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Class Information
Number: 117/88
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd)
Description: Subject matter in which a precursor* molecule composed of different atoms, other than an impurity or a dopant* precursor*, is involved in a decomposition chemical reaction* during the growth process.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 117/101 |
Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, miller index) |
256 |
| 117/89 |
Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) |
585 |
| 117/103 |
Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, pecvd, cbe, mombe, rf induction, laser) |
257 |
| 117/104 |
Using an organic precursor (e.g., propane, metal-organic, mocvd, movpe) |
365 |
| 117/99 |
With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes) |
141 |
| 117/98 |
With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation) |
77 |
| 117/94 |
With pretreatment or preparation of a base (e.g., annealing) |
283 |
| 117/102 |
With significant flow manipulation or condition, other than merely specifying the components or their sequence or both |
285 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615203 |
Single crystal diamond |
Nov. 10, 2009 |
| 7608147 |
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
Oct. 27, 2009 |
| 7608539 |
ALD method and apparatus |
Oct. 27, 2009 |
| 7605083 |
Formation of composite tungsten films |
Oct. 20, 2009 |
| 7594967 |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
Sep. 29, 2009 |
| 7579263 |
Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO.sub.2 layer |
Aug. 25, 2009 |
| 7563321 |
Process for producing high quality large size silicon carbide crystals |
Jul. 21, 2009 |
| 7556688 |
Method for achieving low defect density AlGaN single crystal boules |
Jul. 7, 2009 |
| 7553369 |
Method of altering the properties of a thin film and substrate implementing said method |
Jun. 30, 2009 |
| 7553468 |
Method for producing solid product |
Jun. 30, 2009 |
| 7553373 |
Silicon carbide single crystal and production thereof |
Jun. 30, 2009 |
| 7553372 |
Method of growing semiconductor crystal |
Jun. 30, 2009 |
| 7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Jun. 30, 2009 |
| 7547360 |
Reduction of carbon inclusions in sublimation grown SiC single crystals |
Jun. 16, 2009 |
| 7544249 |
Large-diameter SiC wafer and manufacturing method thereof |
Jun. 9, 2009 |
| 7520930 |
Silicon carbide single crystal and a method for its production |
Apr. 21, 2009 |
| RE40647 |
Method of producing plasma display panel with protective layer of an alkaline earth oxide |
Mar. 10, 2009 |
| 7501023 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
Mar. 10, 2009 |
| 7501022 |
Methods of fabricating silicon carbide crystals |
Mar. 10, 2009 |
| 7494546 |
Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices |
Feb. 24, 2009 |
| 7488385 |
Method for epitaxial growth of a gallium nitride film separated from its substrate |
Feb. 10, 2009 |
| 7488386 |
Atomic layer deposition methods and chemical vapor deposition methods |
Feb. 10, 2009 |
| 7482037 |
Methods for forming niobium and/or vanadium containing layers using atomic layer deposition |
Jan. 27, 2009 |
| 7481881 |
Method of manufacturing GaN crystal substrate |
Jan. 27, 2009 |
| 7481879 |
Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
Jan. 27, 2009 |
| 7476420 |
Process for producing metal oxide films at low temperatures |
Jan. 13, 2009 |
| 7468103 |
Method of manufacturing gallium nitride-based single crystal substrate |
Dec. 23, 2008 |
| 7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
Dec. 16, 2008 |
| 7465354 |
Patterned ferroelectric thin films for microwave devices |
Dec. 16, 2008 |
| 7465353 |
Method for growing epitaxial crystal |
Dec. 16, 2008 |
| 7459025 |
Methods for transferring a layer onto a substrate |
Dec. 2, 2008 |
| 7445672 |
Method of forming group-III nitride crystal, layered structure and epitaxial substrate |
Nov. 4, 2008 |
| 7442252 |
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element |
Oct. 28, 2008 |
| 7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
Oct. 21, 2008 |
| 7438761 |
Apparatus for fabricating a III-V nitride film and a method for fabricating the same |
Oct. 21, 2008 |
| 7402206 |
Method of synthesizing a compound of the formula M.sub.n+1AX.sub.n, film of the compound and its use |
Jul. 22, 2008 |
| 7399357 |
Atomic layer deposition using multilayers |
Jul. 15, 2008 |
| 7396409 |
Acicular silicon crystal and process for producing the same |
Jul. 8, 2008 |
| 7393410 |
Method of manufacturing nano-wire |
Jul. 1, 2008 |
| 7384867 |
Formation of composite tungsten films |
Jun. 10, 2008 |
| 7377977 |
High-purity crystal growth |
May. 27, 2008 |
| 7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
May. 27, 2008 |
| 7374617 |
Atomic layer deposition methods and chemical vapor deposition methods |
May. 20, 2008 |
| 7371281 |
Silicon carbide single crystal and method and apparatus for producing the same |
May. 13, 2008 |
| 7361220 |
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
Apr. 22, 2008 |
| 7357837 |
GaN single crystal substrate and method of making the same |
Apr. 15, 2008 |
| 7357838 |
Relaxed silicon germanium substrate with low defect density |
Apr. 15, 2008 |
| 7351285 |
Method and system for forming a variable thickness seed layer |
Apr. 1, 2008 |
| 7341628 |
Method to reduce crystal defects particularly in group III-nitride layers and substrates |
Mar. 11, 2008 |
| 7338582 |
Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure |
Mar. 4, 2008 |
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