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Class Information
Number: 117/85
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation) > With a step of measuring, testing, or sensing
Description: Subject matter which includes the measuring, testing, or sensing of a process condition or parameter during the process.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7621998 |
Single crystalline gallium nitride thick film having reduced bending deformation |
Nov. 24, 2009 |
| 7591897 |
Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures |
Sep. 22, 2009 |
| 7563321 |
Process for producing high quality large size silicon carbide crystals |
Jul. 21, 2009 |
| 7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth |
Apr. 28, 2009 |
| 7473315 |
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate and method of producing Al.sub.xIn.sub.yGa.sub.1-x-yN mixture |
Jan. 6, 2009 |
| 7449064 |
Method for producing AlN single crystal and AlN single crystal |
Nov. 11, 2008 |
| 7445671 |
Formation of metal oxide nanowire networks (nanowebs) of low-melting metals |
Nov. 4, 2008 |
| 7442355 |
Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof |
Oct. 28, 2008 |
| 7402207 |
Method and apparatus for controlling the thickness of a selective epitaxial growth layer |
Jul. 22, 2008 |
| 7387678 |
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
Jun. 17, 2008 |
| 7368014 |
Variable temperature deposition methods |
May. 6, 2008 |
| 7270707 |
Method for the preparation of diamond, graphite or their mixture |
Sep. 18, 2007 |
| 7232555 |
AIGaInN single-crystal wafer |
Jun. 19, 2007 |
| 7211144 |
Pulsed nucleation deposition of tungsten layers |
May. 1, 2007 |
| 7175708 |
Recovering purified water and potassium chloride from spent basic hydrogen peroxide |
Feb. 13, 2007 |
| 7153361 |
Production method of opto-electronic device array |
Dec. 26, 2006 |
| 7135071 |
Fractal structure and method of forming it |
Nov. 14, 2006 |
| 7135073 |
Method and system for semiconductor crystal production with temperature management |
Nov. 14, 2006 |
| 7101434 |
Fractal structure and its forming method |
Sep. 5, 2006 |
| 7087114 |
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
Aug. 8, 2006 |
| 7074270 |
Method for predicting the behavior of dopant and defect components |
Jul. 11, 2006 |
| 7056381 |
Fabrication method of semiconductor device |
Jun. 6, 2006 |
| 7026009 |
Evaluation of chamber components having textured coatings |
Apr. 11, 2006 |
| 7018467 |
Three-dimensional complete bandgap photonic crystal formed by crystal modification |
Mar. 28, 2006 |
| 7001459 |
Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy |
Feb. 21, 2006 |
| 6994750 |
Film evaluating method, temperature measuring method, and semiconductor device manufacturing method |
Feb. 7, 2006 |
| 6929695 |
Method for preparing single crystal oxide thin film |
Aug. 16, 2005 |
| 6923859 |
Apparatus for manufacturing GaN substrate and manufacturing method thereof |
Aug. 2, 2005 |
| 6881259 |
In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films |
Apr. 19, 2005 |
| 6860138 |
Real-time detection mechanism with self-calibrated steps for the hardware baseline to detect the malfunction of liquid vaporization system in AMAT TEOS-based Dxz chamber |
Mar. 1, 2005 |
| 6836532 |
Diffraction system for biological crystal screening |
Dec. 28, 2004 |
| 6726767 |
Layer processing |
Apr. 27, 2004 |
| 6716284 |
Apparatus and process of improving atomic layer deposition chamber performance |
Apr. 6, 2004 |
| 6685772 |
De novo processing of electronic materials |
Feb. 3, 2004 |
| 6679946 |
Method and apparatus for controlling substrate temperature and layer thickness during film formation |
Jan. 20, 2004 |
| 6521042 |
Semiconductor growth method |
Feb. 18, 2003 |
| 6447605 |
Method for preparing heteroepitaxial thin film |
Sep. 10, 2002 |
| 6417013 |
Morphed processing of semiconductor devices |
Jul. 9, 2002 |
| 6409828 |
Method and apparatus for achieving a desired thickness profile in a flow-flange reactor |
Jun. 25, 2002 |
| 6372041 |
Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis |
Apr. 16, 2002 |
| 6358313 |
Method of manufacturing a crystalline silicon base semiconductor thin film |
Mar. 19, 2002 |
| 6306668 |
Control method and system for use when growing thin-films on semiconductor-based materials |
Oct. 23, 2001 |
| 6235543 |
Method of evaluating a semiconductor wafer |
May. 22, 2001 |
| 6217651 |
Method for correction of thin film growth temperature |
Apr. 17, 2001 |
| 6126744 |
Method and system for adjusting semiconductor processing equipment |
Oct. 3, 2000 |
| 6123766 |
Method and apparatus for achieving temperature uniformity of a substrate |
Sep. 26, 2000 |
| 6121051 |
Fractional phase measurement by polarization-dependent spectroscopy |
Sep. 19, 2000 |
| 6113690 |
Method of preparing crystalline alkaline earth metal oxides on a Si substrate |
Sep. 5, 2000 |
| 6087242 |
Method to improve commercial bonded SOI material |
Jul. 11, 2000 |
| 6074485 |
Crystal growth observing apparatus using a scanning tunneling microscope |
Jun. 13, 2000 |
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