, 2010
7572335 Crystallization apparatus and crystallization method Aug. 11, 2009
7341628 Method to reduce crystal defects particularly in group III-nitride layers and substrates Mar. 11, 2008
7306670 Method for producing monocrystalline structures Dec. 11, 2007
7250081 Methods for repair of single crystal superalloys by laser welding and products thereof Jul. 31, 2007
7153359 Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof Dec. 26, 2006
6902617 Method of welding single crystals Jun. 7, 2005
6743292 Oriented conductive oxide electrodes on SiO2/Si and glass Jun. 1, 2004
6589447 Compound semiconductor single crystal and fabrication process for compound semiconductor device Jul. 8, 2003
6344082 Fabrication method of Si nanocrystals Feb. 5, 2002
5814150 Method of and apparatus for forming single-crystalline thin film, beam irradiator, beam irradiating method and beam reflecting device Sep. 29, 1998
5788767 Method for forming single sin layer as passivation film Aug. 4, 1998
5409867 Method of producing polycrystalline semiconductor thin film Apr. 25, 1995
5352330 Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption Oct. 4, 1994
5322589 Process and apparatus for recrystallization of semiconductor layer Jun. 21, 1994
5173446 Semiconductor substrate manufacturing by recrystallization using a cooling medium Dec. 22, 1992
4942058 Process for forming deposited film Jul. 17, 1990
4915772 Capping layer for recrystallization process Apr. 10, 1990
4870031 Method of manufacturing a semiconductor device Sep. 26, 1989
4847216 Process for the deposition by epitaxy of a doped material Jul. 11, 1989
4837182 Method of producing sheets of crystalline material Jun. 6, 1989
4800173 Process for preparing Si or Ge epitaxial film using fluorine oxidant Jan. 24, 1989
4757030 Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth Jul. 12, 1988
4740263 Process for preparing thin film and p-type diamond semiconductor Apr. 26, 1988
4727047 Method of producing sheets of crystalline material Feb. 23, 1988
4687537 Epitaxial metal silicide layers Aug. 18, 1987
4655850 Method of forming monocrystalline thin films by parallel beam scanning of belt shaped refractory metal film on amorphous or polycrystalline layer Apr. 7, 1987
4602980 Method for improving crystallinity of semiconductor ribbon Jul. 29, 1986
4599133 Method of producing single-crystal silicon film Jul. 8, 1986
4592799 Method of recrystallizing a polycrystalline, amorphous or small grain material Jun. 3, 1986
4585512 Method for making seed crystals for single-crystal semiconductor devices Apr. 29, 1986
4569700 Method of manufacturing a stacked semiconductor device Feb. 11, 1986
4564403 Single-crystal semiconductor devices and method for making them Jan. 14, 1986
4559102 Method for recrystallizing a polycrystalline, amorphous or small grain material Dec. 17, 1985
4555301 Formation of heterostructures by pulsed melting of precursor material Nov. 26, 1985
4554045 Method for producing metal silicide-silicon heterostructures Nov. 19, 1985
4547256 Method for thermally treating a semiconductor substrate Oct. 15, 1985
4510015 Method for semiconductor ribbon-to-ribbon conversion Apr. 9, 1985
4498951 Method of manufacturing single-crystal film Feb. 12, 1985
4497683 Process for producing dielectrically isolated silicon devices Feb. 5, 1985
4446373 Process and apparatus for converged fine line electron beam treatment objects May. 1, 1984
4427638 Apparatus for semiconductor ribbon-to-ribbon conversion Jan. 24, 1984
4411728 Method for manufacture of interdigital periodic structure device Oct. 25, 1983
4406709 Method of increasing the grain size of polycrystalline materials by directed energy-beams Sep. 27, 1983
4394183 Solidification of molten materials Jul. 19, 1983
4394210 Process for forming a lead film Jul. 19, 1983
4383883 Method for fabricating semiconductor device May. 17, 1983
4382186 Process and apparatus for converged fine line electron beam treatment of objects May. 3, 1983

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