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Class Information
Number: 117/89
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) > Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
Description: Subject matter in which a growth-influencing parameter, such as temperature, precursor* composition, precursor* concentration, or precursor* flow rate, is varied (e.g., modulated) during growth and as a result growth is altered, usually so that distinct layers of single-crystals* are formed or so that a single-crystal* of varying internal composition is formed (e.g., superlattice).
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 117/92 |
Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, pecvd, cbe, mombe, rf induction, laser) |
213 |
| 117/91 |
With a chemical reaction (except ionization) in a disparate zone to form a precursor |
81 |
| 117/90 |
With pretreatment of substrate (e.g., coacting ablating) |
253 |
| 117/93 |
With significant flow manipulation or condition, other than merely specifying the components or their sequence or both |
224 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618492 |
Methods of forming nanocrystals |
Nov. 17, 2009 |
| 7608147 |
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
Oct. 27, 2009 |
| 7608539 |
ALD method and apparatus |
Oct. 27, 2009 |
| 7604697 |
Heteroepitaxial growth method for gallium nitride |
Oct. 20, 2009 |
| 7601217 |
Method of fabricating an epitaxially grown layer |
Oct. 13, 2009 |
| 7601215 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films |
Oct. 13, 2009 |
| 7594966 |
Method for producing a single crystal |
Sep. 29, 2009 |
| 7576372 |
Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
Aug. 18, 2009 |
| 7572333 |
Method for manufacturing semiconductor device |
Aug. 11, 2009 |
| 7563321 |
Process for producing high quality large size silicon carbide crystals |
Jul. 21, 2009 |
| 7553468 |
Method for producing solid product |
Jun. 30, 2009 |
| 7553372 |
Method of growing semiconductor crystal |
Jun. 30, 2009 |
| 7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Jun. 30, 2009 |
| 7553369 |
Method of altering the properties of a thin film and substrate implementing said method |
Jun. 30, 2009 |
| 7547359 |
Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
Jun. 16, 2009 |
| 7547360 |
Reduction of carbon inclusions in sublimation grown SiC single crystals |
Jun. 16, 2009 |
| 7540920 |
Silicon-containing layer deposition with silicon compounds |
Jun. 2, 2009 |
| 7537659 |
Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained |
May. 26, 2009 |
| 7534296 |
Electrically conductive diamond electrodes |
May. 19, 2009 |
| 7534310 |
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
May. 19, 2009 |
| 7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth |
Apr. 28, 2009 |
| 7517406 |
Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same |
Apr. 14, 2009 |
| 7514342 |
Method and apparatus for forming deposited film |
Apr. 7, 2009 |
| 7494545 |
Epitaxial deposition process and apparatus |
Feb. 24, 2009 |
| 7494546 |
Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices |
Feb. 24, 2009 |
| 7491269 |
Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier |
Feb. 17, 2009 |
| 7488386 |
Atomic layer deposition methods and chemical vapor deposition methods |
Feb. 10, 2009 |
| 7481880 |
Mask and method for crystallizing amorphous silicon |
Jan. 27, 2009 |
| 7479187 |
Method for manufacturing silicon epitaxial wafer |
Jan. 20, 2009 |
| 7479443 |
Germanium deposition |
Jan. 20, 2009 |
| 7473316 |
Method of growing nitrogenous semiconductor crystal materials |
Jan. 6, 2009 |
| 7465353 |
Method for growing epitaxial crystal |
Dec. 16, 2008 |
| 7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
Dec. 16, 2008 |
| 7462239 |
Low temperature load and bake |
Dec. 9, 2008 |
| 7459024 |
Method of forming an N-type doped single crystal diamond |
Dec. 2, 2008 |
| 7455730 |
Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
Nov. 25, 2008 |
| 7442252 |
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element |
Oct. 28, 2008 |
| 7442253 |
Process for forming low defect density, ideal oxygen precipitating silicon |
Oct. 28, 2008 |
| 7438762 |
Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate |
Oct. 21, 2008 |
| 7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
Oct. 21, 2008 |
| 7435297 |
Molten-salt-based growth of group III nitrides |
Oct. 14, 2008 |
| 7431767 |
Apparatus and method for growth of a thin film |
Oct. 7, 2008 |
| 7427326 |
Minimizing degradation of SiC bipolar semiconductor devices |
Sep. 23, 2008 |
| 7416605 |
Anneal of epitaxial layer in a semiconductor device |
Aug. 26, 2008 |
| 7416604 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
Aug. 26, 2008 |
| 7416606 |
Method of forming a layer of silicon carbide on a silicon wafer |
Aug. 26, 2008 |
| 7413608 |
Crystallization apparatus, crystallization method, and phase shifter |
Aug. 19, 2008 |
| 7404858 |
Method for epitaxial growth of silicon carbide |
Jul. 29, 2008 |
| 7393412 |
Method for manufacturing compound semiconductor epitaxial substrate |
Jul. 1, 2008 |
| 7387678 |
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
Jun. 17, 2008 |
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