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Class Information
Number: 117/83
Name: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor > Processes of growth from liquid or supercritical state > Havin growth from molten state (e.g., solution melt) > Growth confined by a solid member other than seed or product (e.g., bridgman-stockbarger method) > Having bottom-up crystallization (e.g., vfg, vgf)
Description: Subject matter in which crystal growth initiates at the lowest point in the melt and progresses up; e.g., vertical freeze gradient (VFG).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8663388 Method of manufacturing single crystal wire and other single crystal metallic articles Mar. 4, 2014
8657955 Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal Feb. 25, 2014
8647433 Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same Feb. 11, 2014
8628614 Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics Jan. 14, 2014
8591648 Crystal growing system having multiple rotatable crucibles and using a temperature gradient method Nov. 26, 2013
8591649 Methods for manufacturing geometric multi-crystalline cast materials Nov. 26, 2013
8562740 Apparatus for directional solidification of silicon including a refractory material Oct. 22, 2013
8535440 Method of promoting single crystal growth during melt growth of semiconductors Sep. 17, 2013
8512470 System and methods for growing high-resistance single crystals Aug. 20, 2013
8506706 Systems, methods and substrates of monocrystalline germanium crystal growth Aug. 13, 2013
8506707 Substrate surface modifications for compositional gradation of crystalline materials and associated products Aug. 13, 2013
8506705 Method for manufacturing nitride single crystal Aug. 13, 2013
8475593 Crystal preparing device, crystal preparing method, and crystal Jul. 2, 2013
8475592 Method for producing a single crystal of semiconductor material Jul. 2, 2013
8449672 Method of growing group III nitride crystals May. 28, 2013
8404043 Process for producing polycrystalline bulk semiconductor Mar. 26, 2013
8361225 Low etch pit density (EPD) semi-insulating III-V wafers Jan. 29, 2013
8329295 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient Dec. 11, 2012
8323406 Defect reduction in seeded aluminum nitride crystal growth Dec. 4, 2012
8317920 Directional solidification furnace for reducing melt contamination and reducing wafer contamination Nov. 27, 2012
8293010 Templated growth of porous or non-porous castings Oct. 23, 2012
8268074 Method and device for producing oriented solidified blocks made of semi-conductor material Sep. 18, 2012
8242420 Directional solidification of silicon by electric induction susceptor heating in a controlled environment Aug. 14, 2012
8231727 Crystal growth apparatus and method Jul. 31, 2012
8231729 Apparatus for producing nitride single crystal Jul. 31, 2012
8211228 Method for producing single crystal and a method for producing annealed wafer Jul. 3, 2012
8210906 Slicing method and method for manufacturing epitaxial wafer Jul. 3, 2012
8192544 Apparatus for manufacturing poly crystaline silicon ingot for solar battery having door open/close device using hinge Jun. 5, 2012
8157914 Substrate surface modifications for compositional gradation of crystalline materials and associated products Apr. 17, 2012
8123857 Method for producing p-type SiC semiconductor single crystal Feb. 28, 2012
8118933 Method of manufacturing a silicon carbide single crystal Feb. 21, 2012
8101020 Crystal growth apparatus and manufacturing method of group III nitride crystal Jan. 24, 2012
8052794 Directed reagents to improve material uniformity Nov. 8, 2011
8025728 Method for manufacturing single crystal of nitride Sep. 27, 2011
8021482 Method for eliminating the precipitates in a II-IV semiconductor material by annealing Sep. 20, 2011
7972439 Method of growing single crystals from melt Jul. 5, 2011
7955433 Method and system for forming a silicon ingot using a low-grade silicon feedstock Jun. 7, 2011
RE42279 Method of preparing a compound semiconductor crystal Apr. 12, 2011
7918936 System and method for crystal growing Apr. 5, 2011
7905958 Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device Mar. 15, 2011
7837969 Method of making large-volume CaF.sub.2 single crystals for optical elements with an optic axis parallel to the (100)-or (110)-crystal axis and CaF.sub.2 single crystal made thereby Nov. 23, 2010
7811380 Process for obtaining bulk mono-crystalline gallium-containing nitride Oct. 12, 2010
7799158 Method for producing crystallographically-oriented ceramic Sep. 21, 2010
7785416 Crucible and single crystal growth method using crucible Aug. 31, 2010
7785414 Process for manufacturing wafer of silicon carbide single crystal Aug. 31, 2010
7780784 Molding assembly for forming ingot and a method of forming ingot Aug. 24, 2010
RE41551 Method of preparing group III-V compound semiconductor crystal Aug. 24, 2010
7776153 Method and apparatus for producing large, single-crystals of aluminum nitride Aug. 17, 2010
7754011 Method of manufacturing a calcium fluoride single crystal Jul. 13, 2010
7745854 Substrate for growing compound semiconductor and epitaxial growth method Jun. 29, 2010

1 2 3 4 5

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