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Class Information
Number: 117/86
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With a step of measuring, testing, or sensing > With responsive control
Description: Subject matter further including a step of controlling a specified parameter or condition in response to the measured, tested, or sensed condition or parameter.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor Mar. 4, 2014
8663735 In situ generation of RuO4 for ALD of Ru and Ru related materials Mar. 4, 2014
8658118 High purity crystalline silicon, high purity silicon tetrachloride for processes for producing the same Feb. 25, 2014
8617310 Method and system for perceiving a boundary between a first region and a second region of a superabrasive volume Dec. 31, 2013
8608848 Shaped nanocrystal particles and methods for making the same Dec. 17, 2013
8603243 Tracking carbon to silicon ratio in situ during silicon carbide growth Dec. 10, 2013
8591651 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby Nov. 26, 2013
8586488 Configuring radiation sources to simultaneously irradiate a substrate Nov. 19, 2013
8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime Nov. 5, 2013
8568529 HVPE chamber hardware Oct. 29, 2013
8562738 Nitride-based light-emitting device Oct. 22, 2013
8551246 Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer Oct. 8, 2013
8546167 Gallium nitride-based compound semiconductor light-emitting element Oct. 1, 2013
8512471 Halosilane assisted PVT growth of SiC Aug. 20, 2013
8506707 Substrate surface modifications for compositional gradation of crystalline materials and associated products Aug. 13, 2013
8465587 Modern hydride vapor-phase epitaxy system and methods Jun. 18, 2013
8465588 Ammonothermal method for growth of bulk gallium nitride Jun. 18, 2013
8430959 Apparatus and methods for preparation of high-purity silicon rods using mixed core means Apr. 30, 2013
8419853 Stacked semiconductor device and related method Apr. 16, 2013
8404045 Method for manufacturing group III nitride single crystals Mar. 26, 2013
8394197 Corrosion-resistant internal coating method using a germanium-containing precursor and hollow cathode techniques Mar. 12, 2013
8377205 Apparatus for producing silicon nanocrystals using inductively coupled plasma Feb. 19, 2013
8372199 Bulk GaN and AlGaN single crystals Feb. 12, 2013
8372196 Susceptor device, manufacturing apparatus of epitaxial wafer, and manufacturing method of epitaxial wafer Feb. 12, 2013
8372197 Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system Feb. 12, 2013
8361226 III-nitride single-crystal growth method Jan. 29, 2013
8328933 Apparatus and semiconductor co-crystal Dec. 11, 2012
8221546 Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby Jul. 17, 2012
8221549 Silicon carbide single crystal wafer and producing method thereof Jul. 17, 2012
8216364 System and method for low-power nanotube growth using direct resistive heating Jul. 10, 2012
8187379 Method of producing high quality relaxed silicon germanium layers May. 29, 2012
8177911 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semico May. 15, 2012
8163085 Method and apparatus for forming protective layer Apr. 24, 2012
8163573 Method for manufacturing nitride semiconductor element Apr. 24, 2012
8133815 Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial Mar. 13, 2012
8062421 Shaped nanocrystal particles and methods for making the same Nov. 22, 2011
8058640 Branched nanoscale wires Nov. 15, 2011
8052794 Directed reagents to improve material uniformity Nov. 8, 2011
8048225 Large-area bulk gallium nitride wafer and method of manufacture Nov. 1, 2011
8038793 Epitaxial growth method Oct. 18, 2011
8025728 Method for manufacturing single crystal of nitride Sep. 27, 2011
7976630 Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture Jul. 12, 2011
7955434 Diamond single crystal substrate Jun. 7, 2011
7955435 Method of producing high quality relaxed silicon germanium layers Jun. 7, 2011
7922814 Production process for high purity polycrystal silicon and production apparatus for the same Apr. 12, 2011
7887632 Process for producing monocrystal thin film and monocrystal thin film device Feb. 15, 2011
7883645 Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements Feb. 8, 2011
7833346 Method and apparatus for manufacturing group III nitride crystals Nov. 16, 2010
7794543 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Sep. 14, 2010
7790636 Simultaneous irradiation of a substrate by multiple radiation sources Sep. 7, 2010

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