| |
 |
|
Class Information
Number: 117/84
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Forming from vapor or gaseous state (e.g., vpe, sublimation)
Description: Subject matter in which the single-crystal* is grown by depositing material directly from the vapor or gaseous state; i.e., the immediate-precursor* is in a vapor or gaseous state.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 117/87 |
Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) |
73 |
| 117/109 |
Fully-sealed or vacuum-maintained chamber (e.g., ampoule) |
105 |
| 117/105 |
Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) |
388 |
| 117/108 |
Using an energy beam or field, a particle beam or field, or a plasma (e.g., mbe) |
352 |
| 117/85 |
With a step of measuring, testing, or sensing |
110 |
| 117/88 |
With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) |
299 |
| 117/107 |
With movement of substrate or vapor or gas supply means during growth |
68 |
| 117/106 |
With pretreatment or preparation of a base (e.g., annealing) |
226 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7621998 |
Single crystalline gallium nitride thick film having reduced bending deformation |
Nov. 24, 2009 |
| 7621999 |
Method and apparatus for AlGan vapor phase growth |
Nov. 24, 2009 |
| 7615116 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
Nov. 10, 2009 |
| 7615203 |
Single crystal diamond |
Nov. 10, 2009 |
| 7611579 |
Systems and methods for synthesis of extended length nanostructures |
Nov. 3, 2009 |
| 7608539 |
ALD method and apparatus |
Oct. 27, 2009 |
| 7608147 |
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
Oct. 27, 2009 |
| 7605083 |
Formation of composite tungsten films |
Oct. 20, 2009 |
| 7597757 |
ZnO film with C-axis orientation |
Oct. 6, 2009 |
| 7594967 |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
Sep. 29, 2009 |
| 7591897 |
Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures |
Sep. 22, 2009 |
| 7572333 |
Method for manufacturing semiconductor device |
Aug. 11, 2009 |
| 7566364 |
Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same |
Jul. 28, 2009 |
| 7563321 |
Process for producing high quality large size silicon carbide crystals |
Jul. 21, 2009 |
| 7556688 |
Method for achieving low defect density AlGaN single crystal boules |
Jul. 7, 2009 |
| 7553373 |
Silicon carbide single crystal and production thereof |
Jun. 30, 2009 |
| 7553372 |
Method of growing semiconductor crystal |
Jun. 30, 2009 |
| 7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Jun. 30, 2009 |
| 7547360 |
Reduction of carbon inclusions in sublimation grown SiC single crystals |
Jun. 16, 2009 |
| 7544398 |
Controlled nano-doping of ultra thin films |
Jun. 9, 2009 |
| 7544249 |
Large-diameter SiC wafer and manufacturing method thereof |
Jun. 9, 2009 |
| 7534412 |
Large-volume CaF.sub.2 single crystals with reduced scattering and improved laser stability, and uses thereof |
May. 19, 2009 |
| 7527869 |
Single crystal silicon carbide and method for producing the same |
May. 5, 2009 |
| 7527983 |
Ferromagnetic material |
May. 5, 2009 |
| 7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth |
Apr. 28, 2009 |
| 7520930 |
Silicon carbide single crystal and a method for its production |
Apr. 21, 2009 |
| 7517775 |
Methods of selective deposition of heavily doped epitaxial SiGe |
Apr. 14, 2009 |
| 7507288 |
Highly anisotropic ceramic thermal barrier coating materials and related composites |
Mar. 24, 2009 |
| 7504323 |
GaN single crystal substrate and method of making the same |
Mar. 17, 2009 |
| 7501022 |
Methods of fabricating silicon carbide crystals |
Mar. 10, 2009 |
| 7501023 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
Mar. 10, 2009 |
| 7494545 |
Epitaxial deposition process and apparatus |
Feb. 24, 2009 |
| 7488385 |
Method for epitaxial growth of a gallium nitride film separated from its substrate |
Feb. 10, 2009 |
| 7488386 |
Atomic layer deposition methods and chemical vapor deposition methods |
Feb. 10, 2009 |
| 7481881 |
Method of manufacturing GaN crystal substrate |
Jan. 27, 2009 |
| 7482037 |
Methods for forming niobium and/or vanadium containing layers using atomic layer deposition |
Jan. 27, 2009 |
| 7476487 |
Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same |
Jan. 13, 2009 |
| 7473315 |
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate and method of producing Al.sub.xIn.sub.yGa.sub.1-x-yN mixture |
Jan. 6, 2009 |
| 7465353 |
Method for growing epitaxial crystal |
Dec. 16, 2008 |
| 7465354 |
Patterned ferroelectric thin films for microwave devices |
Dec. 16, 2008 |
| 7459024 |
Method of forming an N-type doped single crystal diamond |
Dec. 2, 2008 |
| 7455729 |
Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
Nov. 25, 2008 |
| 7455730 |
Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
Nov. 25, 2008 |
| 7449065 |
Method for the growth of large low-defect single crystals |
Nov. 11, 2008 |
| 7445672 |
Method of forming group-III nitride crystal, layered structure and epitaxial substrate |
Nov. 4, 2008 |
| 7445671 |
Formation of metal oxide nanowire networks (nanowebs) of low-melting metals |
Nov. 4, 2008 |
| 7442253 |
Process for forming low defect density, ideal oxygen precipitating silicon |
Oct. 28, 2008 |
| 7438761 |
Apparatus for fabricating a III-V nitride film and a method for fabricating the same |
Oct. 21, 2008 |
| 7435297 |
Molten-salt-based growth of group III nitrides |
Oct. 14, 2008 |
| 7419888 |
Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same |
Sep. 2, 2008 |
|
|
|
