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Class Information
Number: 117/90
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) > With pretreatment of substrate (e.g., coacting ablating)
Description: Subject matter in which a substrate* is treated prior to growth.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7625447 |
Method of growing semiconductor crystal |
Dec. 1, 2009 |
| 7615116 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
Nov. 10, 2009 |
| 7601215 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films |
Oct. 13, 2009 |
| 7597757 |
ZnO film with C-axis orientation |
Oct. 6, 2009 |
| 7594967 |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
Sep. 29, 2009 |
| 7582161 |
Atomic layer deposited titanium-doped indium oxide films |
Sep. 1, 2009 |
| 7566364 |
Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same |
Jul. 28, 2009 |
| 7553369 |
Method of altering the properties of a thin film and substrate implementing said method |
Jun. 30, 2009 |
| 7553371 |
Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
Jun. 30, 2009 |
| 7553372 |
Method of growing semiconductor crystal |
Jun. 30, 2009 |
| 7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Jun. 30, 2009 |
| 7547360 |
Reduction of carbon inclusions in sublimation grown SiC single crystals |
Jun. 16, 2009 |
| 7481880 |
Mask and method for crystallizing amorphous silicon |
Jan. 27, 2009 |
| 7479188 |
Process for producing GaN substrate |
Jan. 20, 2009 |
| 7473315 |
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate and method of producing Al.sub.xIn.sub.yGa.sub.1-x-yN mixture |
Jan. 6, 2009 |
| 7468103 |
Method of manufacturing gallium nitride-based single crystal substrate |
Dec. 23, 2008 |
| 7459025 |
Methods for transferring a layer onto a substrate |
Dec. 2, 2008 |
| 7459026 |
Light irradiation apparatus, crystallization apparatus, crystallization method and device |
Dec. 2, 2008 |
| 7455730 |
Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
Nov. 25, 2008 |
| 7438790 |
Electrode for electrolysis and process for producing the same |
Oct. 21, 2008 |
| 7425237 |
Method for depositing a material on a substrate wafer |
Sep. 16, 2008 |
| 7402206 |
Method of synthesizing a compound of the formula M.sub.n+1AX.sub.n, film of the compound and its use |
Jul. 22, 2008 |
| 7399356 |
Method for preparation of ferroelectric single crystal film structure using deposition method |
Jul. 15, 2008 |
| 7396409 |
Acicular silicon crystal and process for producing the same |
Jul. 8, 2008 |
| 7387678 |
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
Jun. 17, 2008 |
| 7384479 |
Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength |
Jun. 10, 2008 |
| 7377976 |
Method for growing thin oxide films |
May. 27, 2008 |
| 7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
May. 27, 2008 |
| 7357837 |
GaN single crystal substrate and method of making the same |
Apr. 15, 2008 |
| 7351285 |
Method and system for forming a variable thickness seed layer |
Apr. 1, 2008 |
| 7323400 |
Plasma processing, deposition and ALD methods |
Jan. 29, 2008 |
| 7294200 |
Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device |
Nov. 13, 2007 |
| 7294201 |
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and me |
Nov. 13, 2007 |
| 7273525 |
Methods for forming phosphorus- and/or boron-containing silica layers on substrates |
Sep. 25, 2007 |
| 7273664 |
Preparation method of a coating of gallium nitride |
Sep. 25, 2007 |
| 7270708 |
Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer |
Sep. 18, 2007 |
| 7261776 |
Deposition of buffer layers on textured metal surfaces |
Aug. 28, 2007 |
| 7229498 |
Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys |
Jun. 12, 2007 |
| 7161148 |
Tip structures, devices on their basis, and methods for their preparation |
Jan. 9, 2007 |
| 7128785 |
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates |
Oct. 31, 2006 |
| 7128786 |
Process for depositing III-V semiconductor layers on a non-III-V substrate |
Oct. 31, 2006 |
| 7108748 |
Low temperature load and bake |
Sep. 19, 2006 |
| 7108746 |
Silicon fixture with roughened surface supporting wafers in chemical vapor deposition |
Sep. 19, 2006 |
| 7094288 |
Method for producing a positively doped semiconductor with large forbidden band |
Aug. 22, 2006 |
| 7087114 |
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
Aug. 8, 2006 |
| 7081420 |
Method for preparing SiC crystal and SiC crystal |
Jul. 25, 2006 |
| 7070651 |
Process for growing a carbon film |
Jul. 4, 2006 |
| 7033434 |
Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same |
Apr. 25, 2006 |
| 7033436 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Apr. 25, 2006 |
| 7033437 |
Method for making semiconductor device including band-engineered superlattice |
Apr. 25, 2006 |
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