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Class Information
Number: 117/84
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation)
Description: Subject matter in which the single-crystal* is grown by depositing material directly from the vapor or gaseous state; i.e., the immediate-precursor* is in a vapor or gaseous state.

Sub-classes under this class:

Class Number Class Name Patents
117/87 Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) 108
117/109 Fully-sealed or vacuum-maintained chamber (e.g., ampoule) 139
117/105 Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) 466
117/108 Using an energy beam or field, a particle beam or field, or a plasma (e.g., mbe) 400
117/85 With a step of measuring, testing, or sensing 146
117/88 With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) 460
117/107 With movement of substrate or vapor or gas supply means during growth 84
117/106 With pretreatment or preparation of a base (e.g., annealing) 280

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
8709371 Method for growing group III-nitride crystals in supercritical ammonia using an autoclave Apr. 29, 2014
8704239 Production method of a layered body Apr. 22, 2014
8691012 Method of manufacturing zinc oxide nanowires Apr. 8, 2014
8685165 Metal oxide films Apr. 1, 2014
8673074 Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) Mar. 18, 2014
8673254 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same Mar. 18, 2014
8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor Mar. 4, 2014
8652255 Method of producing epitaxial layers with low basal plane dislocation concentrations Feb. 18, 2014
8652256 Manufacturing apparatus of polycrystalline silicon Feb. 18, 2014
8647915 Hetero-junction photovoltaic device and method of fabricating the device Feb. 11, 2014
8641821 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal Feb. 4, 2014
8642449 Silicon wafer Feb. 4, 2014
8636845 Metal heterocyclic compounds for deposition of thin films Jan. 28, 2014
8636844 Oxygen engineered single-crystal REO template Jan. 28, 2014
8636843 Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof Jan. 28, 2014
8632853 Use of nitrogen-containing ligands in atomic layer deposition methods Jan. 21, 2014
8623139 Apparatus for producing polycrystalline silicon Jan. 7, 2014
8624266 Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device Jan. 7, 2014
8624267 Low 1C screw dislocation 3 inch silicon carbide wafer Jan. 7, 2014
8618552 Low micropipe 100 mm silicon carbide wafer Dec. 31, 2013
8617312 Systems and methods for forming layers that contain niobium and/or tantalum Dec. 31, 2013
8613802 Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal Dec. 24, 2013
8608849 Method for making zinc oxide nano-structrure Dec. 17, 2013
8603898 Method for forming group III/V conformal layers on silicon substrates Dec. 10, 2013
8591653 Compound semiconductor single-crystal manufacturing device and manufacturing method Nov. 26, 2013
8591652 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy Nov. 26, 2013
8591650 Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device Nov. 26, 2013
8591649 Methods for manufacturing geometric multi-crystalline cast materials Nov. 26, 2013
8585820 Abatement of reaction gases from gallium nitride deposition Nov. 19, 2013
8585822 Method for testing group III-nitride wafers and group III-nitride wafers with test data Nov. 19, 2013
8580034 Low-temperature dielectric formation for devices with strained germanium-containing channels Nov. 12, 2013
8580035 Large aluminum nitride crystals with reduced defects and methods of making them Nov. 12, 2013
8574529 Silicon carbide crystal and method of manufacturing silicon carbide crystal Nov. 5, 2013
8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime Nov. 5, 2013
8574364 GaN-crystal free-standing substrate and method for producing the same Nov. 5, 2013
8568530 Use of cyclopentadienyl type hafnium and zirconium precursors in atomic layer deposition Oct. 29, 2013
8562737 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device Oct. 22, 2013
8557628 Method for production of zinc oxide single crystals Oct. 15, 2013
8557339 Method for the deposition of a Ruthenium containing film Oct. 15, 2013
8557043 Method for testing group III-nitride wafers and group III-nitride wafers with test data Oct. 15, 2013
8557041 Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells Oct. 15, 2013
8551246 Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer Oct. 8, 2013
8540817 Method of manufacturing a Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v substrate, method of manufacturing an epitaxial wafer, Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v substrate, and epitaxial wafer Sep. 24, 2013
8530340 Epitaxial semiconductor deposition methods and structures Sep. 10, 2013
8529699 Method of growing zinc-oxide-based semiconductor and method of manufacturing semiconductor light emitting device Sep. 10, 2013
8529698 Ingan columnar nano-heterostructures for solar cells Sep. 10, 2013
8529697 Growth of nitride semiconductor crystals Sep. 10, 2013
8518179 Controlling the emissive properties of materials-improved lasers and upconversion materials Aug. 27, 2013
8518287 Dichalcogenide thermoelectric material Aug. 27, 2013
8501143 Single crystal diamond prepared by CVD Aug. 6, 2013

1 2 3 4 5 6 7 8 9 10 11 12 13

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